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    D0077 Price and Stock

    Microchip Technology Inc ARD00777

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    Laird Performance Material 0077001508

    EMI Gaskets, Sheets, Absorbers & Shielding L .25"xW .6"xH .22" SLMT,1F,SnSat
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    Laird Performance Material 0077001618

    EMI Gaskets, Sheets, Absorbers & Shielding 110X.320X.187X.169
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    Laird Performance Material 0077008102T00803

    .110X.280X.187X3.161IN
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    Laird Performance Material 0077007102

    EMI Gaskets, Sheets, Absorbers & Shielding NOSG,STR,BF,PSA
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    D0077 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EFM32GG295F1024-BGA120

    Abstract: EFM32GG295 EFM32GG295F512-BGA120 EFM32 PL230 EFM32G Temperature Sensors PWM output SMARTCARD ISO 7816
    Text: Preliminary .the world's most energy friendly microcontrollers EFM32GG295 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48MHz • Memory Protection Unit • Flexible Energy Management System


    Original
    PDF EFM32GG295 F1024/F512 32-bit 48MHz EFM32GG295F1024-BGA120 EFM32GG295F512-BGA120 EFM32 PL230 EFM32G Temperature Sensors PWM output SMARTCARD ISO 7816

    Untitled

    Abstract: No abstract text available
    Text: Preliminary .the world's most energy friendly microcontrollers EFM32GG295 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System


    Original
    PDF EFM32GG295 F1024/F512 32-bit EFM32GG295FXX

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Easy to use Low cost solution Higher performance than two or three op amp design Unity gain with no external resistor Optional gains with one external resistor Gain range: 2 to 1000 Wide power supply range: ±2.6 V to ±15 V Available in 8-lead PDIP and 8-lead SOIC_N packages


    Original
    PDF 70606-A AD622 AD622ANZ AD622AR AD622AR-REEL AD622AR-REEL7 AD622ARZ AD622ARZ-RL AD622ARZ-R7

    Untitled

    Abstract: No abstract text available
    Text: Preliminary .the world's most energy friendly microcontrollers EFM32GG295 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System


    Original
    PDF EFM32GG295 F1024/F512 32-bit EFM32GG295FXX

    EFM32GG295

    Abstract: AN0003
    Text: Preliminary .the world's most energy friendly microcontrollers EFM32GG295 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System


    Original
    PDF EFM32GG295 F1024/F512 32-bit EFM32GG295FXX AN0003

    Untitled

    Abstract: No abstract text available
    Text: .the world's most energy friendly microcontrollers EFM32GG295 DATASHEET F1024/F512 • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode


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    PDF EFM32GG295 F1024/F512 32-bit EFM32GG295FXX

    Untitled

    Abstract: No abstract text available
    Text: T ^ H T B T r r m t R r r E / o H 9097250 TOSHIBA Sh ï o j - D T ^ TEH7250 D007714 S DISCRETE/OPTO> SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. 10.3MAX. 0S.6±:O .Z FEATURES: • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE(sat =2.0V(Max.)


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    PDF TEH7250 D007714 2SB595.

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER DE | 4Û5545B D0077DS 3 I “ r - z s - - , ? OS Data Sheet No. PD-3.134 l l O R l INTERNATIONAL RECTIFIER S34D & S34DH SERIES 800-200 VOLTS RANGE 550 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS


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    PDF 5545B D0077DS S34DH T0-209AE O-209AD 600Vr O-118) T-25-19

    D0077

    Abstract: No abstract text available
    Text: TELEDYNE COflPONENTS 3bE D • ÔR17b02 D0077bM 7 TSC * T 'S l- M WTELEDYNE COMPONENTS CDG5341 DUAL MONOLITHIC, SPST CMOS/DMOS "T" CONFIGURATION ANALOG SWITCH FEATURES GENERAL DESCRIPTION ■ ■ Teledyne Components' CMOS/DMOS analog switches feature high-speed, low-power 5V CMOS input logic and


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    PDF R17b02 D0077bM CDG5341 D0077

    AN7320

    Abstract: panasonic tv AN7112 D0077
    Text: PANASONIC I N D L / E L E K i I C > 693-2852 PANASONIC tV 75 DE;| k13BflSS D007741 3 | I N D L , E L E C T R ON I C 72C 07741 T N IIC AN7320 A N 7320 B u S iH ^ S S S /P re -A m p lifie r C irc u it AN73201±, f i t s i l i n r ' j • • s i u # • g * * -c,


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    PDF k13BflSS D007741 AN7320 AN73201± 0DQ7743 AN7112 AN7320 panasonic tv D0077

    ELAP cm 76

    Abstract: 1232B 7174K Sanyu
    Text: SANYO SEMI CONDUCTOR CORP 32E D ? ' i ‘ï 7 0 7 b GOQflQSti. 4 a T -7 7 -2 1 C M O S 1C 1232B Autom atic M usic Selector up to 7 Selections for Tape Recorders T h e LC7517 is a sin g le-ch ip CM OS IC d esig n ed to a u to m a tic a lly s e le c t y o u r d e s ire d m u s ic u p to 7


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    PDF 1232B LC7517 MFP24 QIP48A 00077b3 IP24S MFP30 QIP80B ELAP cm 76 1232B 7174K Sanyu

    TC9405

    Abstract: TC9405I 6522 mos 1134 scr SCR GATE DRIVER Bar-Graph Display Driver LED BARGRAPH peripheral driver DISPLAY HA 1133 R DRIVER SCR
    Text: TELEDYNE 3bE » COMPONENTS • ôWbOE □Q07723 M « T S C WTELEDYNE COMPONENTS TC9405 16-BIT PARALLEL-LATCHED OUTPUT PERIPHERAL DRIVER FEATURES Saturation Voltage vs Sink Current ■ ■ ■ ■ ■ ■ ■ High Voltage


