Contextual Info: 3QE 3> • 7^237 D0311S1 =1 " 3 S- pô\~ f Z 7 SGS-THOMSON ^ 7# 5 L iÛ T O « ! 2 N2368 S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2368 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed spe­

d0311

Abstract: preamplifier ADC VREG16 TSSOP16 XE3003 XE3006
Contextual Info: Data Sheet XE3003 VSSD VSSA VDD VREG11 Power supply management Microphone Bias VREG16 AIN Σ∆ modulator Amp. VREF SPI MISO SS SCK MOSI RESET XE3003 Decimator Serial Audio Interface Clock mgt BCLK SDO FSYNC MCLK XE3003 Low-Power Audio ADC Features General Description

d0311

Abstract: Buchanan B104 D0241 buchanan terminal blocks Buchanan 1546143-1 1546235-1 2b104 242 4-1437390-0 BU 110 2B112
Contextual Info: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244

EDI88512CA20NB

Abstract: EDI88512CA45 and45ns TM315
Contextual Info: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All

d0311

Abstract: TSSOP16 XE3004
Contextual Info: Data Sheet XE3004 VSSD VSSA VSSA VDD Power supply management RESET XE3004 VDDPA PWM DAC Power amplifier AOUTP AOUTN VSSPA SPI Serial Audio Interface Clock mgt MCLK SS SCK MOSI BCLK SDI FSYNC XE3004 Low-Power DAC Features General Description The XE3004 is an ultra low-power Digital to Analog

Contextual Info: QS75436 High-Speed CMOS 4K x 36 Block-Allocated Shared-Port RAM with Flexi-Burst Q FEATURES • Two independent 2K x 36-bit blocks • Independent port controls • Fast port access times: 20 ns, 25 ns, 30 ns - 50-MHz, 40-MHz, 33-MHz cycle times • Total bandwidth 3.6 Gbits/sec

Contextual Info: MA3022D100000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3022D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

epon 828

Abstract: EPROM 40PIN tmp68hc11 sb600 eeprom toshiba L 510 TMP68HC11A8 STRA 226 07241 OC106 TMP68C711E9
Contextual Info: TOSHIBA 1 TMP68C711E9 INTRODUCTION The TM P68C711E9 is an advanced 8 -b it m icrocontroller MCU w ith h ig h ly sophisticated on-chip peripheral capabilities. New design techniques were used to achieve a nom inal bus speed of 2.1MHz. In addition, the fully static design allows

Buchanan 1546143-1

Abstract: B112-BU 1546235-1 5-1437381-8 Buchanan Fuse block 1437397-9 BU 110 D0241 d0311 buchanan 200 series UL486e torque
Contextual Info: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244

Contextual Info: U s e r 's M a n u a l < £ 3 L 0 5 Chapter 5 Z8 In s t r u c t io n S et 5.1 Z8 FUNCTIONAL SUMMARY Z8 instructions can be divided functionally into the follow­ ing eight groups: • ■ ■ ■ Load Arithmetic Logical Program Control ■ ■ ■ ■ Bit Manipulation

Buchanan Fuse block 1437397-9

Abstract: d0312 tab FASTON screw mount d0311 buchanan fuse blocks D0318 368-BU 3-1437397-5 MEXICO FUSE P0311 P0372
Contextual Info: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks Fuse & Switch Product Facts High Density Blocks n Fuse and Switch Blocks rated 15A and 300V. n High Density 0.36" [9.14] centerline spacing saves panel space; at least 33 circuits per foot.

HPS082-0001

Abstract: D0650 Microwave PIN diode d0311 DFOC WE VQE 11 E DD211B DD311A DDF2311 DDF4311
Contextual Info: F IL M F IL n 3575745 m ic r o e l e c t r o n ic s M IC R O E L E C T R O N IC S • |L l I I I ■ DDDOmb fll3 I FLnn Microwave PIN Diode Drivers 7= 5-2-2./ The Ultimate fi Microelectronic Packaging and Interconnect Technology 106 Centennial Drwa fteftofly. MA 01960. USA • TEL 5081S31-8901. FAX: (508 532-9954

wram samsung

Abstract: 2W-25 OQ29
Contextual Info: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6006B10000000 Version

d0311

Abstract: VREG16 XE3005 XE3005I033 XE3006 XE3006I019
Contextual Info: Datasheet XE3005/XE3006 VSSD VSSA VSSA VDD VREF VREG11 Microphone Bias VREG16 Power supply management XE3006 RESET VDDPA AIN Σ∆ modulator Amp. PWM DAC Decimator AOUTP Power amplifier AOUTN VSSPA SPI Sandman Functions Serial Audio Interface Clock mgt MISO SS SCK MOSI SMAD SMDA BCLK SDI SDO FSYNC MCLK

KMM5322204AW

Contextual Info: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: MA6015B10000000 P-Ch 60V Fast Switching MOSFETs General Description Product Summery The MA6015B is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

CD laser pickup assembly

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N ' E OPT2Q2 1 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • BANDWIDTH: 50kHz The CIPT202 is an opto-electronic integrated circuit containing a photodiode and transim pedance

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N S E OPTIOI 1 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION • SINGLE SUPPLY: +2.7 to +36V The OPTIOI is a monolithic photodiode with on-chip

Contextual Info: MA6015S10000000 P-Ch 60V Fast Switching MOSFETs General Description Product Summery The MA6015S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: HB56UW872E Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-704A Z Rev. 1.0 Jan. 15, 1997 Description The HB56UW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The

2N2894

Abstract: 2N3209 g3105
Contextual Info: 3DE j> b 53 ? QG3i i 3^ b m 7^ . / = 7 S G S -T H 0 M S 0 N ^7#JD i@iLi01T^ 2 [M]a(gi 2N2894 2N3209 s G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case, Intended for high speed, low saturation switching