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    D10S30 Price and Stock

    Samtec Inc FFMD-10-S-30.00-01

    .050 CABLE PLUG
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    Mouser Electronics FFMD-10-S-30.00-01
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    Samtec Inc TCSD-10-S-30.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
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    Newark TCSD-10-S-30.00-01 Bulk 1
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    Samtec Inc TCMD-10-S-30.00-01

    2MM DOUBLE ROW MALE IDC ASSEMBLY
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    DigiKey TCMD-10-S-30.00-01 Bulk 1
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    Samtec Inc HCSD-10-S-30.00-01

    IDC SOCKET AND TERMINAL CABLE AS
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    Mouser Electronics HCSD-10-S-30.00-01
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    Samtec Inc IDSD-10-S-30.00-ST4

    INSULATION DISPLACEMENT TERMINAL
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    Mouser Electronics IDSD-10-S-30.00-ST4
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    D10S30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D10S30

    Abstract: SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary V VRRM 300 material - Silicon Carbide  Switching behavior benchmark  No reverse recovery  No temperature influence on P-TO220-2-2.


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 SDB10S30 SDP10S30 SDT10S30 Q67040-S4372 Q67040-S4373 Q67040-S4447 P-TO220-2-2

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4372 Q67040-S4447

    P-TO220SMD

    Abstract: No abstract text available
    Text: SDB10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF


    Original     		PDF SDB10S30 P-TO220-3 Q67040-S4373 D10S30 P-TO220SMD

    871C-D1NP5-P3

    Abstract: 871C-DT4NP12-D4 871c-n15r30 871C-DH2M12-D4 871C-A10C30-A2 871C-D1NP5-E2 871C-C15R30 871C-DH8M18-D4 P4R12 871C-DM1NP4-E2
    Text: Inductive Proximity Sensors Bulletin 871C Plastic Face/Plastic Barrel or Nickel-Plated Brass Barrel Description Features Styles Bulletin 871C inductive proximity sensors are self-contained, general purpose, solid-state devices designed to sense the presence of ferrous and


    Original     		PDF 375mm/V 875mm/V 25mm/V 871C-D1NP5-P3 871C-DT4NP12-D4 871c-n15r30 871C-DH2M12-D4 871C-A10C30-A2 871C-D1NP5-E2 871C-C15R30 871C-DH8M18-D4 P4R12 871C-DM1NP4-E2

    D4AP18

    Abstract: 871C-N15R30 871C-DH2M12-D4 C8R18 871C-D1NP4-E2 871C-DT5NP18-D4 871C-DT4NP12-D4 D5S18 871C-DT10NP30-D4 871C-A5N18-N3
    Text: Inductive Proximity Sensors Bulletin 871C Plastic Face/Plastic Barrel or Nickel-Plated Brass Barrel Description Features Styles Bulletin 871C inductive proximity sensors are self-contained, general purpose, solid-state devices designed to sense the presence of ferrous and


    Original     		PDF 375mm/V 875mm/V 25mm/V D4AP18 871C-N15R30 871C-DH2M12-D4 C8R18 871C-D1NP4-E2 871C-DT5NP18-D4 871C-DT4NP12-D4 D5S18 871C-DT10NP30-D4 871C-A5N18-N3

    D10S30

    Abstract: 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd
    Text: SDB10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 nC IF 10


    Original     		PDF SDB10S30 P-TO220-3 Q67040-S4373 D10S30 D10S30 300V Schottky Diode smd Q67040-S4373 SDB10S30 SDP10S30 2t smd

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220-3 P-TO220-3 Q67040-S4372 Q67040-S4447

    D10S30

    Abstract: Q67040-S4372 Schottky diode TO220 Q67040-S4447 SDP10S30 SDT10S30
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4372 D10S30 D10S30 Q67040-S4372 Schottky diode TO220 Q67040-S4447 SDP10S30 SDT10S30

    Schottky diode TO220

    Abstract: d 1398 infineon 6260 PG-TO220 power Diode 200V 10A D10S30 Q67040-S4372 Q67040-S4447 SDP10S30 SDT10S30
    Text: SDP10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4372 D10S30 Schottky diode TO220 d 1398 infineon 6260 PG-TO220 power Diode 200V 10A D10S30 Q67040-S4372 Q67040-S4447 SDP10S30 SDT10S30

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on


    Original     		PDF SDP10S30 SDT10S30 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4372 Q67040-S4447

    Untitled

    Abstract: No abstract text available
    Text: SDP10S30 SDB10S30 Preliminary data Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 • Switching behavior benchmark VRRM • No reverse recovery Qc 23 nC • No temperature influence on IF 10


    Original     		PDF SDP10S30 SDB10S30 P-TO220-3 P-TO220-3-1 Q67040-S4372 D10S30

    D10S30

    Abstract: Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30
    Text: SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM  Switching behavior benchmark  No reverse recovery Qc 23 nC  No temperature influence on IF 10


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 Q67040-S4372 Q67040-S4373 SDB10S30 SDP10S30 SDT10S30

    D10S30

    Abstract: diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1
    Text: SDP10S30, SDB10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide • No reverse recovery • No temperature influence on P-TO220-2-2. the switching behavior V


    Original     		PDF SDP10S30, SDB10S30 SDT10S30 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP10S30 Q67040-S4372 D10S30 D10S30 diode smd marking code 435 Q67040-S4372 Q67040-S4373 Q67040-S4447 SDB10S30 SDP10S30 SDT10S30 P-TO220-3-1

    871L-B20E40-T2

    Abstract: 871l-xcb15s40 872C-D4NP12-E2 872c-d4np12-d4 872c-dh4np12-d4 871C-P5A18 872C-D5NP18-D4 871C-P2A12 875CP-D20NP30-A2 871C-C5A18
    Text: Inductive, Ultrasonic, and Capacitive Sensor/ Programmable Controller Interface Manual 1771 PLCR I/O 1746 SLCt I/O 1747 SLCt I/O 1791 Block I/O 1794 Flext I/O 1761 MicroLogixt 1000 Preferred Compatibility How To Use This Manual The information in this manual is divided into two sections. The first section


    Original     		PDF