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    PDF Q07723 TC9405 16-BIT flT17bOE D00772Ö TC9405_ TC9405I 6522 mos 1134 scr SCR GATE DRIVER Bar-Graph Display Driver LED BARGRAPH peripheral driver DISPLAY HA 1133 R DRIVER SCR

    a to d converter interface with 8051

    Abstract: CS5503-AP AMV dc-dc BPL TV POWER SUPPLY circuit MCS51 CS5501 CS5503 2N7000 B15 2392 vfc
    Text: CS5501 CS5503 Semiconductor Corporation Low-Cost, 16 & 20-Bit Measurement A/D Converter Features General Description The CS5501 and CS5503 are low-cost CMOS A/D con­ verters ideal for measuring low-frequency signals representing physical, chemical, and biological proc­


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    PDF CS5501 CS5503 20-Bit CS5501: 16-Bit CS5503: 10M-W a to d converter interface with 8051 CS5503-AP AMV dc-dc BPL TV POWER SUPPLY circuit MCS51 CS5503 2N7000 B15 2392 vfc

    Untitled

    Abstract: No abstract text available
    Text: 4 8 55452 05 IN T E R N A T IO N A L R E C T I F I E R I«R dF I 4ÛSSMS5 0D077B3 fl I Data Sheet No. PD-3.088 IN TER N A TIO N A L R E C T IFIER T-25-19 S23A & S23AH SERIES 400-200 VOLTS RANGE 660 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs


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    PDF 0D077B3 T-25-19 S23AH S23A4A S23AH4A S23A2A S23A1CA D00773L. C0J300)

    zvn zetex

    Abstract: No abstract text available
    Text: bQE J> m TTTGSTö 0 0 0 7 7 B3 ZETEX N-channel enhancement­ mode vertical DMOS FET 7 Mb SEMICONDUCTORS ZVN 0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


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    PDF ZVN0120 0DD7767 7\/MH19 D0077flfl c7GS70 zvn zetex

    80C31 instruction set

    Abstract: EXIF-91h
    Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM


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    PDF DS80C320 80C32-Compatible 10X10X2 abl4130 44-PIN 2bl413G 80C31 instruction set EXIF-91h

    MSM 7627

    Abstract: GM71C16100CJ6 GM71C
    Text: G M 7 1C 1 6 1 00 C 16,777,216 WORDS x 1 BIT CMOS DYNAMIC RAM LG S e m i c o n C o .,L td . Description Features The GM71C16100C is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM71C16100C has realized higher density, higher performance and various functions by


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    PDF GM71C16100C 0DG77Dfi MSM 7627 GM71C16100CJ6 GM71C

    Untitled

    Abstract: No abstract text available
    Text: GM71V64403A GM71VS64403AL 16,777,216 w o r d s x 4 b i t I G «ternir a n P n ! fri L u o e m ic o n u o .,L t a . CMOS DYNAMIC RAM Description Pin Configuration 32 S O J /T S O P n The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits.


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    PDF GM71V64403A GM71VS64403AL GM71V 4403A/AL

    Untitled

    Abstract: No abstract text available
    Text: GM71V17803C GM71VS17803CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8RAM BIT CMOS DYNAMIC Description Features The GM71V S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various


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    PDF GM71V17803C GM71VS17803CL GM71V 17803C/CL 28pin

    ds80c320

    Abstract: 80c32
    Text: DALLAS DS80C320 High-Speed Micro s e m ic o n d u c to r FEATURES PIN A S S IG N M E N T • 80C32-Compatible • "V -/ - Pin-compatible - Standard 8051 instruction set P1.2/RXD1 3 38 =1 vcc =1 ADO =1 AD1 - Four 8—bit I/O ports P1 3/TXD1 4 37 AD2 36 AD3


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    PDF DS80C320 80C32-Compatible 16-bit 5bl4130 0Q0777A 44-PIN 00Q777T ds80c320 80c32

    Siemens F75-54

    Abstract: No abstract text available
    Text: b OE D • ^70576 N-channel enhancement mode vertical DMOS FET ZETEX 0007775 fc.7T ■ Z E T B ' SEMICONDUCTORS ZVN 0117TA FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance


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    PDF 0117TA ZVIVI0117TA ZVN0117TA Siemens F75-54

    S30EH

    Abstract: S30E4A
    Text: INTERNATIONAL RECTIFIER 02 l>E|4fl5SMSE 0D077S3 3 I" I Q R ] INTERNATioNAL r e c t if ie r 7 Daia Sheet No. PD-3.093 S30E & S30EH SERIES 400-200 VOLTS RANGE 1360 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS PART NUMBER VRFM' VDRM * tV]


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    PDF 0D077S3 S30EH S30E4A S30EH4A S30E2A S30EH2A S30E4A

    Untitled

    Abstract: No abstract text available
    Text: November 1997 PRELIMINARY ^ÉL Micro Linear ML6440 Multi-Standard 8-bit Adaptive Digital Input Comb Filter GENERAL DESCRIPTION FEATURES The ML6440 SmartComb is a single-chip, 8-bit digital comb filter that incorporates line delays and adaption algorithms for NTSC and PAL at both CCIR601 and square


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    PDF ML6440 ML6440 CCIR601 DDD77C

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • blllSM'î D D 0 7 7 H C1 lûl ■ MRN ADVANCE M IC R O N I MT4 L C2 M8 B112 2 MEG X 8 WIDE DRAM SEMICONDUCTOR INC WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES


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    PDF 048-cycle 096-cycle 400mW A0-A10;