D03S60C
Abstract: PG-TO220-2-2 IDT03S60C JESD22
Text: IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior Product Summary V DC 600 V Qc 5 nC IF 3 A • High surge current capability
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IDT03S60C
PG-TO220-2-2
D03S60C
D03S60C
PG-TO220-2-2
IDT03S60C
JESD22
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IDV03S60C
Abstract: Infineon power diffusion process Schottky diode TO220 JESD22
Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the
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Original
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IDV03S60C
IDVxxS60C
O220FullPAK
IDV03S60C
Infineon power diffusion process
Schottky diode TO220
JESD22
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Untitled
Abstract: No abstract text available
Text: IDT03S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 5 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 3 A • Temperature independent switching behavior I F @ T C < 100°C
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Original
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PDF
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IDT03S60C
PG-TO220-2-2
20mA2)
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the
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Original
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PDF
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IDV03S60C
IDVxxS60C
O220FullPAK
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