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    D100S Search Results

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    D100S Price and Stock

    Rochester Electronics LLC RD100S-T1-A

    RD100S - 200MW ZENER DIODE
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    DigiKey RD100S-T1-A Bulk 168,000 3,015
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    Rochester Electronics LLC RD100S-T1-AT

    RD100S-T1-AT - ZENER DIODES200 M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD100S-T1-AT Bulk 54,000 3,015
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    Melexis Microelectronic Integrated Systems MLX81115KLW-AAD-100-SP

    IC LIN RGB CTRLR 32KB 6CH 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLX81115KLW-AAD-100-SP Tube 1,400 1
    • 1 $4.97
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    Mouser Electronics MLX81115KLW-AAD-100-SP 20
    • 1 $4.97
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    Central Semiconductor Corp CBR1-D100S TR13 PBFREE

    BRIDGE RECT 1PHASE 1KV 1A 4SMDIP
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    DigiKey CBR1-D100S TR13 PBFREE Cut Tape 434 1
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    Avnet Americas CBR1-D100S TR13 PBFREE Reel 2,000
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    Micro Commercial Components MD100S16M2-BP

    BRIDGE RECT 3P 1.6KV 100A M2 P
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    DigiKey MD100S16M2-BP Bulk 181 1
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    Find more D100S price and stock on Findchips.com

    D100S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D100S06B Eupec 100A Iout, 600V Vrrm General Purpose Silicon Rectifier Scan PDF
    D100S08B Eupec 100A Iout, 800V Vrrm General Purpose Silicon Rectifier Scan PDF
    D100S10B Eupec 100A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier Scan PDF

    D100S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KB-D100SRW

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C.boards.


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 MAR/25/2011 KB-D100SRW

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.


    Original     		PDF 89mmx3 KB-D100SURKW DSAK2968 JAN/04/2011 KB-D100SURKW

    6KB6

    Abstract: 6KB2 6KB1 h100srw b100srw
    Text: LED LIGHT BARS Kingbright KB-A100SRW,-B100SRW,-C100SRW,-D100SRW,-E100SRW, -F100SRW,-G100SRW,-H100SRW - , -2835SGD-2870SGD,-2885SGD,-2400YW,-2450YW,-2755YW,


    Original     		PDF KB-A100SRW -B100SRW -C100SRW -D100SRW -E100SRW, -F100SRW -G100SRW -H100SRW KB-2300EW -2350EW 6KB6 6KB2 6KB1 h100srw b100srw

    KB-2600EW

    Abstract: KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700
    Text: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-D100SRW SUPER BRIGHT RED KB-2700YW YELLOW KB-2800SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB-2600EW The High Efficiency source color devices are made with


    Original     		PDF 89mmx3 KB-2600EW KB-D100SRW KB-2800SGD KB-2700YW KDA0468 SEP/20/2001 KB-2600EW KB-2700YW KB-2800SGD KB-D100SRW KDA0468 kb2700

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.


    Original     		PDF 89mmx3 KB-D100SURKW DSAK2968 APR/13/2013

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 MAR/26/2005

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 OCT/21/2005

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. LOW CURRENT OPERATION The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting EASILY MOUNTED ON P.C.BOARDS.


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 APR/22/2005

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB-D100SRW Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY SUPER BRIGHT RED MOUNTED ON P.C. BOARDS. The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 DEC/26/2002 KB-D100SRW

    KB-D100SRW

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with z LOW CURRENT OPERATION Gallium Aluminum Arsenide Red Light Emitting Diode. z EASILY MOUNTED ON P.C.BOARDS.


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 MAY/14/2007 KB-D100SRW

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.


    Original     		PDF 89mmx3 KB-D100SURKW DSAM8385 JAN/20/2013

    6112

    Abstract: KB2600EW KB2700YW KB2800SGD KB-D100SRW
    Text: 8.89mmx3.81mm LED LIGHT BARS Features ! UNIFORM ! LOW HIGH EFFICIENCY RED KB-D100SRW SUPER BRIGHT RED KB2700YW YELLOW KB2800SGD SUPER BRIGHT GREEN Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY KB2600EW The High Efficiency source color devices are made with


    Original     		PDF 89mmx3 KB2600EW KB-D100SRW KB2800SGD KB2700YW CDA0838 NOV/18/2001 6112 KB2600EW KB2700YW KB2800SGD KB-D100SRW

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Description Features Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C.boards.


