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    D1 MARKING CODE DPAK TRANSISTOR Search Results

    D1 MARKING CODE DPAK TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    D1 MARKING CODE DPAK TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 FDD marking

    Date Code Marking STMicroelectronics PACKAGE DPAK

    Abstract: 13473
    Text: MJD31CT4-A Low voltage NPN power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application


    Original     		PDF MJD31CT4-A O-252 MJD32C O-252 MJD31C Date Code Marking STMicroelectronics PACKAGE DPAK 13473

    d1 marking code dpak transistor

    Abstract: MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


    Original     		PDF MJD32C O-252 MJD31C O-252 MJD32C MJD32CT4 d1 marking code dpak transistor MJD32CT4

    d1 marking code dpak transistor

    Abstract: No abstract text available
    Text: MJD32CT4-A Low voltage PNP power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application


    Original     		PDF MJD32CT4-A O-252 MJD31C O-252 MJD32C d1 marking code dpak transistor

    3543

    Abstract: No abstract text available
    Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


    Original     		PDF MJD31C O-252 MJD32C O-252 MJD31C MJD31CT4 3543

    MARKING L4 SOT89

    Abstract: No abstract text available
    Text: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage These low threshold depletion-mode normally-on transistors


    Original     		PDF DN2450 DSFP-DN2450 A020811 MARKING L4 SOT89

    369D

    Abstract: MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C TIP41 TIP42
    Text: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD41C MJD42C TIP41 TIP42 MJD41C/D 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C

    transistor D406

    Abstract: d406 transistor D406 JEDEC TO-252 LAND PATTERN AOD406 305 d-pak marking code 0/d406 transistor
    Text: Jan 2003 AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD406 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD406 AOD406 O-252 transistor D406 d406 transistor D406 JEDEC TO-252 LAND PATTERN 305 d-pak marking code 0/d406 transistor

    TRANSISTOR D412

    Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
    Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A

    transistor d404

    Abstract: D404 transistor d404 JEDEC TO-252 transistor datasheet d404 AOD404 alpha omega aos Lot Code Week D404 BE
    Text: July 2003 AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOD404 AOD404 O-252 transistor d404 D404 transistor d404 JEDEC TO-252 transistor datasheet d404 alpha omega aos Lot Code Week D404 BE

    d414

    Abstract: d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414 AOD414
    Text: July 2003 AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414 O-252 d414 d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414

    Silicon Power Transistor DPAK MJD42c

    Abstract: MJD42C TIP41 TIP42 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 dpak 369C
    Text: MJD41C NPN MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD41C MJD42C TIP41 TIP42 MJD41C/D Silicon Power Transistor DPAK MJD42c MJD42C 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 dpak 369C

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680

    ic 4510

    Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small


    Original     		PDF ST901T STD901T O-220 ic 4510 ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060

    Untitled

    Abstract: No abstract text available
    Text: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small


    Original     		PDF ST901T STD901T O-220

    MJD253

    Abstract: No abstract text available
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W


    Original     		PDF MJD243 MJD253 MJD243 MJD253

    369D

    Abstract: MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C TIP41 TIP42 TIP42 Application Note
    Text: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD41C MJD42C TIP41 TIP42 MJD41C/D 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C TIP42 Application Note

    d1 marking code dpak transistor

    Abstract: dpak-3 1000 watt amplifier TIP31 FOOTPRINT PNP Silicon Power Transistor DPAK 369A-13 NPN Silicon Power Transistor DPAK 500 watt power circuit diagram 500 watts amplifier all ic data
    Text: MJD31C NPN MJD32C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD31C MJD32C TIP31 TIP32 MJD31C/D d1 marking code dpak transistor dpak-3 1000 watt amplifier TIP31 FOOTPRINT PNP Silicon Power Transistor DPAK 369A-13 NPN Silicon Power Transistor DPAK 500 watt power circuit diagram 500 watts amplifier all ic data

    d1 marking code dpak transistor

    Abstract: d marking code dpak transistor data base dpak data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C
    Text: MJD41C NPN MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD41C MJD42C TIP41 TIP42 MJD41C/D d1 marking code dpak transistor d marking code dpak transistor data base dpak data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C

    Untitled

    Abstract: No abstract text available
    Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 MJD41C/D

    369D

    Abstract: mje3055 transistor MJE3055 MJD2955 MJD2955G MJD2955T4 MJD3055 MJE2955 MJD3055G
    Text: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 MJD2955/D 369D mje3055 transistor MJE3055 MJD2955 MJD2955G MJD2955T4 MJD3055 MJD3055G

    MJD2955T4

    Abstract: d marking code dpak transistor MJE2955 datasheet mje3055 MJD3055 MJE2955 369D MJD2955 MJD2955G MJE2955 power amplifier circuit
    Text: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 MJD2955/D MJD2955T4 d marking code dpak transistor MJE2955 datasheet mje3055 MJD3055 369D MJD2955 MJD2955G MJE2955 power amplifier circuit

    A 673 C2 transistor

    Abstract: tip41 369D-01
    Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01

    Untitled

    Abstract: No abstract text available
    Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 MJD41C/D