Untitled
Abstract: No abstract text available
Text: REV. NC DATE DESCRIPTION 0 6 /3 0 /0 4 IN IT IA L RELEASE •1-30 [,Û51]±0.12 UNLESS ÛHERVfâE SPEARED DHBMBN5 WE H KILUMETBO. DIUEN3DN3 IN [ ] M E M »OCX At E> rm CUSTOCK Re n RANCI [MUT. A P PR O V A LS G.R.S. 08/30/04 D«5 - flm m ± Q,20mm 8 - 30Pflm ± 0 ,40m rn
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30Pflm
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Untitled
Abstract: No abstract text available
Text: ICS9147-06 Integrate Circuit Systems, Ine Frequency Generator & Integrated Buffers for PENTIUM General Description Feature The IC S9147-06 generates all clocks required for high speed RISC or CISC microprocessor systems such as Intel PentiumPro. Two different reference frequency multiplying
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ICS9147-06
S9147-06
250ps
wi016
ICS9147F-06
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Untitled
Abstract: No abstract text available
Text: ICS9158 Integrated Circuit Systems, Inc. Integrated Buffer and Motherboard Frequency Generator General Description Features The ICS9158 is a low cost frequency generator designed specifically for desktop and notebook PC applications. Eight high drive, skew-controlled copies of the CPU clock are avail
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ICS9158
ICS9158
250ps
AAN04
4fi257Sfi
0QD1341
ICS9158-01N
ICS9158-01M
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A10C
Abstract: CY7C170 C1702 7C170 SA78
Text: 4bE » n QDGbSS3 b • ICYP 256^2 CY7C170 *»■> sÆ CYPRESS _ g SEMICONDUCTOR 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • H ighspeed The CY7C170 is a high-performance CMOS static RAM organized as 4096
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CY7C170
CY7C170
CY7C170-25VC
CY7C170-35PC
CY7C170-35DC
CY7C170-35VC
CY7C170-35DMB
CY7C170-45PC
CY7C170-45DC
CY7C170-45VC
A10C
C1702
7C170
SA78
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Untitled
Abstract: No abstract text available
Text: C Y7C 1512 64K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Features • High speed — tAA = 1 5 ns • CMOS for optimum speed/power • Low active power
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CY7C1512
32-Lead
32-Lead
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Untitled
Abstract: No abstract text available
Text: CY7C1021 P Yi. PX :V«*1 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through I/0 1 6) is written into the location speci
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CY7C1021
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NPN Transistor PT7
Abstract: ITT K12 series switch T flip flop IC UTM RESISTOR 214 24 volt 6 amp power supply chips kaa x5 amd k10 Toggle flip flop IC P144 resistor 10 kohm
Text: MAE D C I SEMICONDUCTOR • 3 0 H 0 7b 7 00000=15 Û00 W E C I S DESIGN SUPPORT The senior designers at ECI are within easy reach to support you and your program. . To begin the process just deliver your schematic and input-output -requirements to ECI. We will design a chip to
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0G00113
T-42-1?
NPN Transistor PT7
ITT K12 series switch
T flip flop IC
UTM RESISTOR 214
24 volt 6 amp power supply chips
kaa x5
amd k10
Toggle flip flop IC
P144
resistor 10 kohm
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Untitled
Abstract: No abstract text available
Text: X25097 8K e n 1024 x8 Bit 5MHz Low Power SPI Serial E2PROM with IDLock Memory FEATURES DESCRIPTION • 5MHz Clock Rate • IDLock™ Memory — IDLock First or Last Page, any 1/4 or Lower 1/2
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X25097
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Untitled
Abstract: No abstract text available
Text: fax id: 1075 CY7C1020V _ 3 2 K x 16 Static RAM BLE is LOW, then data from I/O pins (l/O-j through l/0 8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (l/0 9 through l/O i6) is written into the location speci
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CY7C1020V
44-pin
400-mil
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7C1021-10
Abstract: No abstract text available
Text: CY7C1021 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/Os), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 16) is written into the location speci
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CY7C1021
44-pin
400-mil
7C1021-10
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Untitled
Abstract: No abstract text available
Text: fax id: 1083 C Y 7 C 1 0 2 1 V 3 0 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0
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Untitled
Abstract: No abstract text available
Text: TOS H IB A UC/UP L4E D • DDEbüflQ T7b « T O S B DISPLAY CONTROLLER II TC8506M Color Look Up Table with DAC 1. GENERAL DESCRIPTION TC850SM is an 1 chip C-MOS LSI for Look up Table (Color Pallet) in color display, built in 4 bit Video D/A converter for RGB output, capable of displaying 4096
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TC8506M
TC850SM
40MHz.
