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    CY7C1176V18, Search Results

    CY7C1176V18, Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1176V18 Cypress Semiconductor 18-Mbit QDR-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Original PDF

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    Text: CY7C1176V18 CY7C1163V18 CY7C1165V18 PRELIMINARY 18-Mbit QDR -II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300 MHz to 400 MHz clock for high bandwidth


    Original
    PDF CY7C1176V18 CY7C1163V18 CY7C1165V18 18-Mbit CY7C1176V18/CY7C1163V18/CY7C1165V18 CY7C1176BV18