Untitled
Abstract: No abstract text available
Text: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D20120D
O-247-3
C4D20120D
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C4D10120
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D10120D
O-247-3
O-24planted
C4D10120A
C4D10120
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/503E
MIL-PRF-19500/503D
1N6073
1N6081,
MIL-PRF-19500.
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IRLMS6803
Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance
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IRLMS1503PbF
leadframe01
EIA-481
EIA-541.
IRLMS6803
IRLMS1902
IRLMS2002
IRLMS4502
IRLMS5703
IRLMS6702
58AV
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IRLMS6803
Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802 6x marking sot-23 p-channel
Text: PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D D 1 6 D 2 5 D G 3 4 S VDSS = -20V RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier
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IRLMS6802PbF
OT-23.
EIA-481
EIA-541.
IRLMS6803
IRLMS1503
IRLMS1902
IRLMS5703
IRLMS6702
IRLMS6802
6x marking sot-23 p-channel
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IRLMS6803
Abstract: EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet
Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
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IRLMS1902PbF
EIA-481
EIA-541.
IRLMS6803
EIA-541
IRLMS1503
IRLMS2002
mosfet 4502
5703 mosfet
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1n6831
Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Text: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments
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MIL-PRF-19500/670
1N6826,
1N6826US,
1N6831
1N6831US
MIL-PRF-19500,
1N6826US
1N6826
MIL-PRF19500
1N6831US
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IRFz48N MOSFET
Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFz48N MOSFET
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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B1370
Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
B1370
R B1370
IRFz44n equivalent
MOSFET IRFZ44N
for irfz44n
IRF1010 MOSFET TO-220
IRFIZ44N
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IRFIZ44N equivalent
Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
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IRFIZ44N
IRFIZ44N equivalent
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
IRFz44n equivalent
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IRFIZ48N
Abstract: IRF1010 IRFI840G IRFZ48N
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFIZ48N
IRF1010
IRFI840G
IRFZ48N
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IRFz44n equivalent
Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840
Text: PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.024Ω G ID = 28A S Description
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IRFIZ44N
O-220
IRFz44n equivalent
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
12v input 55v output using irfz44n circuit
IRFZ44
IRFIZ44N equivalent
irfi840
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IRFz44n equivalent
Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
IRFz44n equivalent
datasheet of irfz44n
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
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SHARP IR3
Abstract: 1N5186 1N5187 1N5188 1N5190
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2007. INCH-POUND MIL-PRF-19500/424B 18 October 2006 SUPERSEDING MIL-S-19500/424A 29 May 1995 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/424B
MIL-S-19500/424A
1N5186,
1N5187,
1N5188,
1N5190,
MIL-PRF-19500/411
MIL-PRF-19500.
SHARP IR3
1N5186
1N5187
1N5188
1N5190
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IRFI840G
Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Text: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω
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1306B
IRFIZ46N
O-220
IRFI840G
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
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marking 34A
Abstract: IRFI840G IRL3103 IRLI3103
Text: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description
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IRLI3103
O-220
marking 34A
IRFI840G
IRL3103
IRLI3103
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QD41
Abstract: BYX97-300
Text: BYX97 SERIES M A INTENANCE TYPE iILIPS INTERNATIONAL T> SbE I 7I10a5b DD41bSfi bll BIPHIN T -O l~ t RECTIFIER DIODES Also available to B S 9331-F130 Silicon rectifier diodes in metal envelopes similar to DO -5, intended fo r use in power rectifier applications.
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BYX97
7I10a5b
DD41bSfi
9331-F130
1600R
BYX97
711005bi_
711D0Eb
QD41
BYX97-300
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sk832
Abstract: SK821 SK841 SK993 SK3110 SK9975 SK952 SK9105 sk9154 SK9709
Text: THOnSON/ DISTRIBUTOR SñE D • T02t,ñ73 Q D O M T O 1! 3T4 ■ TCSK Diode Arrays Maxim um Ratings R epetitive Forw ard C urrent Peak Reverse TCE Type M a terial Voltage A verage Vr h m lo A V SK3110 SK7332 35 6000 Se Si Forw ard Voltage Reverse Outline D rop, DC
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SK3110
SK7332
100mA
R-021
R-069
SK10180
R-117
SK10181
SK10182
sk832
SK821
SK841
SK993
SK9975
SK952
SK9105
sk9154
SK9709
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irf2807 equivalent
Abstract: No abstract text available
Text: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1
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IRFI2807
T0-220
irf2807 equivalent
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0050II
Abstract: MO-15 72RD mosfet ir 840
Text: PD -91848B International Rectifier IHR IRLMS6802 HEXFET Power MOSFET • • • • Ultra Low On-Resistance P-Channel M O SFET Surface Mount Available in Tape & Reel dŒ V d s s = -2 0 V -Ds RDS on = 0.050ÎÎ T op V ie w Description These P-Channel MOSFETs from International Rectifier
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-91848B
IRLMS6802
OT-23.
0050II
MO-15
72RD
mosfet ir 840
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2D 1002 diode
Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Text: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier
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OT-23.
EIA-S41.
2D 1002 diode
SMD MARKING CODE 9b 2b
smd diode marking LM
smd 2d 1002 -reel
S57C3
sot-23 Marking 3D
Switching Diode SOT23 Marking 3D
smd 2d 1002
S1902
diode Marking Code lm
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Untitled
Abstract: No abstract text available
Text: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature
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IRFI1310G
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bc 331
Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
Text: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier
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PD-93759
IRLMS4502
OT-23.
EIA-481
EIA-541.
bc 331
mosfet ir 840
irlms4502
P 838 X MOSFET
diode marking code YF
IRLMS5703
IRLMS6702
Micro6 Package
marking JB diode
D 042 silicon rectifier diode
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