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    D18.3 PACKAGE Search Results

    D18.3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    D18.3 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D18.3 Package Intersil 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE Original PDF

    D18.3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CDIP2-T18

    Abstract: 2N18 18-LEAD D-6 PACKAGE
    Text: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH c1 -A- 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A


    Original     		PDF MIL-STD-1835 CDIP2-T18 CDIP2-T18 2N18 18-LEAD D-6 PACKAGE

    CDIP2-T18

    Abstract: MARK S2 18-LEAD D-6 PACKAGE
    Text: Ceramic Package Ceramic Dual-In-Line Metal Seal Packages SBDIP c1 -A- D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S INCHES (c) SECTION A-A D S D


    Original     		PDF MIL-STD-1835 CDIP2-T18 CDIP2-T18 MARK S2 18-LEAD D-6 PACKAGE

    CDP1802 MICROPROCESSOR

    Abstract: CDP1802 CDP1 series cdp1800series CDP1824 CDP-1802 CDP1800-series CDP1824CD CDP1824CD3 CDP1824CE
    Text: • Access Time - 610ns .at VDD = 5V - 320ns .at VDD = 10V • No Precharge or Clock Required Ordering Information PACKAGE 5V 10V CDP1824CD3 CDP1824D3 SBDIP


    Original     		PDF 610ns 320ns CDP1824CD3 CDP1824D3 CDP1824/3 CDP1824C/3 32-word CDP1800-series CDP1802 CDP1802 MICROPROCESSOR CDP1802 CDP1 series cdp1800series CDP1824 CDP-1802 CDP1824CD CDP1824CE

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened 8-Channel Source Driver IS-2981RH, IS-2981EH Features The Star*Power Radiation Hardened IS-2981RH, IS-2981EH are monolithic devices designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The devices have a 5V to 80V operating supply


    Original     		PDF IS-2981RH, IS-2981EH IS-2981EH -200mA FN4869

    2114 Ram pinout 18

    Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
    Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in


    Original     		PDF MWS5114 1024-Word MWS5114 2114 Ram pinout 18 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram

    2114 Ram pinout 18

    Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
    Text: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in


    Original     		PDF MWS5114 1024-Word MWS5114 MWS5114-2 MWS5114-1 MWS5114-3 2114 Ram pinout 18 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X

    VDR 20-100

    Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
    Text: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs


    Original     		PDF MWS5114 1024-Word 200ns 250ns 300ns MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 MWS5114D3 VDR 20-100 MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3

    CDP1824

    Abstract: CDP1802 CDP1824C CDP1824CD3 CDP1824D3 CDP1824D
    Text: CDP1824/3, CDP1824C/3 S E M I C O N D U C T O R High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V


    Original     		PDF CDP1824/3, CDP1824C/3 32-Word 610ns 320ns CDP1824/3 CDP1824C/3 CDP1800-series CDP1802 CDP1824 CDP1824C CDP1824CD3 CDP1824D3 CDP1824D

    CDP1802

    Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3
    Text: CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V


    Original     		PDF CDP1824/3, CDP1824C/3 32-Word 610ns 320ns CDP1824/3 CDP1824C/3 CDP1800-series CDP1802 CDP1824 CDP1824C CDP1824CD3 CDP1824D3

    CDP1824

    Abstract: CDP1824EX CDP1802 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E
    Text: CDP1824, CDP1824C S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns


    Original     		PDF CDP1824, CDP1824C 32-Word 710ns 320ns CDP1824 CDP1824C CDP-1800 CDP1802 CDP1824EX CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E

    CDP1802

    Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3
    Text: CDP1824/3, CDP1824C/3 TM High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V


    Original     		PDF CDP1824/3, CDP1824C/3 32-Word 610ns 320ns CDP1824/3 CDP1824C/3 CDP1800-series CDP1802 CDP1824 CDP1824C CDP1824CD3 CDP1824D3

    CDP1802

    Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX
    Text: CDP1824, CDP1824C TM 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns


    Original     		PDF CDP1824, CDP1824C 32-Word 710ns 320ns CDP1824 CDP1824C CDP-1800 CDP1802 CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX

    CDP1802

    Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX
    Text: CDP1824, CDP1824C 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns The CDP1824 and CDP1824C are 32-word x 8-bit fully static


