marking yw
Abstract: 9632 transistor 9632 transistor marking 6c 95060
Text: Part Marking Information Vishay High Power Products FlipKY 0.5 A/0.75 A Part number Lot number Ball 1 location mark Y L YW Workweek Year PART NUMBER MARKING FCSP0530TR D FCSP0530ETR C FCSP05H40TR F FCSP05H40ETR E FCSP0730TR Y FCSP07H40TR W TABLE 1 W = 1 TO 26 IF PRECEDED
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FCSP0530TR
FCSP0530ETR
FCSP05H40TR
FCSP05H40ETR
FCSP0730TR
FCSP07H40TR
23-Apr-09
marking yw
9632 transistor
9632
transistor marking 6c
95060
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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marking CODE JTS
Abstract: BAS28
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
marking CODE JTS
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marking JTs
Abstract: BAS28 BAS28W
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28W,
BAS28,
marking JTs
BAS28
BAS28W
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SI5435BDC
Abstract: Si5435BDC-T1
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
18-Jul-08
Si5435BDC-T1
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Si5435BDC-T1
Abstract: SI5435BDC
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
08-Apr-05
Si5435BDC-T1
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SI5435BDC
Abstract: No abstract text available
Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code
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Si5435BDC
Si5435BDC-T1--E3
S-41887--Rev.
18-Oct-04
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SI5461EDC
Abstract: No abstract text available
Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA
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Si5461EDC
S-03083--Rev.
12-Feb-01
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Si5475DC
Abstract: S0233
Text: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX
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Si5475DC
S-02332--Rev.
23-Oct-00
S0233
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Si5465EDC
Abstract: siliconix
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5465EDC
S-03912--Rev.
21-May-01
siliconix
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Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
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Si5465EDC
S-03191--Rev.
12-Mar-01
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Untitled
Abstract: No abstract text available
Text: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code
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Si5435DC
S-00233--Rev.
21-Feb-00
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Vishay DaTE CODE 1206-8
Abstract: 1206-8 1206 8 ChipFET Si5435DC
Text: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code
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Si5435DC
S-00233--Rev.
21-Feb-00
Vishay DaTE CODE 1206-8
1206-8
1206 8 ChipFET
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S0233
Abstract: Si5449DC S-02333
Text: Si5449DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –4.3 0.135 @ VGS = –2.5 V –3.4 –30 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BH XX Lot Traceability and Date Code
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Si5449DC
S-02333--Rev.
23-Oct-00
S0233
S-02333
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1206-8
Abstract: Si5402BDC
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
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Si5402BDC
Si5402BDC-T1--E3
08-Apr-05
1206-8
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1206-8
Abstract: marking code AD Si5402BDC
Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability
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Si5402BDC
Si5402BDC-T1--E3
S-41495--Rev.
09-Jun-04
1206-8
marking code AD
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Si5461EDC
Abstract: marking code LA
Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5461EDC
S-03968--Rev.
28-May-01
marking code LA
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Si5433DC
Abstract: marking code BD
Text: Si5433DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V –6.7 0.052 @ VGS = –2.5 V –5.9 0.072 @ VGS = –1.8 V –5.0 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code
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Si5433DC
25-May-99
marking code BD
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Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
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Si5465EDC
S-02662--Rev.
04-Dec-00
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Si5447DC
Abstract: 01563
Text: Si5447DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.076 @ VGS = –4.5 V –4.8 0.110 @ VGS = –2.5 V –4.0 0.160 @ VGS = –1.8 V –3.3 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code
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Si5447DC
S-01563--Rev.
28-Jun-00
01563
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SI5402DC
Abstract: No abstract text available
Text: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code
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Si5402DC
S99267â
15-Nov-99
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Untitled
Abstract: No abstract text available
Text: SIEM ENS S ilic o n S w itc h in g D io d e A rray B A W 100 ♦ • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 o- KJ- o
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OCR Scan
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PDF
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Q62702-A376
OT-143
flE35bQ5
Q1E043Ã
aiSD43T
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Untitled
Abstract: No abstract text available
Text: BAW56 Silicon Epitaxial Planar Diode F ast sw itc h in g d u al d io d e w ith c o m m o n anode. U.fl Top View Marking JD - - □ 1-N.I 1 Top View — + ; + S3 3.4 i 6 1 — a.45*0-1 SOT-23 Plastic Package W eig h t a p p ro x . 0 .0 0 8 g
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OCR Scan
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BAW56
OT-23
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