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    D2012 TRANSISTOR Search Results

    D2012 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D2012 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012

    D2012

    Abstract: No abstract text available
    Text: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 D2012

    transistor d2012

    Abstract: D2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 transistor d2012 D2012

    transistor d2012

    Abstract: transistor d2012 specification d2012 transistor D2012 BTD2012FP
    Text: CYStech Electronics Corp. Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTD2012FP Features • Low collector-to-emitter saturation voltage, typically VCE SAT =0.25V at IC / IB=2A / 0.2A


    Original     		PDF C822FP BTD2012FP O-220FP UL94V-0 transistor d2012 transistor d2012 specification d2012 transistor D2012 BTD2012FP

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012

    D2012 toshiba

    Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012

    transistor d2012

    Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012

    transistor d2012

    Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba

    J1-0603

    Abstract: SSD2119 LM LED driver SD card socket, footprint to PCB transistor d2012 HDR 2x5 GCM155R71C104KA HDR1X4 microSD card adapter circuit diagram 60pin LCD RGB
    Text: Stellaris Intelligent Display Module with 3.5" Landscape Display Reference Design Kit User ’s Manual RDK-BDC-06 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.


    Original     		PDF RDK-BDC-06 J1-0603 SSD2119 LM LED driver SD card socket, footprint to PCB transistor d2012 HDR 2x5 GCM155R71C104KA HDR1X4 microSD card adapter circuit diagram 60pin LCD RGB

    transistor D2058

    Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
    Text: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do


    Original     		PDF C2000 transistor D2058 K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr