Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5766A SVD101 Hyperabrupt Junction Type GaAs Varactor Diode SVD101 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD101] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5766A
SVD101
SVD101]
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5770A SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD302] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5770A
SVD302
SVD302]
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5500B SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD301] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5500B
SVD301
SVD301]
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TA-3713
Abstract: D2502 SVD301 GaAs varactor diode D2502 diode
Text: Ordering number : ENN5500C SVD301 SANYO Semiconductors DATA SHEET SVD301 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5
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ENN5500C
SVD301
1274B
SVD301]
TA-3713
D2502
SVD301
GaAs varactor diode
D2502 diode
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D2502
Abstract: SVD201 D2502 diode
Text: Ordering number : ENN5768B SVD201 Hyperabrupt Junction Type GaAs Varactor Diode SVD201 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD201] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5768B
SVD201
1274B
SVD201]
D2502
SVD201
D2502 diode
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D2502
Abstract: SVD102
Text: Ordering number : ENN5767B SVD102 Hyperabrupt Junction Type GaAs Varactor Diode SVD102 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD102] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5767B
SVD102
1274B
SVD102]
D2502
SVD102
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D2502
Abstract: ECSP1006-2 ESGD100
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
D2502
ECSP1006-2
ESGD100
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5769A SVD202 Hyperabrupt Junction Type GaAs Varactor Diode SVD202 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD202] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5769A
SVD202
SVD202]
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
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D2502
Abstract: SVD101
Text: SVD101 Ordering number : ENN5766C SANYO Semiconductors DATA SHEET SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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SVD101
ENN5766C
D2502
SVD101
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5768A SVD201 Hyperabrupt Junction Type GaAs Varactor Diode SVD201 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD201] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5768A
SVD201
SVD201]
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D2502
Abstract: SVD301 GaAs varactor diode SANYO DIODE
Text: Ordering number : ENN5500C SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5500C
SVD301
1274B
SVD301]
D2502
SVD301
GaAs varactor diode
SANYO DIODE
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GaAs varactor diode
Abstract: D2502 SVD101
Text: Ordering number : ENN5766C SVD101 SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage
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ENN5766C
SVD101
GaAs varactor diode
D2502
SVD101
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D2502
Abstract: SVD101
Text: Ordering number : ENN5766B SVD101 Hyperabrupt Junction Type GaAs Varactor Diode SVD101 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD101] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5766B
SVD101
1274B
SVD101]
D2502
SVD101
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN5767A SVD102 Hyperabrupt Junction Type GaAs Varactor Diode SVD102 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD102] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1
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ENN5767A
SVD102
SVD102]
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D2502
Abstract: SVD302 sanyo TA-3713 ta3713
Text: Ordering number : ENN5770B SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD302] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode
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ENN5770B
SVD302
1274B
SVD302]
D2502
SVD302
sanyo
TA-3713
ta3713
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320 ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features • • Package Dimensions Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321 [ESGD100]
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ENN7320
ESGD100
ESGD100]
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w503
Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
Text: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low
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ENN7312
FW503
FW503
MCH3306
SBS004
FW503]
w503
D2502
Schottky Barrier 3A
ENN7312
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2SC5831
Abstract: D2502 ITR06005 ITR06006 ITR06007 ITR06008 ITR06009
Text: Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor 2SC5831 Driver Applications Preliminary Package Dimensions Suitable for use in switching of inductive load motor drivers, printer hammer drivers, relay drivers . unit : mm 2042B •
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ENN7261
2SC5831
2042B
2SC5831]
2SC5831
D2502
ITR06005
ITR06006
ITR06007
ITR06008
ITR06009
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Q8031
Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED
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ITP700FLEX
LIP-SM-M42
Q8031
ISL9504 U7500
SLG8LP436
ISL9504
macbook
"board view" macbook
820-1889
c5966
U6200
PP3V42G3H
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ISL9504
Abstract: "board view" macbook macbook C4130 k20 apple PP3V42G3H PP3V42 U6200 58A-6 p66 apple
Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED
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ITP700FLEX
ISL9504
"board view" macbook
macbook
C4130
k20 apple
PP3V42G3H
PP3V42
U6200
58A-6
p66 apple
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l9122
Abstract: IT8510 ATI RC415ME CON3602 ATI SB600 RC415ME ics951463 X51RL L1208 asus
Text: 5 4 3 2 1 <60 7IVMIV &PSGO MEKVEQ FAN + SENSOR MAX6657MSA PAGE 4 CLOCK GEN ICS951463 CPU Merom-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz PAGE 40 DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT OUT PAGE 41 DDR2-533 Dual Channel DDR2
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MAX6657MSA
ICS951463
533MHz
RC415M
415MD:
02G110013320
415ME:
02G110013300
DDR2-533
IT8510/8511
l9122
IT8510
ATI RC415ME
CON3602
ATI SB600
RC415ME
ics951463
X51RL
L1208
asus
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L9122
Abstract: CON3602 12G04600479A ics951463 ATI SB600 IT8510 asus RC415ME c3506 ATI RC415ME
Text: 5 4 3 2 1 86 7IVMIV &PSGO MEKVEQ FAN + SENSOR MAX6657MSA PAGE 4 CLOCK GEN ICS951463 CPU YONAH-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT OUT PAGE 13 PAGE 41 DDR2-533 Dual Channel DDR2
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MAX6657MSA
ICS951463
533MHz
RC415M
415MD:
02G110013320
415ME:
02G110013300
DDR2-533
IT8510/8511
L9122
CON3602
12G04600479A
ics951463
ATI SB600
IT8510
asus
RC415ME
c3506
ATI RC415ME
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ar9350
Abstract: PP3V42 p51 apple PP3V42G3H FERR-220-OHM apple lcd pinout B20 SC70-6 p66 apple LPC Debug Connector APPLE LCD INVERTER
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06
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ITP700FLEX
ar9350
PP3V42
p51 apple
PP3V42G3H
FERR-220-OHM
apple lcd pinout
B20 SC70-6
p66 apple
LPC Debug Connector
APPLE LCD INVERTER
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