Untitled
Abstract: No abstract text available
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)
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Original
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
TQFP64
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PDF
|
D25 200 P5
Abstract: No abstract text available
Text: D.CRCW.HR Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
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Original
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D11HR
CRCW0603HR
D12HR
CRCW0805HR
D25HR
CRCW1206HR
CECC40000
EN140400
09-Oct-00
D25 200 P5
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PDF
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crcw0603
Abstract: D25 200 P5
Text: D.HR/CRCW Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
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Original
|
D11HR
CRCW0603
D12HR
CRCW0805
D25HR
40401-802/EIA-575
11M-470M
CRCW1206
D25 200 P5
|
PDF
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: nb 358 d
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
PQFP100
14x20
TQFP100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
nb 358 d
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PDF
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SMA0207-MK2
Abstract: NKS3 resistors CHP0603 RS68Y RN6015 RS58Y SFR25H RC41U 39 RC31U RCMS02
Text: Surface Mount Film Resistors Vishay FEATURES • Thick and thin film resistor chips • Metal film MELF resistors • CECC and MIL approved styles • Suitable for auto-Insertion equipment PRODUCT DESCRIPTION Thick Film Chip Resistors CECC approval available
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Original
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10-1M
D10/CRCW0402
1-10M
D11/CRCW0603
7K-10G
300-50G
500-200G
SMA0207-MK2
NKS3 resistors
CHP0603
RS68Y
RN6015
RS58Y
SFR25H
RC41U 39
RC31U
RCMS02
|
PDF
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marking P5
Abstract: 686J 40401 CRCW0603 D25HR CRCW0805 CRCW1206 d110603 157J
Text: D.HR/CRCW Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
40401-802/EIA-575
D11HR
CRCW0603
11M-470M
D12HR
CRCW0805
D25HR
3216ime
CECC40000
marking P5
686J
40401
CRCW0603
D25HR
CRCW0805
CRCW1206
d110603
157J
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PDF
|
TEC201
Abstract: CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler
Text: ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256
|
Original
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ST92124xxx-Auto/ST92150xxxxx-Auto/
ST92250xxxx-Auto
8/16-bit
J1850
TEC201
CORE F5A
MARKING D55
mcl psc-2
dap 6
Marking R192
DAP 015
ST9 Compiler
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PDF
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: DAP7 CSTCR4M00G55A-R0 CTSR J1850 LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
16-bit
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DAP7
CSTCR4M00G55A-R0
CTSR
LQFP100
LQFP64
PQFP100
ST92F150JDV1
ST92F250CV2
|
PDF
|
PxC00
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR CORE F5A ST92F124V1QB f2f decoder ic Transistor 952 1075-1 lta8 f5b FERRITE bead f2f decoder ic speed F90 P02
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
LQFP64
14x14
PQFP100
14x20
LQFP100
ST92F124R1T6
PxC00
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
CORE F5A
ST92F124V1QB
f2f decoder ic
Transistor 952 1075-1
lta8
f5b FERRITE bead
f2f decoder ic speed
F90 P02
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PDF
|
Untitled
Abstract: No abstract text available
Text: D.HR/CRCW Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
40401-802/EIA-575
D11HR
CRCW0603
11M-470M
D12HR
CRCW0805
D25Hs
CECC40000
EN140400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D.HR/CRCW Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
D11HR
CRCW0603
D12HR
CRCW0805
D25HR
CRCW1206
11M-470M
CECC40000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D.HR/CRCW. Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
D11HR
CRCW0603HR
D12HR
CRCW0805HR
D25HR
CRCW1206HR
CECC40000
EN140400
09-May-01
|
PDF
|
ST92150JDV1-Auto
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR F2D transistor CSTCR4M00G55A-R0 s a19 fmp J1850 LQFP100 LQFP64 PQFP100 D84 TRANSISTOR
Text: ST92124xxx-Auto/ST92150xxxxx-Auto ST92250xxxx-Auto 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
|
Original
|
ST92124xxx-Auto/ST92150xxxxx-Auto
ST92250xxxx-Auto
8/16-BIT
J1850
14x14
16-bit
ST92150JDV1-Auto
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
F2D transistor
CSTCR4M00G55A-R0
s a19 fmp
LQFP100
LQFP64
PQFP100
D84 TRANSISTOR
|
PDF
|
et D149 diode
Abstract: D44 MARKING
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
PQFP100
14x20
TQFP100
et D149 diode
D44 MARKING
|
PDF
|
|
|
RT-6
Abstract: No abstract text available
Text: D.HR/CRCW.HR Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
D11HR
CRCW0603HR
D12HR
CRCW0805HR
D25HR
CRCW1206HR
11M-470M
CECC40000
RT-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D.HR/CRCW. Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
Original
|
D11HR
CRCW0603HR
D12HR
CRCW0805HR
D25HR
CRCW1206HR
11M-470M
CECC40000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM
|
Original
|
ST92F124xx/ST92F150Cxx/
ST92F150JDV1/ST92F250CV2
8/16-bit
J1850
|
PDF
|
SMD Resistors, Arrays and Networks
Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
vse-db0010-0611
SMD Resistors, Arrays and Networks
STR 20012
WSK 013 070 eb
potentiometer vishay draloric 61
Mini Melf MMA 0204-50
a006 mosfet
Micro MELF "Land Pattern"
tca 4401
tuner uv 915 Schematic
MINIMELF resistors
|
PDF
|
IFR 630 MF
Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
Text: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
|
Original
|
ST92F124xx
ST92F150Cxx
ST92F150JDV1
ST92F250CV2
8/16-bit
J1850
14x20
LQFP100
14x14
PQFP100
IFR 630 MF
4-bit parity checker mark/space odd/even
DAP7
50 led flasher circuit with pdf format
f2f decoder ic
2203F
xck-p
5.5v 1.0f
body marking MCL
CSTCR4M00G55A-R0
|
PDF
|
f2f decoder ic philips
Abstract: LOG TX2 1044 transistor marking D9 ic tda 1085 LTah basic stamp BS2 ic CSTCR4M00G55A-R0 stl motor control 64 lead ltbhr J1850
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
TQFP64
f2f decoder ic philips
LOG TX2 1044
transistor marking D9
ic tda 1085
LTah
basic stamp BS2 ic
CSTCR4M00G55A-R0
stl motor control 64 lead
ltbhr
|
PDF
|
IFR 630 MF
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR AN1152 basic stamp BS2 china tv schematic diagram CSTCR4M00G55A-R0 DAP7 STIM 202 diode MARKING f54 PQFP100
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
16-bit
IFR 630 MF
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
AN1152
basic stamp BS2
china tv schematic diagram
CSTCR4M00G55A-R0
DAP7
STIM 202
diode MARKING f54
PQFP100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
16-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM
|
Original
|
ST92F124xx/ST92F150Cxx/
ST92F150JDV1/ST92F250CV2
8/16-bit
J1850
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D.CRCW.HR Vishay Thick Film, Rectangular, High Value Resistors FEATURES • Thick film on high quality ceramic • Protective over glaze passivation • SnPb contacts on Ni barrier layer • Silver palladium contacts for conductive adhesive attachment on request
|
OCR Scan
|
D11HR
0603H
D12HR
0805H
D25HR
1206H
|
PDF
|