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    Cypress Semiconductor CY7B136-15JC

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    CY7B136 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7B136-15 Cypress Semiconductor V(cc): 2.4V 2048-byte deep dual-port RAM with 2 independent sets of address signals Scan PDF
    CY7B136-15JC Cypress Semiconductor 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Scan PDF
    CY7B136-15JC Cypress Semiconductor 2K x 8 Dual-Port Static RAM Scan PDF
    CY7B136-20 Cypress Semiconductor V(cc): 2.4V 2048-byte deep dual-port RAM with 2 independent sets of address signals Scan PDF
    CY7B136-20JC Cypress Semiconductor 2K x 8 Dual-Port Static RAM Scan PDF
    CY7B136-20JC Cypress Semiconductor 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Scan PDF
    CY7B136-20JI Cypress Semiconductor 2K x 8 Dual-Port Static RAM Scan PDF
    CY7B136-20JI Cypress Semiconductor 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Scan PDF

    CY7B136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B1369

    Abstract: B1368 B1363 B1366 semiconductor B1369 b1367
    Text: fax id: 5208 1CY 7B1 46 CY7B136 CY7B146 2K x 8 Dual-Port Static RAM Features • • • • • • • • 0.8-micron BiCMOS for high performance Automatic power-down TTL compatible Capable of withstanding greater than 2001V electrostatic discharge Fully asynchronous operation


    Original     		PDF CY7B136 CY7B146 CY7B146 CY7B136; 16-bit B1369 B1368 B1363 B1366 semiconductor B1369 b1367

    b1366 equivalent

    Abstract: b1369 B1366 B1363 b1367 B136-2 CY7B136 B136 T b136
    Text: CY7B136 CY7B146 2K x 8 DualĆPort Static RAM output enable OE . BUSY flags are proĆ Features Functional Description D The CY7B136 and CY7B146 are highĆ speed BiCMOS 2K by 8 dualĆport static RAMS. Two ports are provided to permit independent access to any location in


    Original     		PDF CY7B136 CY7B146 CY7B136 CY7B146 16bit b1366 equivalent b1369 B1366 B1363 b1367 B136-2 B136 T b136

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


    Original     		PDF PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113

    B1311

    Abstract: B13117 7B131-20 CY7B131-20JI B-1311
    Text: fax id: 5209 1CY 7B1 31 CY7B131 CY7B141 1Kx8 Dual-Port Static RAM Features • • • • • • • • 0.8-micron BiCMOS for high performance Automatic power-down TTL compatible Capable of withstanding greater than 2001V electrostatic discharge Fully asynchronous operation


    Original     		PDF CY7B131 CY7B141 CY7B141 CY7B131; 16-bit B1311 B13117 7B131-20 CY7B131-20JI B-1311

    b1367

    Abstract: K B1367 B1364 B146 CY7B136
    Text: CY7B136 CY7B146 E lectrical C h aracteris tic s O ver the O perating R a ng ed Parameter Description 7B136-15 7B146-15 Test Conditions Min. 7B136-20 7B146-20 Max. Min. 2.4 Max. V OH Output HIGH Voltage Vc c = Min., Iqh = -4 .0 mA V OL Output LOW Voltage Iql = 4.0 mA


    OCR Scan     		PDF CY7B136 7B136-15 7B146-15 7B136-20 7B146-20 b1367 K B1367 B1364 B146 CY7B136

    b1367

    Abstract: K B1367 b1361 B136 B1364 CY7B136 B136-7
    Text: CY7B136 CY7B146 Electrical Characteristics Parameter Over the Operating R anged Description 7B136-15 7B146-15 Test Conditions Min. 7B136-20 7B146-20 Max. Min. Max. VOH Output HIGH Voltage Vc c = Min., Iqh = -4 .0 mA VOL Output LOW Voltage Iql = 4.0 mA lOL = 16.0 mA[4]


    OCR Scan     		PDF CY7B136 CY7B146 7B136-15 7B146-15 7B136-20 7B146-20 b1367 K B1367 b1361 B136 B1364 CY7B136 B136-7

    Untitled

    Abstract: No abstract text available
    Text: m w CYPRESS Features Functional D escription • 0.8-m icron BiCM OS for high perform ance • Autom atic power-down • TTL com patible • C apable of w ithstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • M aster CY7B136 easily expands data


    OCR Scan     		PDF CY7B136 CY7B146 CY7B136; CY7B146 7B146 136-2U --20JC --20JI

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5209 ZZZZSESEEEE2 ¿Em rs z g g g p p r ,r T ~ ^ T ~ i T ? o L > I 1 CY7B131 0Y7B141 o - 11 C O D 1 Kx8 Dual-Port Static RAM can be utilized as either a standalone 8-bit dual-port static RAM or as a MASTER dual-port RAM in conjunction with the


    OCR Scan     		PDF CY7B131 0Y7B141 CY7B141 16-bit

    B1367

    Abstract: K B1367 B136-2 CY7B136 CY7B146 b1361 B136-7
    Text: fax id: 5208 C Y 7 B 136 —— — Æ j r r ~ 'f V I D 1 C Y 7 B 146 D 17 Q Q IT C O O 2K x 8 Dual-Port Static RAM Features can be utilized as e ith e r a standalone 8-bit d u al-port static RAM or as a M ASTER d u a l-p o rt RAM in con ju nction w ith the


    OCR Scan     		PDF CY7B136 CY7B146 CY7B146 CY7B136; CY7B136 B1367 K B1367 B136-2 b1361 B136-7

    LA 78141

    Abstract: la 78141 equivalent 78141 TTL LA 78141 B1364 CY7B131 CY7B141 A7LC
    Text: fax id: 5209 CY7B131 CY7B141 — —— Æ r~'fV D D 17 Q Q j r I 1 IT C O O 1 Kx8 Dual-Port Static RAM Features • • • • 0.8-micron BiCMOS for high performance Automatic power-down TTL compatible Capable of withstanding greater than 2001V electro­


    OCR Scan     		PDF CY7B131 CY7B141 CY7B141 CY7B131; CY7B131 LA 78141 la 78141 equivalent 78141 TTL LA 78141 B1364 A7LC