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    D2S2 DIODE Search Results

    D2S2 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    D2S2 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    compensator for cuk converter

    Abstract: CC0N3 isolated sepic converter D3S3 diode d2s2 diode CC0N2 dc1s sepic LM3478 LM3478 SEPIC
    Text: National Semiconductor Application Note 1990 L.K.Wong and T.K.Man January 19, 2010 Introduction time and the switching period TSW of the switch S1. Its nominal value is SEPIC converters have a number of advantages. They allow an input voltage higher or lower than the output voltage. The


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    PDF LM3478 AN-1990 compensator for cuk converter CC0N3 isolated sepic converter D3S3 diode d2s2 diode CC0N2 dc1s sepic LM3478 SEPIC

    si1869

    Abstract: Si1869DH SC70-6 D23XX
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V rDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 1.8 to 20 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 • TrenchFET Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch,


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    PDF Si1869DH SC70-6 08-Apr-05 si1869 D23XX

    si1869dh-t1-ge3

    Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


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    PDF Si1869DH SC70-6 6124lectual 18-Jul-08 si1869dh-t1-ge3 Si1869DH-T1-E3 si1869 620td

    Si1869DH

    Abstract: SC70-6
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V rDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 1.8 to 20 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 • TrenchFET Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch,


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    PDF Si1869DH SC70-6 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original
    PDF Si1869DH SC70-6 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


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    PDF Si1869DH SC70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BT8370KPF

    Abstract: BT8370 Bt8370EVM MC68302 user
    Text: Fully I n t e g r a t e d T l / E l F r a me r and Line I n t e r f a c e R O C K S00266 N8370DSE July 1 ,1 9 9 9 C O N E X A N T What's next in communications technologies C O M C X A N T B t8 3 7 0 /8 3 7 5 /8 3 7 6 Fully Integrated T l/E l Framer and Line Interface


    OCR Scan
    PDF S00266 N8370DSE Bt8370/8375/8376 Bt8370 Bt8375 Bt8376 BT8370KPF Bt8370EVM MC68302 user