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    D2012 TOSHIBA Search Results

    D2012 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    D2012 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Text: D2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012

    D2012 toshiba

    Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
    Text: D2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012

    transistor d2012

    Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
    Text: D2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012

    transistor d2012

    Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
    Text: D2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba

    C3331

    Abstract: c3207 c3206 C3478 C3381 TP3407 c3355 r3301 C3128 c3309
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-2890 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-2890 ENX-31 SL3300 SL3301 SL3350 SL3430 SL3450 SL3451 SL3570 SL3600 C3331 c3207 c3206 C3478 C3381 TP3407 c3355 r3301 C3128 c3309

    c3207

    Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr