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    D1255 Price and Stock

    GCT Semiconductor Inc BD125-50-A-0305-0580-L-B

    HEADER DUAL 1.27MM VERT SMT 50PO
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    DigiKey BD125-50-A-0305-0580-L-B Reel 2,000 1,000
    • 1 -
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    • 1000 $2.13231
    • 10000 $1.91173
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    BD125-50-A-0305-0580-L-B Cut Tape 997 1
    • 1 $3.68
    • 10 $3.338
    • 100 $2.9411
    • 1000 $2.49996
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    BD125-50-A-0305-0580-L-B Digi-Reel 1
    • 1 $3.68
    • 10 $3.338
    • 100 $2.9411
    • 1000 $2.49996
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    Quantic Evans HC4D125561HT

    Wet Tantalum
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    DigiKey HC4D125561HT 41 1
    • 1 $345
    • 10 $264
    • 100 $241
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    Ruland Manufacturing Co Inc DCD12-5-5-A

    5/16" X 5/16" DISC COUPLING
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    DigiKey DCD12-5-5-A Bag 13 1
    • 1 $134.94
    • 10 $134.94
    • 100 $134.94
    • 1000 $134.94
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    Maudlin Products MSD125-5

    SLOTTED SHIM,5X5 INX0.125IN,PK5
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    DigiKey MSD125-5 Box 10 1
    • 1 $65.2
    • 10 $65.2
    • 100 $65.2
    • 1000 $65.2
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    Ruland Manufacturing Co Inc UD12-5-5-F

    5/16"X5/16" STEEL U JOINT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UD12-5-5-F Bag 2 1
    • 1 $300.56
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    D1255 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D1255 Radionics Control/Communicators Original PDF

    D1255 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1255

    Abstract: No abstract text available
    Text: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.


    Original     		PDF U/D1255P O-252 O-251 O-252AA Tube/TO-252 O-252 D1255

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V


    Original     		PDF U/D1255P O-252 O-251 O-252AA O-252

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.


    Original     		PDF U/D1255P O-252 O-251 O-252AA Tube/TO-252 O-252

    EPIGAP Optoelektronik

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-525-0.9 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness anode gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in


    Original     		PDF EPC-525-0 D-12555 EPIGAP Optoelektronik

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip ELC-770-15 26.04.2012 rev. 03 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P anode up typ. dimensions (µm) 325 Ø120 typ. thickness 180 µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm structured, 25% covered LED-03


    Original     		PDF ELC-770-15 LED-03 EL2-770-15 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip ELC-840-28-1 01.07.2011 rev. 07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 460 360 300 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered


    Original     		PDF ELC-840-28-1 PD-02 EL2-840-28-1 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip EL1-750-21 01.07.2011 rev. 06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered


    Original     		PDF EL1-750-21 PoC-05 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip EL1-950-11 01.12.2011 rev. 03 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P anode up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm, PoC-05 Optical and Electrical Characteristics


    Original     		PDF EL1-950-11 PoC-05 D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.22-3 04.07.2011 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 460 ±20 150 220 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the


    Original     		PDF EPC-1300-0 D-12555

    Untitled

    Abstract: No abstract text available
    Text: EPC-740-0.5 Photodiode-Chip 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 460 360 300 typ. thickness 300 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm


    Original     		PDF EPC-740-0 PD-02 125oelektronik D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-525-0.5-1 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 430 Ø110 typ. thickness 270 (±20) µm 470 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm


    Original     		PDF EPC-525-0 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip ELC-800-25 01.07.2011 rev. 09 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered


    Original     		PDF ELC-800-25 LED-03 EL2-800-25 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip EL1-690-27 01.07.2011 rev. 04 Radiation Type Technology Electrodes Red DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 360 120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered LED-05


    Original     		PDF EL1-690-27 LED-05 D-12555

    Untitled

    Abstract: No abstract text available
    Text: LED - Chip EL1-810-21 01.07.2011 rev. 11 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 1000 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered


    Original     		PDF EL1-810-21 PoC-05 D-12555

    EPD-440-0/0.9

    Abstract: uv photodiode, GaP EPD-440-0 440-nm
    Text: Photodiode EPD-440-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode


    Original     		PDF EPD-440-0-0 D-12555 EPD-440-0 EPD-440-0/0.9 uv photodiode, GaP EPD-440-0 440-nm

    Equivalent IR 740

    Abstract: ELC-68
    Text: Photodiode EPD-740-9-0.4 6/28/2007 Preliminary rev. 01/07 Wavelength Type Technology Case Infrared SMD AlGaAs/AlGaAs TOPLED Description 2,8 ± 0,2 2,2 ± 0,1 Selective photodiode mounted in TOPLED PLCC-2 package, for easy circuit board mounting and assembling of arrays. Narrow response range 740


    Original     		PDF EPD-740-9-0 ELC-68 D-12555 Equivalent IR 740 ELC-68

    v40150

    Abstract: No abstract text available
    Text: Photodiode EPD-150-0-2.5 6/21/2007 Preliminary rev. 05/07 Wavelength Type Technology Case VUV Schottky Contact GaP TO-39 + sapphire window Description 0, 1 ± 0,03 chip location Ø9,14 ± 0,1 Ø7,62 4,50 chip location 8,13 ± 0,05 9, 90 ± 0,45 5,08 Wide bandwidth and high sensitivity from VUV up


    Original     		PDF EPD-150-0-2 D-12555 EPD-150-0 v40150

    EPC-880-1

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-880-1.4 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 1360 1000 960 typ. thickness 300 µm anode gold alloy, 1.5 µm cathode


    Original     		PDF EPC-880-1 PD-13 EP-880-1 D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode EPD-525-3-0.5 27.04.2007 Preliminary rev. 01/07 Wavelength Type Technology Case Blue-Green water clear GaP 3 mm plastic lens Description Selective photodiode mounted in standard 3 mm package with standoff. Narrow bandwidth and high spectral sensitivity in the range of max. eye


    Original     		PDF EPD-525-3-0 D-12555

    TO-39, UVC

    Abstract: uvc photodiode photodiode 011
    Text: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear


    Original     		PDF EPD-270-0-0 D-12555 TO-39, UVC uvc photodiode photodiode 011

    tl8w/08

    Abstract: TL8W
    Text: UVA - Sensor Head Rev 03/08 This optical sensor head is designed to measure irradiance in the UVA wavelength range. It is equipped with an inbuilt amplifier which allows irradiance measurement over An several analogous decades. voltage will be output, which is


    Original     		PDF D-12555 tl8w/08 TL8W

    EPD-440-0-2

    Abstract: uv photodiode, GaP BURNER EPD-440-0
    Text: Photodiode EPD-440-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 Anode ± 0,05 05


    Original     		PDF EPD-440-0-2 ELC-70 D-12555 EPD-440-0 uv photodiode, GaP BURNER EPD-440-0

    Untitled

    Abstract: No abstract text available
    Text: Photodiode EPD-740-5-0.5 19.11.2007 rev. 02 Wavelength Type Technology Case Infrared water clear AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range 740 nm peak by means of integrated filter


    Original     		PDF EPD-740-5-0 D-12555

    Untitled

    Abstract: No abstract text available
    Text: Photodiode EPD-365-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UG-11 filter Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode


    Original     		PDF EPD-365-0-0 UG-11 D-12555 EPD-365-0