TC8506M-11
I724C
OP28-P-45Q
TC8506M-12
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BYBP
Abstract: T11-L 4392a 7C43
Text: p yXpX : v « *1 CY7C439 - Bidirectional 2K x 9 FIFO Features • • • • • • • • • 2048 x 9 FIFO buffer memory Bidirectional operation High-speed 28.5-MHz asynchronous reads and w rites Simple control interface Registered and transparent bypass modes
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CY7C439
300-mil
CY7C439,
BYBP
T11-L
4392a
7C43
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7C460-40
Abstract: No abstract text available
Text: CY7C460 CY7C462 CY7C464 Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32K x 9 FIFO Features ories. Each FIFO memory is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overrun and underrun.
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CY7C460
CY7C462
CY7C464
CY7C460)
CY76C462)
CY7C464)
600-mil
IDT7205,
IDT7206
7C460-40
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1A8CN
Abstract: No abstract text available
Text: fax id: 1074 CY7C1020 3 2 K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0-|6) is written into the location speci
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CY7C1020
1A8CN
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30PFL
Abstract: No abstract text available
Text: fax id: 1077 CY7C1021V 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0
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CY7C1021V
44-pin
400-mil
30PFL
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WECO* 1502
Abstract: No abstract text available
Text: p yXpX : v « *1 CY7C150 - 1Kx4 Static RAM Features • Memory reset function • 1024 x 4 static RAM for control store in high-speed com puters • CMOS for optimum speed/power • High speed — 10 ns commercial — 12 ns (military) • Low power — 495 mW (commercial)
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CY7C150
WECO* 1502
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ah 471k capacitor
Abstract: FB F251 JY 222 M capacitor RPU05 RQC09 RQC05 101 Ceramic Disc Capacitors RPU08 RQC08 30-JRT
Text: H 15 "b "7 ^ "j 0 3 > x > I f ¡5 *Class2s • Class3 CERA M IC DISC CA PA CITO R (HIGH DIELECTRIC CONSTANT TYPE • CLASS 2, SEMICONDUCTING CERAMIC TYPE • CLASS 3) O PERATING TEM P. -25°C~+85"C <Class2> • Large capacitance values relative to size • High withstand voltage
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SrTi03)
ah 471k capacitor
FB F251
JY 222 M capacitor
RPU05
RQC09
RQC05
101 Ceramic Disc Capacitors
RPU08
RQC08
30-JRT
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HD10
Abstract: No abstract text available
Text: :c s r^YPPF.^c; 1- . r SEMICONDUCTOR CYM4210 CYM4220 .— Cascadeable 8K x 9 FIFO Cascadeable 16K x 9 FIFO Features Functional Description • 8K x 9 FIFO buffer memory 4210 o r 16K x 9 FIFO buffer memory (4220) • Asynchronous read/write • High-speed 25-MHz read/write
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CYM4210
CYM4220
25-MHz
7C42X
600-mil
600-mil-wide
HD10
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Untitled
Abstract: No abstract text available
Text: T . , . Integrated ICS9158 Circuit Systems, Inc. Integrated Buffer and Motherboard Frequency Generator General Description Features The ICS9158 is a low cost frequency generator designed specifically for desktop and notebook PC applications. Eight high drive, skew-controlled copies of the CPU clock are avail
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ICS9158
ICS9158
250ps.
AAN04
ICS9158-01N
ICS9158-01M
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Untitled
Abstract: No abstract text available
Text: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power
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CY7C171A
CY7C172A
7C171A)
7C172A
7C171A
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Untitled
Abstract: No abstract text available
Text: CYM4210 CYM4220 C Y P R F .^ Cascadeable 8 K x9 FI F O Cascadeable 16K x 9 FIFO SEMICONDUCTOR Features Functional Description • 8K x 9 FIFO buffer memory 4210 or 16Kx 9 FIFO buffer memory (4220) • Asynchronous read/write • High-speed 25-MHz read/write
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CYM4210
CYM4220
25-MHz
7C42X
CYM4210
CYM4220
600-milwide
CYM4210HD
4220H
CYM4210HD
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Untitled
Abstract: No abstract text available
Text: F 5 M28F411 . 4 Mbit 512Kb x8, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ ■ ■ ■ 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware
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M28F411
512Kb
28F411
TSOP40
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CA106
Abstract: No abstract text available
Text: U S ^ > x > Ht US CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C rn —/ w av i 'w e # » * * * » 1 0 6 ® *5 <£ t>*14 6 ® i f & U . 1 0 6 ® l i l i t 7 'f > 7 7 7 ' Available in two shapes: 106 and 146. insulated type is available in the 106 type. ¿*3
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