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    CYK256K16SCCBU Search Results

    CYK256K16SCCBU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CYK256K16SCCBU-55BVI Cypress Semiconductor 4-Mbit (256K x 16) Pseudo Static RAM Original PDF
    CYK256K16SCCBU-60BVI Cypress Semiconductor 4-Mbit (256K x 16) Pseudo Static RAM Original PDF
    CYK256K16SCCBU-70BVI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device


    Original     		PDF CYK256K16SCCB CYK256K16SCCB CYK256K16SCCBU

    CYK256K16SCCB

    Abstract: No abstract text available
    Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low-power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device


    Original     		PDF CYK256K16SCCB CYK256K16SCCB I/O15) CYK256K16SCCBU 60-ns

    CYK256K16SCCB

    Abstract: No abstract text available
    Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins


    Original     		PDF CYK256K16SCCB I/O15) CYK256K16SCsection CYK256K16SCCB CYK256K16SCCBU 60-ns

    CYK256K16SCCB

    Abstract: No abstract text available
    Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins


    Original     		PDF CYK256K16SCCB I/O15) CYK256K16SCackage CYK256K16SCCB CYK256K16SCCBU 60-ns

    BGA 48 "8 x 8" memory

    Abstract: No abstract text available
    Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins


    Original     		PDF CYK256K16SCCB I/O15) CYK256K16SCCB CYK256K16SCCBU 60-ns BGA 48 "8 x 8" memory

    Untitled

    Abstract: No abstract text available
    Text: CYK256K16SCCB PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features • Advanced low power MoBL architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.3V • Typical active current: 3 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected


    Original     		PDF CYK256K16SCCB I/O15) CYK256K16SCCBU