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    D MARKING L87 Search Results

    D MARKING L87 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    D MARKING L87 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L78 marking transistor

    Abstract: L78 H complementary npn-pnp transistor NF marking code CMLT5078E CMLT5087E CMLT5088E marking l87 IC MARKING CODE TA D marking l87
    Text: CMLT5078E CMLT5087E CMLT5088E ENHANCED SPECIFICATION SURFACE MOUNT SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package


    Original     		PDF CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E OT-563 CMLT5087E CMLT5088E L78 marking transistor L78 H complementary npn-pnp transistor NF marking code marking l87 IC MARKING CODE TA D marking l87

    D marking PNP

    Abstract: CMLT5088E CMLT5078E CMLT5087E D 6 marking PNP L78 H dual NPN 100ma 50v
    Text: Central CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN TM Semiconductor Corp. ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini™ surface


    Original     		PDF CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E: CMLT5087E: CMLT5088E: OT-563 D marking PNP D 6 marking PNP L78 H dual NPN 100ma 50v

    sot 23-5 marking code fairchild

    Abstract: MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild
    Text: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge


    Original     		PDF FDV305N OT-23 sot 23-5 marking code fairchild MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild

    Untitled

    Abstract: No abstract text available
    Text: www.ti.com TS3A24159 0.3-Ω DUAL SPDT ANALOG SWITCH DUAL-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER SCDS238C – MARCH 2007 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • 2 • DGS PACKAGE TOP VIEW Specified Break-Before-Make Switching


    Original     		PDF TS3A24159 SCDS238C 000-V A114-B,

    WC SOT23-3

    Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
    Text: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*


    Original     		PDF BC817-25 BC817-40 OT-23 BC81725MTF WC SOT23-3 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    pn2222a fairchild

    Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 PZTA06 pn2222a fairchild MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor

    Untitled

    Abstract: No abstract text available
    Text: www.ti.com TS3A24159 0.3-Ω DUAL SPDT ANALOG SWITCH DUAL-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER SCDS238C – MARCH 2007 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • 2 • DGS PACKAGE TOP VIEW Specified Break-Before-Make Switching


    Original     		PDF TS3A24159 SCDS238C 000-V A114-B,

    MARKING W3 SOT23 TRANSISTOR

    Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MARKING W3 SOT23 TRANSISTOR SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23

    SOT-23 MARK 2Q

    Abstract: BF254 sot-23 transistor p2 marking
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		PDF 2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 2N5087BU SOT-23 MARK 2Q BF254 sot-23 transistor p2 marking

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild

    SOT23 component marking code KA

    Abstract: MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43
    Text: BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S Connection Diagrams: 3 3 BAT54 3 BAT54A Top Marking BAT54 = L4P BAT54A = L42 BAT54C = L43 BAT54S = L44 2 1 2 NC 1 BAT54S BAT54C 2 1 2 1 3 3 1 2 Schottky Barrier Diode Sourced from Process KA. Schottky Barrier Diode Sourced from


    Original     		PDF BAT54/A/C/S BAT54 BAT54A BAT54C BAT54S SOT23 component marking code KA MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43

    fairchild sot-23 bav70

    Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
    Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BAV70 BAV74 OT-23 BAV70 BAV99 fairchild sot-23 bav70 sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV74 sot-23 MARKING CODE A4

    MARKING W2 SOT23

    Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
    Text: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 4148CC OT-23 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE 4148SE 4148CA MMBD1201-1205 MARKING W2 SOT23 diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE

    BAR43/D95

    Abstract: MARKING W2 SOT23 da5 diode "MARKING CODE" LA sot-23 fairchild marking codes sot-23 marking db2 bar43c A0 SOT-23 BAR43 BAR43A BAR43S
    Text: BAR43/A/C/S BAR43/A/C/S Connection Diagrams: 3 3 3 BAR43 BAR43A Top Marking: 2 1 BAR43 BAR43A BAR43C BAR43S = D95 = DB2 = DB1 = DA5 2 NC 1 3 3 BAR43S BAR43C 1 2 1 1 2 2 Schottky Barrier Diode Sourced from Process KA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BAR43/A/C/S BAR43 BAR43A BAR43C BAR43S BAR43/D95 MARKING W2 SOT23 da5 diode "MARKING CODE" LA sot-23 fairchild marking codes sot-23 marking db2 bar43c A0 SOT-23 BAR43 BAR43A BAR43S

    marking l30

    Abstract: 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23
    Text: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current


    Original     		PDF BAV23S marking l30 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23

    transistor 1201 1203 1205

    Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
    Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1201 MMBD1204A MMBD1203 MMBD1205A transistor 1201 1203 1205 wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking

    MMBD1503

    Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
    Text: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.


    Original     		PDF OT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MMBD1501A MMBD1503A MMBD1504A MMBD1505A MMBD1503 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720

    sot-23 marking code sf

    Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
    Text: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.


    Original     		PDF OT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A sot-23 marking code sf Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1

    part MARKING k48

    Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
    Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E


    OCR Scan     		PDF CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


    OCR Scan     		PDF 2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S

    L78 H

    Abstract: No abstract text available
    Text: Centrai CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package with enhanced specifications


    OCR Scan     		PDF CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E: CMLT5087E: CMLT5088E: OT-563 L78 H

    "dual TRANSISTORs"

    Abstract: No abstract text available
    Text: Central" CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini™ surface


    OCR Scan     		PDF CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E: CMLT5087E: CMLT5088E: OT-563 "dual TRANSISTORs"

    Untitled

    Abstract: No abstract text available
    Text: 13 CKT SIZE 4 5 12 DIM A .709 .4 9 6 I2.60 .8 74 .66 I (22.20) ( I6.80 ) (26.40) 1.2 0 5 7 (3 0 . 6 0 ) 1.3 7 0 8 (34.80) L 535 9 (3 9 . 0 0 ) I0 I \2 B ( I8 .0 0 ) 1.0 3 9 6 DIM 10 1.7 0 I (43.20) 1.8 6 6 (47.40) NOTES: 1. MATERIALS: HOUSING: T = NYLON 6 /6 , U L 9 4 V - 2, COLOR: NA TUR AL


    OCR Scan     		PDF