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    CURVAS MOSFET Search Results

    CURVAS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    CURVAS MOSFET Datasheets Context Search

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    RELAY DE ESTADO SOLIDO

    Abstract: reles ESTADO solido diodo potencia optoacoplador hoja de datos de diodo ANTENA transformador manual circuitos integrados circuitos integrados diodo silicio
    Text: Ventajas de los Relés de Estado Sólido respecto a los Relés Electromecánicos AN 145 Hoja de aplicación 1. Introducción Muchos diseños electrónicos pueden aprovechar las mejores prestaciones de los relés de estado sólido SSR, Solid-State Relays en relación con los relés electromecánicos (EMR, Electro-Mechanical Relays) para


    Original     		PDF AN-145espa RELAY DE ESTADO SOLIDO reles ESTADO solido diodo potencia optoacoplador hoja de datos de diodo ANTENA transformador manual circuitos integrados circuitos integrados diodo silicio

    FRM6756D

    Abstract: FRM6756H FRM6756M FRM6756R 1E1A
    Text: Radiation-Hardened MOSFETs FRM6756M, FRM6756D FRM6756R, FRM6756H File Number 2173 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 14 A, 100 V rDs(on) = 0.18 f i N-CHANNEL ENHANCEMENT MODE Features: • Linear transfer characteristics


    OCR Scan     		PDF FRM6756M, FRM6756D FRM6756R, FRM6756H FRM67S6M FRMS756R FRM67S6H 1000K FRM6756H FRM6756M FRM6756R 1E1A

    Untitled

    Abstract: No abstract text available
    Text: f i H W S E M I C O N D U C T O R A R R HIP4081A IS 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Description Features Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations Bootstrap Supply Max Voltage to 95VDC


    OCR Scan     		PDF HIP4081A 95VDC 1000pF HIP4081A M3G2271 DDbl02b

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt