CY62138F
Abstract: CY62138FLL-45SXI CY62138FLL-45ZSXI CY62138V
Text: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 5 µA
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CY62138F
CY62138V
32-pin
CY62138FLL-45SXI
CY62138FLL-45ZSXI
CY62138V
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Untitled
Abstract: No abstract text available
Text: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description[1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features
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CY62138F
CY62138V
32-pin
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Untitled
Abstract: No abstract text available
Text: CY62138VN MoBL 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features
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CY62138VN
36-ball
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CY62138V
Abstract: CY62138VLL-70BAI
Text: CY62138V MoBL 2-Mbit 256K x 8 Static RAM This is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The
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CY62138V
36-ball
CY62138VLL-70BAI
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CY62138V
Abstract: CY62138VL-70ZI
Text: PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1.8−3.3V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected
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CY62138V
CY62138VL-70ZI
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62137A
Abstract: No abstract text available
Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell
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R52LD
CY62136V/CY62137V
CY62138V
CY62136V/62137V/62138V
7C62136/7A)
7C62136A/62137A/62138A
H137V-ZSIB
CY62137V-ZSIB
30C/60
62137A
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CY62137V
Abstract: CY62138V
Text: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor
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R52LD
CY62136V/CY62137V
CY62138V
CY62136V/62137V/62138V
7C62136/7A)
CY62136V/62137V/62138V
R52LD-3
CY62137V
44-pin
CY62137V
CY62138V
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CY62138V
Abstract: CY62138VLL-70BAI CY62138VLL
Text: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected
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CY62138V
36-ball
CY62138VLL-70BAI
CY62138VLL
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CY62138VN
Abstract: CY62138VNLL-70BAI
Text: CY62138VN MoBL 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features
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CY62138VN
36-ball
CY62138VNLL-70BAI
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114936
Abstract: No abstract text available
Text: CY62138V MoBL 2-Mbit 256K x 8 Static RAM This is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The
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CY62138V
36-ball
114936
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CY62138V
Abstract: CY62138VLL-70BAI
Text: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected
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CY62138V
CY62138VLL-70BAI
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CY62138F
Abstract: CY62138FLL-45SXI CY62138FLL-45ZSXI CY62138V
Text: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 5 µA
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CY62138F
CY62138V
32-pin
CY62138FLL-45SXI
CY62138FLL-45ZSXI
CY62138V
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CY62138V
Abstract: CY62138VLL-70BAI
Text: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected
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CY62138V
CY62138VLL-70BAI
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ecn1310
Abstract: No abstract text available
Text: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Features • High speed: 45 ns ■ Wide voltage range: 4.5 V – 5.5 V ■ Pin compatible with CY62138V ■ Ultra low standby power Functional Description [1] The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features
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CY62138F
ecn1310
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ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
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CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
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Untitled
Abstract: No abstract text available
Text: Press Release CYPRESS'S NEW MoBL SRAMS SET NEW BENCHMARK FOR LOW POWER 0.25-Micron Devices Offer the Industry’s Lowest Power Consumption SAN JOSE, Calif., December 7, 1998 – Cypress Semiconductor Corp. [NYSE:CY] today introduced a new family of micropower SRAMs with the industry’s lowest power consumption. Cypress’s MoBL™ More Battery Life™
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25-Micron
000-unit
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Untitled
Abstract: No abstract text available
Text: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138F
CY62138V
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EPM5128LC
Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C
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CY2148-35C
CY21L48-35C
CY7C168A-35C
CY7C168A-25C
5962-8871309XX
5962-89839112X
CY7C148-35C
CY7C168A-45M
CY7C168A-35M+
EPM5128LC
IDT CYPRESS CROSS REFERENCE clocks
epm5064lc-1
EPM5128LC-1
EPM5064LC
EPM5128LC-2
EPM5128GI
EPM5128JC-1
8464c
5962-8871309
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ecn1310
Abstract: No abstract text available
Text: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62138F
ecn1310
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CYPRESS SAMSUNG CROSS REFERENCE
Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V
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K6Y0808C1D
BS62XV1024-25
BS62UV1024-15
BS62LV1024-70
BS62XV2000-25
BS62UV2000-15
BS62LV2000-10
BS62LV2000-70
BS62XV256-25
32Kx8
CYPRESS SAMSUNG CROSS REFERENCE
TC55V400-70
toshiba 32k*8 sram
TC55257DI-L-70
tbb1458b
BS62LV1024-70
BS62UV1024-15
BS62UV256-15
K6F8008S2M
BS62LV4005-70
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CY62138V
Abstract: CY62138VL-70ZI CY62138VLL-70ZI
Text: CYPRESS PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features W riting to the device is acco m p lished by ta kin g chip enable one CS-| and w rite enable (W E) inputs LO W and chip enable tw o (C S 2) input HIG H. Data on th e eight I/O pins (I/Oq through
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CY62138V
CY62138VL-70ZI
CY62138VLL-70ZI
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Untitled
Abstract: No abstract text available
Text: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1 .8 -3 .3V • Ultra-low active power • Low standby power • Easy memory expansion with C S i/C S 2 and OE features • TTL-com patible inputs and outputs • Automatic power-down when deselected
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CY62138V
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38-00729-A
Abstract: 10J1 CY62138V CY62138VL-70BAI fbga Substrate design guidelines
Text: CY62138V MoBL T M F/ CYPRESS 256K x 8 Static RAM sumption by 99% when addresses are not toggling. The device can be put into standby mode when deselected CS-| HIGH or CS2 LOW . Features • Low voltage range: -2 .7 -3 .6 V • • • • • • Ultra-low active power
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CY62138V
38-00729-A
10J1
CY62138VL-70BAI
fbga Substrate design guidelines
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Untitled
Abstract: No abstract text available
Text: CYPRESS PRELIMINARY CY62138V MoBL 256K x 8 Static RAM W riting to the device is acco m p lished by ta kin g chip enable one CS-| and w rite en ab le (W E) inputs LO W and chip enable tw o (C S 2) input HIG H. Data on the eight I/O pins (I/Oq through I/O 7) is then w ritten into the location spe cifie d on the address
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CY62138V
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