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    D2 MARKING CODE DPAK Search Results

    D2 MARKING CODE DPAK Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation

    D2 MARKING CODE DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Voltage 8 and 16 Amp

    Abstract: HVSSeries
    Text: Product Brief High Voltage 8 and 16 Amp Schottky Rectifier Series CSHD8 Series 8 Amp 60V, 100V and 200V in the DPAK package CSHDD16 Series (16 Amp) 40V thru 200V Dual Common Cathode in the D2PAK package Typical Electrical Characteristics Central Semiconductor’s CSHD8 series (8 Amp)


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    PDF CSHDD16 High Voltage 8 and 16 Amp HVSSeries

    CDBD620-G

    Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF CDBD620-G CDBD6100-G mQW-BB032 CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G

    Untitled

    Abstract: No abstract text available
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP Chip Schottky Barrier Rectifier SMD Diodes Specialist CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBD540-HF Thru. CDBD5200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Features TO-252/DPAK - Batch process design, excellent power dissipation offers better reverse leakage current and thermal


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    PDF CDBD540-HF CDBD5200-HF O-252/DPAK MIL-STD-19500 CDBD5040-HF SK540Y CDBD5045-HF SK545Y CDBD5060-HF SK560Y

    diode D07-15

    Abstract: D07 15
    Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output


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    PDF TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-y diode D07-15 D07 15

    TS317CP

    Abstract: 18BSC TS317 TS317CM TS317CW TS317CZ adjustable current limiter
    Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK SOT-223 TO-252 (DPAK) Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output


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    PDF TS317 O-220 O-263 OT-223 O-252 TS317 O-220, O-263, O-252 TS317CP 18BSC TS317CM TS317CW TS317CZ adjustable current limiter

    diode D07-15

    Abstract: D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317 TS317CM TS317CP
    Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output


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    PDF TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-263 diode D07-15 D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317CM TS317CP

    Untitled

    Abstract: No abstract text available
    Text: TS317I 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output


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    PDF TS317I O-220 O-263 O-252 OT-223 TS317 O-220, O-263, O-252

    voltage regulator sot 223

    Abstract: TS317CM TS317CW 3V Positive Voltage Regulator C07 MARKING CODE TS317CP diode marking code cz 3-terminal adjustable regulator marking code voltage regulators marking codes transistors sot-223
    Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output


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    PDF TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-263 voltage regulator sot 223 TS317CM TS317CW 3V Positive Voltage Regulator C07 MARKING CODE TS317CP diode marking code cz 3-terminal adjustable regulator marking code voltage regulators marking codes transistors sot-223

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


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    PDF NTD4806N, NVD4806N NTD4806N/D

    Untitled

    Abstract: No abstract text available
    Text: DP AK BT151S-650S SCR 20 June 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier SCR in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are


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    PDF BT151S-650S OT428

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


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    PDF NTD4809N, NVD4809N NTD4809N/D

    mosfet 58ng

    Abstract: 48 58ng
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


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    PDF NTD4858N NTD4858N/D mosfet 58ng 48 58ng

    208S8

    Abstract: No abstract text available
    Text: DP AK BTA208S-800F 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 DPAK surface mountable plastic package. This "series F" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low


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    PDF BTA208S-800F OT428 208S8

    MARKING code u1 sot 563

    Abstract: MT 1379 DEC sot-353 marking B2 marking ayWW SOT23
    Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 874 CASE OUTLINES AND PACKAGE DIMENSIONS SOT−23 CASE 1212−01 ISSUE O DATE 07/03/1996 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES


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    PDF OT-23 OT-89 MARKING code u1 sot 563 MT 1379 DEC sot-353 marking B2 marking ayWW SOT23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DXTP560BP5 ADV AN CE I N FORM AT I ON 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current


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    PDF DXTP560BP5 -500V -150mA OT223; AEC-Q101 DS35054

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DXTP560BP5 ADVANCE INFORMATION 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current


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    PDF DXTP560BP5 -500V -150mA OT223; AEC-Q101 J-STD-020 DS35054

    4806n

    Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


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    PDF NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad

    48 09ng

    Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
    Text: NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


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    PDF NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D

    09nhg

    Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


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    PDF NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


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    PDF NTD4809N, NVD4809N NTD4809N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


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    PDF NTD4804N, NVD4804N NTD4804N/D

    1N4D02

    Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
    Text: s TAIWAN TS317 SEMICONDUCTOR 3 -T e rm ina l A d ju sta b le P ositive V o lta g e R egulator pb RoHS COMPLIANCE TO-220 TO-263 TO-252 <D2PAK) 47 >s| m n SO T-223 (DPAK) : i 1 2 & : 12 3 Pin D e fin itio n : 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2


    OCR Scan
    PDF TS317 O-220 O-263 O-252 OT-223 TS317 O-220, O-263, O-252 1N4D02 0163f TS317CM TS317CP TS317CW TS317CZ U014 LADJ