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Infineon Technologies AG IDD04S60CBUMA1 DIODE SIC 600V 5.6A TO252-31
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDD04S60CBUMA1	Digi-Reel			1	1 $2.98 10 $2.98 100 $2.98 1000 $2.98 10000 $2.98	Buy Now
	IDD04S60CBUMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IDD04S60CBUMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IDD04S60C IDD04S60C 二极管, 4A 600V, 3针 TO-252封装
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ameya Holding Limited	IDD04S60C		818			1 - 10 - 100 - 1000 - 10000 -	Get Quote

D04S60C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd diode marking f4 Abstract: idd04 Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	PDF	IDD04S60C 20mA2) PG-TO252 IDD04S60C smd diode marking f4 idd04
Untitled Abstract: No abstract text available Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK
Untitled Abstract: No abstract text available Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	PDF	IDH04S60C PG-TO220-2 D04S60C
d04s60c Abstract: IDT04S60C JESD22 D04S60 Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT04S60C PG-TO220-2-2 D04S60C d04s60c IDT04S60C JESD22 D04S60
D04S60C Abstract: IDT04S60C JESD22 PG-TO220-2-2 Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT04S60C PG-TO220-2-2 D04S60C D04S60C IDT04S60C JESD22 PG-TO220-2-2
D04S60C Abstract: IDH04S60C JESD22 Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH04S60C PG-TO220-2 D04S60C D04S60C IDH04S60C JESD22
D04S60C Abstract: TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60 Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDD04S60C PG-TO252 D04S60C D04S60C TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60
D04S60C Abstract: diode it25 Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	PDF	IDH04S60C IDH04S60C PG-TO220-2 D04S60C diode it25
Infineon power diffusion process Abstract: Schottky diode TO220 D04S60C JESD22 Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK Infineon power diffusion process Schottky diode TO220 D04S60C JESD22
D04S60C Abstract: IDT04S60C Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT04S60C PG-TO220-2-2 IDT04S60C PG-TO220-2-2 D04S60C
Untitled Abstract: No abstract text available Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	PDF	IDD04S60C PG-TO252 20mA2)
D04S60C Abstract: IDV04S60C Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK D04S60C IDV04S60C
Untitled Abstract: No abstract text available Text: IDT04S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 4 A I F @ T C < 100°C 6 A • Revolutionary semiconductor material - Silicon Carbide	Original	PDF	IDT04S60C PG-TO220-2-2