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    CY62137 Price and Stock

    Flip Electronics CY62137FV30LL-45BVXI

    IC SRAM 2MBIT PARALLEL 48VFBGA
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    DigiKey CY62137FV30LL-45BVXI Tray 52,485 300
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    Cypress Semiconductor CY62137FV30LL-45ZSXI

    NO WARRANTY
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    DigiKey CY62137FV30LL-45ZSXI Tray 23,076 1
    • 1 $2.03
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    Newark CY62137FV30LL-45ZSXI Bulk 675
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    Bristol Electronics CY62137FV30LL-45ZSXI 265
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    Quest Components CY62137FV30LL-45ZSXI 212
    • 1 $3.744
    • 10 $3.744
    • 100 $1.872
    • 1000 $1.7316
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    Flip Electronics CY62137FV30LL-45ZSXI 16,124
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    Flip Electronics CY62137FV30LL-55ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey CY62137FV30LL-55ZSXE Tray 8,996 100
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    Infineon Technologies AG CY62137FV18LL-55BVXIT

    IC SRAM 2MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62137FV18LL-55BVXIT Reel 2,000 2,000
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    Mouser Electronics CY62137FV18LL-55BVXIT
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    Infineon Technologies AG CY62137EV30LL-45ZSXIT

    IC SRAM 2MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62137EV30LL-45ZSXIT Reel 2,000 1,000
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    Avnet Americas CY62137EV30LL-45ZSXIT Reel 4 Weeks 1
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    Mouser Electronics CY62137EV30LL-45ZSXIT 1,990
    • 1 $4.23
    • 10 $3.79
    • 100 $3.35
    • 1000 $3.02
    • 10000 $2.97
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    EBV Elektronik CY62137EV30LL-45ZSXIT 15 Weeks 1,000
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    Find more CY62137 price and stock on Findchips.com

    CY62137 Datasheets (102)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62137BV18LL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62137CV18 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV18LL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV18LL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV18LL-70BKI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV18LL-70BVI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV25 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV25LL-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV25LL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV25LL-55BVI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62137CV25LL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV25LL-70BAI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62137CV25LL-70BVI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62137CV30 Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62137CV30LL Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137CV30LL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV30LL-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV30LL-55BVI Cypress Semiconductor MoBL 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137CV30LL-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF

    CY62137 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62137EV30

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin

    48 ball VFBGA

    Abstract: CY62137CV30 CY62137EV30
    Text: CY62137EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV30 • Ultra-low standby power — Typical standby current: 1µA — Maximum standby current: 7µA


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin CY62137EV30 48 ball VFBGA CY62137CV30

    CY62137CV30

    Abstract: CY62137EV30
    Text: CY62137EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV30 • Ultra-low standby power — Typical standby current: 1µA — Maximum standby current: 7µA


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin CY62137EV30 CY62137CV30

    CY62137CV18

    Abstract: 1105
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a


    Original     		PDF CY62137CV18 I/O15) CY62137BV18 1105

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V 44-pin CY62137CV30.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY62137V MoBL 128K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: — 1.8V–3.3V • Ultra-low active, standby power • Easy memory expansion with CE and OE features


    Original     		PDF CY62137V I/O15)

    2VCC-02

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62137FV18 CY62137CV18 48-Ball 2VCC-02

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 48-ball 44-pin

    AN1064

    Abstract: CY62137EV30 CY62137FV30 CY62137FV30LL CY62137V
    Text: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing


    Original     		PDF CY62137FV30 AN1064 CY62137EV30 CY62137FV30LL CY62137V

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin

    CY62137CV

    Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance
    Text: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power


    Original     		PDF CY62137CV30/33 CY62137CV CY62137V 48-ball CY62137CV25 CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 I/O15)

    CY62137

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL Automotive 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 44-pin CY62137

    CY62137CV30LL-55BVXI

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05201 Spec Title: CY62137CV30/33 MOBL R AND CY62137CV MOBL(R) 2-MBIT (128K X 16) STATIC RAM Sunset Owner: Nikhil Mittal (NIKM) Replaced by: None CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit (128K x 16) Static RAM Features


    Original     		PDF CY62137CV30/33 CY62137CV CY62137V CY62137CV30LL-55BVXI

    CY62137CV

    Abstract: CY62137V
    Text: CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put


    Original     		PDF CY62137CV25/30/33 CY62137CV I/O15) CY62137V

    CY62137CV

    Abstract: CY62137V CY62137CVSL-70BAI
    Text: CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put


    Original     		PDF CY62137CV25/30/33 CY62137CV I/O15) CY62137V CY62137CVSL-70BAI

    VDR 0047

    Abstract: CY62137V CY62137VSL
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • • • • • • • • — Automotive: –40°C to 125°C High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V


    Original     		PDF CY62137V 44-pin CY62137CV30. VDR 0047 CY62137VSL

    Untitled

    Abstract: No abstract text available
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features deselected CE HIGH or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are


    Original     		PDF CY62137CV18 CY62137CV18: CY62137V18/BV18 I/O15)

    55BA

    Abstract: ultra fine pitch BGA CY62137V CY62137VLL-55ZI
    Text: 37V18 CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V


    Original     		PDF 37V18 CY62137V CY62137V: 55BA ultra fine pitch BGA CY62137VLL-55ZI

    62137A

    Abstract: No abstract text available
    Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell


    Original     		PDF R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A

    VDR 0047

    Abstract: CY62137V
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V I/O15) CY62137CV30 VDR 0047

    CY62137V

    Abstract: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI
    Text: 1*CY62137V18 MoBL2 CY62137V MoBL™ 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range:


    Original     		PDF CY62137V18 CY62137V CY62137V: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137FV18 CY62137CV18 48-ball

    A15C

    Abstract: CY62137V CY62137V18 CY62137VLL-70BAI CY62137VLL-70ZI CY62137
    Text: CY62137V MoBL CY62137V18 MoBL2™ CYPRESS 1 2 8 K x 1 6 S ta tic R A M Features are placed in a h igh -im pe da nce state w h en : de selected CE HIG H , ou tputs are disabled (OE HIG H), BHE and BLE are disabled (B H E , BLE HIG H), o r during a w rite op era tion (CE


    OCR Scan     		PDF CY62137V18 CY62137V: CY62137V A15C CY62137VLL-70BAI CY62137VLL-70ZI CY62137