D03G60C
Abstract: IDD03SG60C JESD22
Text: IDD03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • No reverse recovery / No forward recovery QC 3.2 nC • Temperature independent switching behavior I F; T C< 130 °C
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IDD03SG60C
20mA2)
D03G60C
IDD03SG60C
JESD22
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D03G60C
Abstract: No abstract text available
Text: IDH03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 3.2 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH03SG60C
20mA2)
PG-TO220-2
D03G60C
D03G60C
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Untitled
Abstract: No abstract text available
Text: IDD03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 600 V QC 3.2 nC 3 A I F; T C< 130 °C
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IDD03SG60C
20mA2)
PG-TO252-3
D03G60C
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Untitled
Abstract: No abstract text available
Text: IDD03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 3.2 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDD03SG60C
20mA2)
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Untitled
Abstract: No abstract text available
Text: IDH03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 3.2 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH03SG60C
20mA2)
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D03G60C
Abstract: No abstract text available
Text: IDD03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 3.2 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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IDD03SG60C
20mA2)
PG-TO252-3
D03G60C
D03G60C
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smd diode SM 97
Abstract: D03G60C IDD03SG60C JESD22 6 pin smd diode infineon reflow
Text: IDD03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 600 V QC 3.2 nC 3 A I F; T C< 130 °C
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PDF
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IDD03SG60C
20mA2)
smd diode SM 97
D03G60C
IDD03SG60C
JESD22
6 pin smd diode
infineon reflow
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D03G60C
Abstract: No abstract text available
Text: IDH03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 600 V QC 3.2 nC 3 A I F; T C< 130 °C
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Original
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PDF
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IDH03SG60C
20mA2)
D03G60C
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D03G60C
Abstract: IDH03SG60C JESD22
Text: IDH03SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 600 V QC 3.2 nC 3 A I F; T C< 130 °C
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Original
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PDF
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IDH03SG60C
20mA2)
D03G60C
IDH03SG60C
JESD22
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