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    D1 INTERNATIONAL Search Results

    D1 INTERNATIONAL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC1767A Analog Devices LTC2997 Demo Board - Internal/ Visit Analog Devices Buy
    ADP1829-EVALZ Analog Devices 216-13B-02ck Cntrl + Internal Visit Analog Devices Buy
    ADP1828YRQZ-R7 Analog Devices HV Buck With Internal LDO Visit Analog Devices Buy
    ADP1829ACPZ-R7 Analog Devices 20V 20A Buck Cntrl + Internal Visit Analog Devices Buy
    ADP1828HC-EVALZ Analog Devices HV Buck With Internal LDO Visit Analog Devices Buy
    ADP1828ACPZ-R7 Analog Devices HV Buck With Internal LDO Visit Analog Devices Buy
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    D1 INTERNATIONAL Price and Stock

    Wire-Pro Inc (WPI) 17RR-D1-F-01-100

    Contact SKT Crimp ST Cable Mount Bulk
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    Onlinecomponents.com 17RR-D1-F-01-100 19,680
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    Picker Components PC785-1A-12C-D1-X

    Automotive Relay - 1FormA - SPST - 35A - Coil: 12VDC - Reverse Internal Diodes - Dust Cover - Plug-In
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    Picker Components PC784-1C-24S-D1-X

    Automotive Relay - 1FormC - SPDT - 35A - Coil: 24VDC - Reverse Internal Diodes - Sealed - Plug-In
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    Onlinecomponents.com PC784-1C-24S-D1-X
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    Picker Components PC784-1C-12C-D1-X

    Automotive Relay - 1FormC - SPDT - 35A - Coil: 12VDC - Reverse Internal Diodes - Dust Cover - Plug-In
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PC784-1C-12C-D1-X
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    Picker Components PC784-1A-12S-D1-X

    Automotive Relay - 1FormA - SPST - 35A - Coil: 12VDC - Reverse Internal Diodes - Sealed - Plug-In
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PC784-1A-12S-D1-X
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    D1 INTERNATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30N120D1

    Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
    Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1


    Original     		PDF 30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1

    30n120

    Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
    Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1


    Original     		PDF 30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9351PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF IRFHS9351PbF IRFHS9351T

    IRFHS9351

    Abstract: No abstract text available
    Text: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF 97572B IRFHS9351PbF IRFHS9351TRPBF IRFHS9351TR2PBF J-STD-020D IRFHS9351

    Untitled

    Abstract: No abstract text available
    Text: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF 97572B IRFHS9351PbF IRFHS9351TR J-STD-020Dâ

    car battery charger

    Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
    Text: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse


    Original     		PDF SGD524/D car battery charger NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode

    Untitled

    Abstract: No abstract text available
    Text: C B A REV. 01 02 03 1 D2 D2 D2 D1 D1 D1 F E D 04 05 MODIFICATION. DATE DRN 30/ 06/ 04 NEW DRAWING PART REF,QTY CHANGED 24/ 09/ 04 04/ 10/ 04 DUAL DIMENSIONING ADDED 11/ 01/ 05 ECN 05-012 22/ 02/ 06 ECN 06-034 NJB NJB NJB 1 NJB OW RESISTOR L L L CERAMIC BEADS


    Original     		PDF RMS-170)

    IEC EN 60947- 3 VDE 0660 107

    Abstract: V3N A-NF3-B-SI VDE 0660 IP 65 VN 16 NACH VDE 0660 PRESSURE SWITCH 32-F3-B-SI ET VDE 0660 ac3 50-F4-B-SI 80-F4-B-SI 50-PF4-B-SI AC20A
    Text: Nockenschalter Cam switches General Information Allgemeine Informationen 50 - 67 Cam switches Nockenschalter 68 - 88 Cam switches D1 Nockenschalter D1 Cam switches B2N Nockenschalter B2N Dimensions Maßzeichnungen 89 90 91 - 106 49 VN-Reihe VN series Technische Informationen


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: C B A REV. 01 02 03 1 D2 D2 D2 D1 D1 D1 F E D 04 05 MODIFICATION. DATE DRN 30/06/04 NEW DRAWING PART REF,QTY CHANGED 24/09/04 04/10/04 DUAL DIMENSIONING ADDED 11/01/05 ECN 05-012 22/02/06 ECN 06-034 NJB NJB NJB 1 NJB OW RESISTOR L L L CERAMIC BEADS 2 2 STYLE 2


    Original     		PDF RMS-170)

    vishay melf

    Abstract: No abstract text available
    Text: MELF Plastic VISHAY Vishay Semiconductors MELF Plastic Package Dimensions in Inches mm SOLDERABLE ENDS 1st BAND D2 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) D2 = D1 +- 0.008 (0.20) D1= 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.049 (1.25)


