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    CY7C1021V Price and Stock

    Rochester Electronics LLC CY7C1021V33-12ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021V33-12ZC Bulk 84
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    Rochester Electronics LLC CY7C1021V33-15VC

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021V33-15VC Bulk 52
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    Rochester Electronics LLC CY7C1021V33-12VC

    IC SRAM 1MBIT PARALLEL 44SOJ
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    DigiKey CY7C1021V33-12VC Bulk 93
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    Rochester Electronics LLC CY7C1021V33-15BAI

    IC SRAM 1MBIT PARALLEL 48FBGA
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    DigiKey CY7C1021V33-15BAI Bulk 54
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    Rochester Electronics LLC CY7C1021V33-15ZIT

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1021V33-15ZIT Bulk 77
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    Find more CY7C1021V price and stock on Findchips.com

    CY7C1021V Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1021V Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V30 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V30-15BSI Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY7C1021V30L-15BSI Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY7C1021V33-10VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-10ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12BAI Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12VCT Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12VI Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-12ZCT Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-15BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-15BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-15BAI Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021V33-15VC Cypress Semiconductor 64K x 16 Static RAM Original PDF

    CY7C1021V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C1021V30

    Abstract: CY7C1021V30-15BSI
    Text: fax id: 1083 1CY 7C10 21 V ADVANCED INFORMATION CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version)


    Original     		CY7C1021V30 CY7C1021V30 CY7C1021V30-15BSI PDF

    CY7C1021V33-15VI

    Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI
    Text: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		CY7C1021V I/O16) CY7C1021V33-15VI 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI PDF

    CY7C1021V33-12ZC

    Abstract: cy7c1021v33-15zi CY7C1021V33-10VC CY7C1021V CY7C1021V33-10ZC
    Text: fax id: 1077 1CY 7C10 21 V PRELIMINARY CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is


    Original     		CY7C1021V I/O16) CY7C1021V33-12ZC cy7c1021v33-15zi CY7C1021V33-10VC CY7C1021V CY7C1021V33-10ZC PDF

    CY7C1021V

    Abstract: No abstract text available
    Text: 021V CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.)


    Original     		CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.65 mW (max.) • Automatic power-down when deselected


    Original     		CY7C1021V30 48-ball I/O16) PDF

    CY7C1021V33

    Abstract: Mil-Std-883 Wire Bond Pull Method 2011 JESD22
    Text: Cypress Semiconductor Qualification Report QTP# 97211, VERSION 1.1 October, 1997 1 Meg SRAM, R42D Technology, Fab 4 Qualification CY7C1021V33 64K x 16 Static RAM Cypress Semiconductor 1 Meg SRAM, R42 Technology, Fab 4 Devices:CY7C1021V33 Package: SOJ QTP# 97211, V1.1


    Original     		CY7C1021V33 44-pin, CY7C1021V33-VC 30C/60 CY7C1021V33 Mil-Std-883 Wire Bond Pull Method 2011 JESD22 PDF

    CEL9200

    Abstract: CY7C1019 CY7C1021 CY7C1021V sumitomo silver epoxy
    Text: Cypress Semiconductor Qualification Report QTP# 97416 VERSION 1.0 June, 1998 1 Meg SRAM, R42D Technology, Fab 4 Qualification CY7C1021V 64K x 16 Static RAM CY7C1019V 128K x 8 Static RAM Cypress Semiconductor, Inc. 1 Meg SRAM - R42D Technology - Fab 4 Device: CY7C1021V/CY7C1019V 7C1321D/7C1319D


    Original     		CY7C1021V CY7C1019V CY7C1021V/CY7C1019V 7C1321D/7C1319D) 44-pin CY7C1021) 32-pin CY7C1019) CEL9200 CY7C1019 CY7C1021 CY7C1021V sumitomo silver epoxy PDF

    CY7C1021V30

    Abstract: No abstract text available
    Text: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.08 mW (max.)


