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    CY7C102 Price and Stock

    Flip Electronics CY7C1021DV33-10ZSXI

    STANDARD SRAM, 64KX16, 10NS, CMO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1021DV33-10ZSXI Bulk 83,450 300
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    • 1000 $1.77
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    Flip Electronics CY7C1020D-10ZSXI

    IC SRAM 512KBIT PAR 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1020D-10ZSXI Tray 16,983 150
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    • 100 -
    • 1000 $3.78
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    Flip Electronics CY7C1021BN-15ZSXE

    STANDARD SRAM, 64KX16, 15NS, CMO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1021BN-15ZSXE Tray 10,738 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.03
    • 10000 $3.03
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    Flip Electronics CY7C1021DV33-10ZSXA

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1021DV33-10ZSXA Tray 6,980 300
    • 1 -
    • 10 -
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    • 1000 $1.92
    • 10000 $1.92
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    Flip Electronics CY7C1021BNV33L-15ZXI

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1021BNV33L-15ZXI Tray 6,183 200
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    • 1000 $2.64
    • 10000 $2.64
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    CY7C102 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1020 Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020 Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 static RAM, 10ns Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 static RAM, 10ns Original PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 static RAM, 12ns Original PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 static RAM, 12ns Original PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 static RAM, 15ns Original PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 static RAM, 15ns Original PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    ...

    CY7C102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1022

    Abstract: No abstract text available
    Text: Y7C10 PRELIMINARY CY7C1022 32K x 16 Static RAM Features • 5.0V operation ± 10% • High speed — tAA = 12 ns • Low active power — 825 mW (max., 10 ns, “L” version) • Very Low standby power — 500 µW (max., “L” version) • Automatic power-down when deselected


    Original     		PDF Y7C10 CY7C1022 400-mil CY7C1022

    CY7C1020

    Abstract: No abstract text available
    Text: Y7C10 PRELIMINARY CY7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).


    Original     		PDF Y7C10 CY7C1020 I/O16) 44-pin 400-mil 44-Lead 400-Mil) CY7C1020-15ZC 44-Lead CY7C1020L-15ZC CY7C1020

    CY7C1021BV33

    Abstract: CY7C1021CV33 TSOP 48 thermal resistance
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 Pb-fre1/02 CY7C1021BV33 TSOP 48 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021CV33 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C ■ Pin and function compatible with CY7C1021CV33


    Original     		PDF CY7C1021CV33 44-pin 44-pin 48-ball CY7C1021CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball

    CY7C1021BN-15VI

    Abstract: CY7C1021BN
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN-15VI CY7C1021BN

    CY7C1024DV33

    Abstract: No abstract text available
    Text: CY7C1024DV33 PRELIMINARY 3-Mbit 128K X 24 Static RAM Features Functional Description • High speed The CY7C1024DV33 is a high-performance CMOS static RAM organized as 128K words by 24 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1024DV33 CY7C1024DV33

    CY7C1020B

    Abstract: No abstract text available
    Text: 020B CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020B I/O16) 44-pin CY7C1020B

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN

    CY7C1020CV33

    Abstract: CY7C1020V33
    Text: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static


    Original     		PDF CY7C1020CV33 CY7C1020V33 CY7C1020CV33 CY7C1020V33

    CY7C1021CV33

    Abstract: CY7C1021DV33 CY7C1021DV33-10VXI
    Text: CY7C1021DV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021DV33 CY7C1021DV33 CY7C1021CV33 I/O16 I/O15 83MHz, 66MHz 40MHz CY7C1021CV33 CY7C1021DV33-10VXI

    CY7C1024AV33

    Abstract: No abstract text available
    Text: 024AV33 CY7C1024AV33 128K x 24 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE1, CE2, CE3 active and Write Enable (WE) inputs LOW. Data on the 24 I/O pins (I/O0 through I/O23) is then written into the location specified on the address pins (A0 through A16).


    Original     		PDF 024AV33 CY7C1024AV33 I/O23) CY7C1024AV33 BG119)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power


    Original     		PDF CY7C1021D CY7C1021B 44-pin 400-mil CY7C1021D

    A14C

    Abstract: CY7C1022
    Text: fax id: 1105 -mr ' : : .üÉÉÉÉÉÉÉÉÉÉüiüiüHjjju'.' •^M .-X^,. : : : IS . .: : : ' : ; : : : ; : CY7C1022 P R E L IM IN A R Y •rriM U M iM iiiu m m r :iÉÉ ¡Ígg^-'í^ : t V Kw^ :1- JÜ § « < !N : — I" | :|3 : k j k-D 32K Features


    OCR Scan     		PDF 400-mil CY7C1022 CY7C1022 A14C

    A10C

    Abstract: A14C CY7C1020
    Text: fax id: 1074 PRELIMINARY CY7C1020 WO YPHESS 32K Features BLE is LOW, then da ta from I/O pins (l/O-i thro u g h l/Og), is w ritten into the location specified on the address pins (A 0 throu gh A 1 4 ). If byte high enable (BHE) is LOW, then da ta from I/O pins (l/Og throu gh l/O-ie) is w ritten into the location sp e ci­


    OCR Scan     		PDF 44-pin 400-mil CY7C1020 CY7C1020 A10C A14C

    7C1021

    Abstract: C2223 ge639 A12C CY7C1021
    Text: CYPRESS Features • 12 ns • C M O S for optim um speed/pow er • L ow active power — 1020 mW • A vailable in 450 x 550-m il LCC • A utom atic power-down w hen deselected • E asy m em ory exp an sion w ith C Ej, CE 2, and O E options CY7C1021 64K x 16 Static RAM


    OCR Scan     		PDF CY7C1021 550-mil CY7C1021 l/016 7C1021 7C102Xâ 7C1021 C2223 ge639 A12C

    CY7C1021V30

    Abstract: CY7C1021V30-15BAI
    Text: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0


    OCR Scan     		PDF CY7C1021V30 48-ball CY7C1021V30 CY7C1021V30-15BAI

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1075 CY7C1020V _ Features 32Kx 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq through A 1 4 ). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0-|6) is written into the location speci­


    OCR Scan     		PDF CY7C1020V

    Untitled

    Abstract: No abstract text available
    Text: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A


    OCR Scan     		PDF 7C101A: CY7C101A CY7C102A 7C101A) CY7C101Aand CY7C102Aare in982.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­


    OCR Scan     		PDF CY7C1020 44-pin 400-mil

    550mi

    Abstract: No abstract text available
    Text: 7c1021: March 31,1995 Revised: June 25,1996 CY7C1021 64K x 16 Static RAM ADVANCED INFORMATION Features Functional Description The CY7C1021 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF 7c1021: 550-mil CY7C1021 I/O13 I/O10 7C1021--12 7C1021--15 7C1021--20 550mi

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		PDF CY7C1021V30

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021 P Yi. PX :V«*1 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through I/0 1 6) is written into the location speci­


    OCR Scan     		PDF CY7C1021

    A14C

    Abstract: CY7C1020V
    Text: fax id: 1075 ^ ;a a a z g g s t CY7C1020V PRELIMINARY ; U I F lm ß b ö 32K Features 16 Static RAM X BLE is LOW, then da ta from I/O pins (l/O-j throu gh l/ 0 8), is w ritten into the location specified on th e address pins (A 0 throu gh A-| 4 ). If byte high en ab le (BH E) is LOW, then da ta from


    OCR Scan     		PDF 44-pin 400-mil CY7C1020V A14C