d05s60c
Abstract: IDT05S60C JESD22
Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDT05S60C
PG-TO220-2-2
D05S60C
d05s60c
IDT05S60C
JESD22
|
D05S60C
Abstract: No abstract text available
Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDT05S60C
PG-TO220-2-2
IDT05S60C
PG-TO220-2-2
D05S60C
|
D05S60C
Abstract: IDV05S60C
Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV05S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV05S60C Description
|
Original
|
PDF
|
IDV05S60C
IDVxxS60C
O220FullPAK
D05S60C
IDV05S60C
|
Untitled
Abstract: No abstract text available
Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 12 nC IF 5 A • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDH05S60C
PG-TO220-2
D05S60C
|
D05S60C
Abstract: No abstract text available
Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 12 nC IF 5 A • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDH05S60C
IDH05S60C
PG-TO220-2
D05S60C
|
Infineon power diffusion process
Abstract: D05S60C Schottky diode TO220 JESD22
Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV05S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV05S60C Description
|
Original
|
PDF
|
IDV05S60C
IDVxxS60C
O220FullPAK
Infineon power diffusion process
D05S60C
Schottky diode TO220
JESD22
|
D05S60C
Abstract: d05s IDH05S60C PG-TO22
Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 12 nC IF 5 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDH05S60C
IDH05S60C
PG-TO220-2
D05S60C
726-IDH05S60C
d05s
PG-TO22
|
IDH05S60C
Abstract: D05S60C JESD22
Text: IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 12 nC IF 5 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDH05S60C
PG-TO220-2
D05S60C
IDH05S60C
D05S60C
JESD22
|
D05S60C
Abstract: IDT05S60C JESD22 Tj-102
Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior
|
Original
|
PDF
|
IDT05S60C
PG-TO220-2-2
D05S60C
PG-TO220-2-2:
D05S60C
IDT05S60C
JESD22
Tj-102
|
Untitled
Abstract: No abstract text available
Text: IDT05S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 12 nC • No reverse recovery / No forward recovery I F @ T C < 140°C 5 A • Temperature independent switching behavior I F @ T C < 100°C
|
Original
|
PDF
|
IDT05S60C
PG-TO220-2-2
20mA2)
|
Untitled
Abstract: No abstract text available
Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV05S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV05S60C Description
|
Original
|
PDF
|
IDV05S60C
IDVxxS60C
O220FullPAK
|