Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CT2335ALN Search Results

    CT2335ALN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100-C85

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM ASSEMBLY DWG: 1101504 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3


    Original
    PDF CT2335ALN 824W154. 755W002. 100-C85

    CT2335ALNF

    Abstract: 1010755 100-C85
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM, LEAD FREE ASSEMBLY DWG: 1102094 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ.


    Original
    PDF CT2335ALNF 824W154. 755W002. 1010755 100-C85

    100-C85

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM ASSEMBLY DWG: 1101504 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3


    Original
    PDF CT2335ALN IP-1014. MC0023. 100-C85

    100-C85

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM ASSEMBLY DWG: 1101504 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3


    Original
    PDF CT2335ALN 824W154. 755W002. 08-E0399 100-C85

    755w002

    Abstract: 100-C85
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM, LEAD FREE ASSEMBLY DWG: 1102094 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ.


    Original
    PDF CT2335ALNF 824W154. 755W002. 08-E0712 755w002 100-C85

    100-C85

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT2335ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, THICK FILM, LEAD FREE ASSEMBLY DWG: 1102094 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ.


    Original
    PDF CT2335ALNF IP-1014. MC0023. 05-E0038 100-C85

    tva0300n07

    Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
    Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,


    Original
    PDF

    CT2525ALN

    Abstract: CT3523 CT2010A
    Text: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced


    Original
    PDF CT2525 CT3518A* CT2335ALN CT2335 CT3523T* CT3725ALN CT3725TALN* CT3725 CT3737ALN CT3737 CT2525ALN CT3523 CT2010A

    ina 124

    Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
    Text: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz


    OCR Scan
    PDF 42TVA R0300 HR0500 TS0300 TS0300W TS0400 TS0500 TS0500W1 TS0500W TS0500WB1 ina 124 CT2525ALN "beryllium oxide" ct2335 SMT3725ALN SC0066M

    CT2525ALN

    Abstract: CT2010A
    Text: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced


    OCR Scan
    PDF CT2525 CT3518A* CT2335ALN CT2335 CT3523T* CT3725ALN CT3725TALN* CT3725 CT3737ALN CT3737 CT2525ALN CT2010A

    CT-1005

    Abstract: g 0247 0372
    Text: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO


    OCR Scan
    PDF CT0402 CT2010A* CT0505ALN CT0505 CT1005 CT1005TALN CT1206 CT1206ALN CT2010 CT2010ALN CT-1005 g 0247 0372