    Original     		PDF 89mmx3 KB-D100SURKW DSAK2968 JAN/04/2011

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number:KB-D100SRW Features zUNIFORM zLOW Description LIGHT EMITTING AREA. CURRENT OPERATION MOUNTED ON P.C.BOARDS. zFLUSH MOUNTABLE. zEXCELLENT The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting


    Original     		PDF 89mmx3 KB-D100SRW DSAA9424 OCT/31/2006

    RECTIFIER BRIDGE 25A 600V

    Abstract: CBR1F-D020S FAST RECOVERY DIODE 10A 400V diode 1000V 10a fast recovery diode 1000v 10A 10 AMP 1000V RECTIFIER DIODE
    Text: CBR1F-D020S SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount


    Original     		PDF CBR1F-D020S CBR1F-D020S CBR1FD020S CBR1FD040S CBR1FD060S RECTIFIER BRIDGE 25A 600V FAST RECOVERY DIODE 10A 400V diode 1000V 10a fast recovery diode 1000v 10A 10 AMP 1000V RECTIFIER DIODE

    CBR1-D020S

    Abstract: CBR1D060S D040S d020s
    Text: Central CBR1-D020S SERIES TM Semiconductor Corp. SURFACE MOUNT 1 AMP DUAL IN LINE BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.


    Original     		PDF CBR1-D020S CBR1-D020S D020S D040S CBR1D060S D080S D100S D040S d020s

    D86S

    Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
    Text: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.


    Original     		PDF TN0604N3 BT8952 RCV15 RCVCLK58 GND51 VAA50 XFS48 AGAIN1462 D68SH D36SH D86S 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2

    SN74LVC543

    Abstract: CI 7107
    Text: SN74LVC543 OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS299 - JANUARY 1993 - REVISED MARCH 1994 DB, DW, OR PW PACKAGE crop v ie w EP/C Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C


    OCR Scan     		PDF SN74LVC543 SCAS299 SCAS299- 01DDS50 CI 7107

    Untitled

    Abstract: No abstract text available
    Text: g MOTOROLA MC33206 MC33207 A dvance Information Rail-To-Rail Operational Amplifiers with Enable Feature LOW VOLTAGE RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SEMICONDUCTOR TECHNICAL DATA The MC33206/7 fam ily of operational am plifiers provide rail—to—rail


    OCR Scan     		PDF MC33206 MC33207 MC33206/7 MC33206/07, C33204 MC33207) MC33207,

    SN74LVC541

    Abstract: No abstract text available
    Text: SN74LVC541 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SCAS298 - JANUAR Y 1993 - REVISED M A RCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C DB, DW, OR PW PACKAGE


    OCR Scan     		PDF SN74LVC541 SCAS298 -100mA Vcc-02 l0H--12mA bl723 6553d3

    SN74LVC540

    Abstract: No abstract text available
    Text: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS S CAS297 - JANUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical Vo lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical Vqhv (Output V q h Undershoot)


    OCR Scan     		PDF SN74LVC540 SCAS297 bl723 D100S12 752S5

    SAC305

    Abstract: of component with BGA Staggered Pins IT3D-100S-BGA hirose it3 eutectic 200p35 SAC30S D-100S-B6A 200p35h JT3-200P-20H
    Text: IT3 C o n n e cto r S y s te m G e n e r a l In fo rm a tio n Document Number; ETAD-F0458 Revision 1.5 Section 2 General Hirose's IT3 connector system is designed to provide modular high-speed differential, single-ended and power connections between two parallel boards.


    OCR Scan     		PDF ETAD-F0458 SAC305 of component with BGA Staggered Pins IT3D-100S-BGA hirose it3 eutectic 200p35 SAC30S D-100S-B6A 200p35h JT3-200P-20H

    78f0034

    Abstract: btb 139 d78014 d78f0034 PD780023 pd78f0034 spy robot using avr PD780021 d780021 wpd780024
    Text: USER'S MANUAL ¿¿PD780024, 780034, 780024Y, 780034Y SUBSERÌES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY /¿PD780021 //PD780022 /iPD780023 /¿PD780024 /¿PD780021 (A) /¿PD780022(A) /iPD780023(A) /iPD780024(A) ¿¿PD780031 ¿¿PD780032 /¿PD780033 /¿PD780034


    OCR Scan     		PDF uPD780024 uPD780034 uPD780024Y uPD780034Y PD780021 //PD780022 /iPD780023 PD780024 PD780021 PD780022 78f0034 btb 139 d78014 d78f0034 PD780023 pd78f0034 spy robot using avr d780021 wpd780024

    IC SEM 2105

    Abstract: free sem 2105 sem 2105 diode e4f sem 2105 16 pin G10G2 MHPM7A5S120DC3 MHPM7A8A120A diode 8255 VQE 12
    Text: MOTOROLA Order this documenti by MHPM7A8A120A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7A8A120A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


    OCR Scan     		PDF MHPM7A8A120A/D MHPM7A5S120DC3) IC SEM 2105 free sem 2105 sem 2105 diode e4f sem 2105 16 pin G10G2 MHPM7A5S120DC3 MHPM7A8A120A diode 8255 VQE 12