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    D 998 TRANSISTOR Search Results

    D 998 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 998 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMX998Q1

    Abstract: CMX998 tetra modulation block diagram cmx998 cmx981 d998
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/9 February 2009 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		PDF CMX998 D/998/9 CMX981 CMX980A 100MHz 148dBc/Hz CMX998Q1 CMX998Q1 CMX998 tetra modulation block diagram cmx998 cmx981 d998

    CMX998

    Abstract: 4 QAM modem CMX998Q1 d 998 CMx7164 PLC circuit with OFDM CMX998 Calibration
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/12 February 2013 Features • Frequency Range 30MHz to 1GHz  Wide Band Noise –148dBc/Hz  C-BUS SPI compatible Serial Interface  Gain Control  Error Amplifier


    Original     		PDF CMX998 D/998/12 CMX981, CMX980A CMX7163/CMX7164 30MHz 148dBc/Hz CMX998Q1 CMX998 4 QAM modem CMX998Q1 d 998 CMx7164 PLC circuit with OFDM CMX998 Calibration

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS D/998/6 July 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier • Up Converter Forward Path


    Original     		PDF CMX998 D/998/6 100MHz 148dBc/Hz CMX998Q1

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/11 September 2010 Features • Frequency Range 30MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		PDF CMX998 D/998/11 30MHz 148dBc/Hz CMX998Q1

    CMX998

    Abstract: 2D998
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/7 October 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		PDF CMX998 D/998/7 100MHz 148dBc/Hz CMX998Q1 CMX998 2D998

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/8 January 2008 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		PDF CMX998 D/998/8 100MHz 148dBc/Hz CMX998Q1

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


    Original     		PDF Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR

    BF998

    Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
    Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129


    Original     		PDF Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


    OCR Scan     		PDF BB515 p270k2 transistor Bs 998

    1734D

    Abstract: RCA-TIP120
    Text: G E SOLID STATE 3875081 G E DÏ SOLID m T | 3 A 7S DA 1 D017336 Ô |~~ 01É STATE 1733 " ' 'V' 1 3 D Darlington Power Transistors_ TIP120, TIP121, TIP122 File Number 998 8-Ampere N-P-N Darlington Power Transistors * 60, 80, and 100 Volts, 65 Watts


    OCR Scan     		PDF D017336 TIP120, TIP121, TIP122 TQ-220AB RCA-TIP120, TIP121 TIP122 1734D RCA-TIP120

    Untitled

    Abstract: No abstract text available
    Text: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda


    OCR Scan     		PDF 23b350 62702-F1129 E3b32Q

    494 ic

    Abstract: altera board
    Text: Operating Requirements for Altera Devices J a n u a r y 1 998, ver. introduction D a ta S h e e t Altera devices combine unique programmable logic architectures with advanced CMOS processes to provide exceptional performance and reliability. To maintain the highest possible performance and reliability of


    OCR Scan     		PDF

    TIPI20

    Abstract: No abstract text available
    Text: File Number TIP120, TIP121, TIP122 998 8-Ampere N-P-N Darlington Power Transistors 60, 80, and 100 Volts, 65 Watts Gain of 1000 at 0.5 A Gain of 1000 at 3 A T E R M IN A L D E S IG N A T IO N S o Features: • Operates from 1C without predriver ■ Low leakage at high temperature


    OCR Scan     		PDF TIP120, TIP121, TIP122 -220A TIP121 TIP122 driven121. 92CS-2I9T« T/P122. TIPI20

    2SC998

    Abstract: 2sc998 transistor 10N40 0F34 Toshiba 2SC998
    Text: 5; ' J D y N P N I t i 5 > * = y J , U 7 L s - ï B h 5 y S ; Z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR O 1 5 0 ~ 1 7 5MHz * 2 s c 998 ) o VHF Power Amplifier Application (Low Supply a f i l i é INDUSTRIAL APPLICATIONS Vo 11age Use) ° Un it: mm Land-Mobile Power Amplifier and Frequency


    OCR Scan     		PDF 2SC998 0t-10( 0f-34( 2SC998 2sc998 transistor 10N40 0F34 Toshiba 2SC998

    Untitled

    Abstract: No abstract text available
    Text: Datasheet February 1 998 m I C f 0 8 I C t f 0 111€ S g r O U p Lucent Technologies Bell Labs Innovations 1 4 1 0 - T y p e a n d 1 4 3 0 - T y p e T r a n s c e i v e r s wi t h C l o c k R e c o v e r y a n d D a t a R e t i m i n g for T e l e c o m m u n i c a t i o n s A p p l i c a t i o n s


    OCR Scan     		PDF 20-pin OC-12 1410G3A 1430G3B 1430H3B

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998


    OCR Scan     		PDF 62702-F1129 TheT07304 fi235bQ5 D1E174E Q1517M3

    d 998 transistor circuit

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998


    OCR Scan     		PDF Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit

    TRANSISTOR BH RW

    Abstract: No abstract text available
    Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape


    OCR Scan     		PDF 62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW

    VPT09050

    Abstract: VPT09051
    Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A


    OCR Scan     		PDF SPUX5N60S5 SPDX5N60S5 VPT09051 VPT09050 X5N60S5 P-T0251-3-1 P-T0252 VPT09050 VPT09051