    Original     		CY7C1021V30 CY7C1021V30 PDF

    CY7C1021V

    Abstract: No abstract text available
    Text: CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected


    Original     		CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V PDF

    CY7C1021V33

    Abstract: A194 JESD22
    Text: Cypress Semiconductor Qualification Report QTP# 97099 VERSION 1.0 September, 1997 64K x 16 Asynchronous Static RAM, 3.3V Operation CY7C1021V33 Cypress Semiconductor 64K x 16 Static RAM, 3.3V Operation Device:CY7C1021V33 Package: 44-pin, 400-mil SOJ QTP# 97099, V. 1.0


    Original     		CY7C1021V33 44-pin, 400-mil CY7C1021V33-VC 619703242L1A CY7C1021V33 A194 JESD22 PDF

    toshiba tc 97101

    Abstract: tc 97101 M7401 M73049 "256K x 16" SRAM PLCC M73002 M7206 M7-300 M72016 T 9722
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 3, 1997 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft QA Engineering Department Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT


    Original     		CY74FCT163952TP CY7C341-25JI FAMOS-P20 CY7C374I-JC M72048 FLASH-FL28D toshiba tc 97101 tc 97101 M7401 M73049 "256K x 16" SRAM PLCC M73002 M7206 M7-300 M72016 T 9722 PDF

    mother board lcd tv block diagram

    Abstract: KDS8L HC49SUB C0805 100nf 74HCT74T ic 293D c9 sot353 32KHZ768 W17 sot23 rca IC12
    Text: APPLICATION NOTE Digital Still Camera Evaluation Kit SAA812X <AN00061> Philips Semiconductors TP97036.2/W97 TRAD Philips Semiconductors Application Note <AN00061> Abstract Philips semiconductors has developed boards to demonstrate the possibilities of the SAA812X


    Original     		SAA812X AN00061> TP97036 2/W97 SAA812X mother board lcd tv block diagram KDS8L HC49SUB C0805 100nf 74HCT74T ic 293D c9 sot353 32KHZ768 W17 sot23 rca IC12 PDF

    M7401

    Abstract: m74010 m7402 M74050 M74040 M74064 m80129 hyundai 9750 9745-1 VIC068A cy7c199zi
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 1998 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft Reliability Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT


    Original     		CY7C1334-AC M7401 m74010 m7402 M74050 M74040 M74064 m80129 hyundai 9750 9745-1 VIC068A cy7c199zi PDF

    M72010

    Abstract: M74007 m7401 M74030 M7402 PALCE22V10D m7403 M74043 M74094 CY7C1599-VC
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 4, 1997 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft QA Engineering Department Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT


    Original     		H375I-UMB CY7C374I-JC M73058 FLASH-FL28D CY7C341-JI M74079 FAMOS-P20 M72010 M74007 m7401 M74030 M7402 PALCE22V10D m7403 M74043 M74094 CY7C1599-VC PDF

    CY7C1021V30

    Abstract: CY7C1021V30-15BAI
    Text: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0


    OCR Scan     		CY7C1021V30 48-ball CY7C1021V30 CY7C1021V30-15BAI PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		CY7C1021V30 PDF

    A13L

    Abstract: A15C CY7C1021V CY7C1021V33L-1OVC CY7C1021V33-10ZC C07S
    Text: CY7C1021V CYPRESS_ 64K x 16 Static RAM Features W riting to the device is a c c o m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/O g ), is w ritten into the location spe cifie d on th e address pins (A0


    OCR Scan     		CY7C1021V 44-pin 400-mil 48-Ball A13L A15C CY7C1021V33L-1OVC CY7C1021V33-10ZC C07S PDF

    A13L

    Abstract: CY7C1021V
    Text: CY7C1021V V CYPRESS 64K x 16 Static RAM Features W riting to th e device is a c c o m plished by takin g chip ena b le CE and w rite enable (W E) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i throu gh l/O g ), is w ritten into the location sp e cified on the address pins (A0


    OCR Scan     		CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V A13L PDF

    30PFL

    Abstract: No abstract text available
    Text: fax id: 1077 CY7C1021V 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		CY7C1021V 44-pin 400-mil 30PFL PDF

    b548

    Abstract: CY7C1021V30 CY7C1021V30-15BSI CY7C1021V30L-15BSI
    Text: fax id: 1083 ADVANCED INFORMATION ^;aaazgg s t CY7C1021V30 ; U I F lm ß b ö 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/0 8), is


    OCR Scan     		CY7C1021V30 CY7C1021V30 b548 CY7C1021V30-15BSI CY7C1021V30L-15BSI PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1077 PRELIMINARY CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		CY7C1021V PDF

    CD Z44

    Abstract: 3312B
    Text: CY7C1021V CYPRESS 64K x 16 Static RAM Features W riting to th e device is a c c o m plished by ta kin g chip ena b le CE and w rite enable (W E) inputs LOW. If byte low enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/O g ), is w ritten into the location sp e c ified on the address pins (A0


    OCR Scan     		44-pin 400-mil 48-Ball CY7C1021V CD Z44 3312B PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq


    OCR Scan     		CY7C1021V30 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C Y 7 C 1 0 2 1 V 3 0 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		PDF