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    Abstract: No abstract text available
    Text: S O N Y CXK58257BTM/BM -70LLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK50257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK58257BTM/BM -70LLB/10LLB 32768-word CXK50257BTM/BM CXK58257BTM/BM 70LLB 120ns 10LLB 150ns PDF

    CXK58257

    Abstract: cxk56257b
    Text: SONY CXK58257BTM/BM -7QLLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK58257BTM/BM -7QLLB/10LLB 32768-word CXK58257 CXK58257BTM CXK58257BM CXK58257BTM/BM 70LLB 10LLB cxk56257b PDF