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    Rochester Electronics LLC CY7C194BN-15VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    Rochester Electronics LLC CY7C194BN-25VC

    IC SRAM 256KBIT PARALLEL 24SOJ
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    Rochester Electronics LLC CY7C194BN-15PC

    IC SRAM 256KBIT PARALLEL 24DIP
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    Infineon Technologies AG CY7C194BN-15VC

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    CY7C194BN Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C194BN Cypress Semiconductor 256 Kb (64K x 4) Static RAM Original PDF
    CY7C194BN-15PC Cypress Semiconductor 256 Kb (64K x 4) Static RAM Original PDF
    CY7C194BN-15PC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 256KBIT 15NS 24DIP Original PDF
    CY7C194BN-15VC Cypress Semiconductor 256 Kb (64K x 4) Static RAM Original PDF
    CY7C194BN-15VC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 256KBIT 15NS 24SOJ Original PDF
    CY7C194BN-15VCT Cypress Semiconductor 256 Kb (64K x 4) Static RAM; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; Original PDF
    CY7C194BN-25VC Cypress Semiconductor 256 Kb (64K x 4) Static RAM Original PDF

    CY7C194BN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.


    Original     		PDF CY7C194BN CY7C194BN AN1064,

    MMA6

    Abstract: MO088
    Text: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.


    Original     		PDF CY7C194BN CY7C194BN MMA6 MO088

    Untitled

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic


    Original     		PDF CY7C194BN CY7C194BN 24-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs


    Original     		PDF CY7C194BN CY7C194BN AN1064,

    A1491-6

    Abstract: CY7C194BN CY7C194BN-15PC CY7C194BN-15VC CY7C194BN-25VC
    Text: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.


    Original     		PDF CY7C194BN CY7C194BN A1491-6 CY7C194BN-15PC CY7C194BN-15VC CY7C194BN-25VC

    cypress AN1064 sram system guidelines

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power


    Original     		PDF CY7C194BN CY7C194BN 24-pin cypress AN1064 sram system guidelines

    cypress AN1064 sram system guidelines

    Abstract: No abstract text available
    Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.


    Original     		PDF CY7C194BN CY7C194BN AN1064, cypress AN1064 sram system guidelines