    Original     		PDF CDP1824, CDP1824C 32-Word 710ns 320ns CDP1824 CDP1824C CDP-1800 CDP1802 CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX

    rom 1K x 8

    Abstract: CDM6116 CDP1800 CDP1866 CDP1867 CDP1881C CDP1881CE CDP1882 CDP1882C CDP1882CE
    Text: CDP1881C, CDP1882, CDP1882C S E M I C O N D U C T O R CMOS 6-Bit Latch and Decoder Memory Interfaces March 1997 Features Description • Performs Memory Address Latch and Decoder Functions Multiplexed or Non-Multiplexed The CDP1881C, CDP1882 and CDP1882C are CMOS 6-bit


    Original     		PDF CDP1881C, CDP1882, CDP1882C CDP1882 CDP1882C CDP1800 CDP1800-Series CDP1800 CDM6116A rom 1K x 8 CDM6116 CDP1866 CDP1867 CDP1881C CDP1881CE CDP1882CE

    Untitled

    Abstract: No abstract text available
    Text: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in


    OCR Scan     		PDF MWS5114 1024-Word S5114 S5114-2 MWS5114-1 S5114-3

    Untitled

    Abstract: No abstract text available
    Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in


    OCR Scan     		PDF MWS5114 1024-Word S5114 MWS5114-3 MWS5114-2 MWS5114-1

    memory ic 2114

    Abstract: 5114E
    Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in


    OCR Scan     		PDF MWS5114 1024-Word S5114 S5114-3 S5114-2 S5114-1 memory ic 2114 5114E

    AL 20 MRD

    Abstract: No abstract text available
    Text: CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static RandoiTi-Access Memory March 1997 Features Description • Access Time The CDP1824/3 and CDP1824C/3 types are high-reliability CMOS 32-word x 8-bit fully static random-access memories for use in CDP1800-series microprocessor systems. These


    OCR Scan     		PDF CDP1824/3, CDP1824C/3 32-Word CDP1824/3 CDP1824C/3 CDP1800-series CDP1802 CDP182ons AL 20 MRD

    Untitled

    Abstract: No abstract text available
    Text: CDP1824/3, CDP1824C/3 HARRIS S E M I C O N D U C T O R High-Reliability CMOS 32-Word x 8-Bit Static RandoiTi-Access Memory March 1997 Features Description • Access Time The CDP1824/3 and CDP1824C/3 types are high-reliability CMOS 32-word x 8-bit fully static random-access memories


    OCR Scan     		PDF CDP1824/3, CDP1824C/3 32-Word CDP1824/3 CDP1824C/3 CDP1800-series CDP1802 610ns. 320ns.

    Untitled

    Abstract: No abstract text available
    Text: CDP1824, CDP1824C H A F R R IS S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast A c ce ss T im e - V d d = 5 V . .7 1 0 n s - V DD = 1 0 V .


    OCR Scan     		PDF CDP1824, CDP1824C 32-Word CDP1824 CDP1824C CDP-1800 CDP1802

    cdp1824

    Abstract: No abstract text available
    Text: CDP1824, CDP1824C H A F R F R IS S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Time - V dd = 5 V . 710ns - VDD = 1 0 V . 320ns


    OCR Scan     		PDF CDP1824, CDP1824C 32-Word 710ns 320ns CDP1824 CDP1824C CDP-1800 CDP1802

    CDP1824

    Abstract: CDP1824 MICROPROCESSOR
    Text: CDP1824, CDP1824C Semiconductor 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Tim e - V d d = 5 V .710ns - V DD = 1 0 V . 320ns


    OCR Scan     		PDF CDP1824, CDP1824C 32-Word CDP1824 CDP1824C CDP-1800 CDP1802 CDP1824 MICROPROCESSOR

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M C O N D U C T O R CA 3306, C A 3306A , C A3306C 6-Bit, 1 5 M S P S , Flash A/D C onverters August 1997 Features Description • CMOS Low Power with Video Speed T y p 70mW • Parallel Conversion Technique • Signal Power Supply V o ltage.3V to 7.5V


    OCR Scan     		PDF A3306C 15MHz CA3306 15MHz, CA3306, CA3306A, CA3306C

    ca3306

    Abstract: CA3300 8 bit full adder 74 30Mhz oscilloscope CA3306M
    Text: CA3306, CA3306A, CA3306C 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Description Features • CMOS Low Power with Video Speed T y p The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power


    OCR Scan     		PDF CA3306, CA3306A, CA3306C CA3306 15MHz, CA3300 8 bit full adder 74 30Mhz oscilloscope CA3306M