    Original     		PDF 30-Jan-04 D-74025 vishay melf

    ZMM120

    Abstract: ZMM2V0 zener diode 3.6V SOD80 zener 200 mW 100V zmm4v7 diode ZENER zmm3v6 DO-213AA ZMM10 ZMM11 ZMM13
    Text: ZMM1 thru ZMM 200 00 SURFACE MOUNT ZENER DIODES DO-213AA / MINI MELF SOLDERABLE ENDS CATHODE BAND D1= 0.066 1.676 0.060(1.524) D2 0.022(0.559) 0.016(0.406) 0.145(3.683) 0.131(3.327) D2=D1 +0 -0.008(0.20) Dimension in inches (millimeters ) FEATURES MECHANICAL DATA


    Original     		PDF DO-213AA OD-80) DO-35 ZPD51. Weigh40 ZMM120 ZMM2V0 zener diode 3.6V SOD80 zener 200 mW 100V zmm4v7 diode ZENER zmm3v6 ZMM10 ZMM11 ZMM13

    EIA-541

    Abstract: MS-012AA
    Text: PD - 96072A IRF7313UPbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description VDSS = 30V RDS on = 0.029Ω Top View Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 6072A IRF7313UPbF thro461 EIA-481 EIA-541. EIA-541 MS-012AA

    IRF7313

    Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
    Text: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91480B IRF7313 EIA-481 EIA-541. IRF7313 EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313

    IRF7343IPBF

    Abstract: NCH 60V 20A mosfet p-channel 12v
    Text: PD - 96088 IRF7343IPbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF7343IPbF EIA-481 EIA-541. IRF7343IPBF NCH 60V 20A mosfet p-channel 12v

    Untitled

    Abstract: No abstract text available
    Text: PD - 91480B IRF7313 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91480B IRF7313 EIA-481 EIA-541.

    IRF p-CHANNEL

    Abstract: mosfet p channel irf irf7343pbf IRF7343P IRF P CHANNEL MOSFET P-Channel irf f7101 P-CHANNEL 30V (DS) MOSFET
    Text: PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF7343PbF EIA-481 EIA-541. IRF p-CHANNEL mosfet p channel irf irf7343pbf IRF7343P IRF P CHANNEL MOSFET P-Channel irf f7101 P-CHANNEL 30V (DS) MOSFET

    f7101

    Abstract: IRF7316 91505B
    Text: PD - 9.1505B IRF7316 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1505B IRF7316 EIA-481 EIA-541. f7101 IRF7316 91505B

    connector 12 pin micro usb

    Abstract: micro USB B 5pin SOT23-6 MARKING be Marking D2 SOT23-6 Zener diode sot23-5 california micro df2 diode Zener diode sot23-5 A1 SOT23 PART marking d2 CA SOT23-5
    Text: PACUSB-D1/D2/D3 USB Downstream Port Terminator Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the


    Original     		PDF MILSTD-883D SC70-5 MO-203 SC70-5. connector 12 pin micro usb micro USB B 5pin SOT23-6 MARKING be Marking D2 SOT23-6 Zener diode sot23-5 california micro df2 diode Zener diode sot23-5 A1 SOT23 PART marking d2 CA SOT23-5

    SOT23-6 MARKING be

    Abstract: MO-178 MO-203 SC70-5 marking H.E SOT23-5 PACUSB-D2Y5R
    Text: USB Downstream Port Terminator PACUSB-D1/D2/D3 Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as


    Original     		PDF MIL-STD-883D SOT23-6 MARKING be MO-178 MO-203 SC70-5 marking H.E SOT23-5 PACUSB-D2Y5R

    SOT23-5 JEDEC

    Abstract: Marking D2 SOT23-6 MO-178 MO-203 SC70-5 df2 diode MICRO USB b Connector pcb SCHEMATIC usbdfxxw5 marking 564 sot23-6 MARKING E.5 SOT23-5
    Text: PACUSB-D1/D2/D3 USB Downstream Port Terminator Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the


    Original     		PDF MILSTD-883D SC70-5 MO-203 SC70-5. SOT23-5 JEDEC Marking D2 SOT23-6 MO-178 SC70-5 df2 diode MICRO USB b Connector pcb SCHEMATIC usbdfxxw5 marking 564 sot23-6 MARKING E.5 SOT23-5

    Untitled

    Abstract: No abstract text available
    Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91435C IRF7311

    30N120

    Abstract: 30n120d
    Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l


    OCR Scan     		PDF 30N120 30N120 IXDT30N120 O-247 D-68623 30n120d

    IRF7

    Abstract: No abstract text available
    Text: PD - 9.1606A International Rectifier I"R IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSF ET si n r - H E D1 1a r ; H E D1 S2 Q T ; n e D2


    OCR Scan     		PDF IRF7319 029ft 058ft w-541 IRF7