cs-23-08io2
Abstract: TO-208AA 23-16io2
Text: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions
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O-208AA
23-08io2
23-12io2
23-16io2
cs-23-08io2
TO-208AA
23-16io2
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TO-208AA
Abstract: 208AA thyristor to48 cs23
Text: Phase Control Thyristors CS 23 ITRMS = 50 A I TAVM = 32 A VRRM = 800 - 1600 V VRSM VRRM VDSM VDRM V V 900 1300 1700 800 1200 1600 Type 1 2 TO-208AA TO-48 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine
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O-208AA
23-08io2
23-12io2
23-16io2
TO-208AA
208AA
thyristor to48
cs23
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208AA
Abstract: No abstract text available
Text: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions
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O-208AA
23-08io2
23-12io2
23-16io2
208AA
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Untitled
Abstract: No abstract text available
Text: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions
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O-208AA
23-08io2
23-12io2
23-16io2
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SCR 2146
Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Text: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30
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E1-10
E1-13
E1-16
E1-19
E1-22
E1-24
E1-26
SCR 2146
72-12io8
cs 45-12IO1
scr 2032
IGD 001
tg-500
IXYS SCR Gate Drive
CS 45-16io1R
300-12io3
CS thyristor cs 3-06
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IGD 001
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
IGD 001
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IXYS SCR Gate Drive
Abstract: No abstract text available
Text: CS 29 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 23 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS220TM Type A C 1 2 800 1200 CS 29-08io1C CS 29-12io1C 3 G
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ISOPLUS220TM
29-08io1C
29-12io1C
ISOPLUS220
IXYS SCR Gate Drive
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Untitled
Abstract: No abstract text available
Text: CS 29 VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A Phase Control Thyristor ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS220TM Type A C CS 29-08io1C CS 29-12io1C 1 G 2 3 Isolated back surface*
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ISOPLUS220TM
29-08io1C
29-12io1C
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Untitled
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
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Untitled
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit)
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
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IGCT thyristor ABB
Abstract: high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 March 05 • High snubberless turn-off rating • Optimized for medium frequency (<1kHz) and
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26L4510
5SYA1230-02
CH-5600
IGCT thyristor ABB
high power igct abb
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IGCT thyristor ABB
Abstract: IGCT
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency
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19L6020
5SYA1250-00
CH-5600
IGCT thyristor ABB
IGCT
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E113
Abstract: E119 7E17 8IO2 IXYS cs
Text: Discrete Thyristors Contents Package style Type Page 16 CS 8-.io2 E1-2 19 19 CS19-.ho1 CS 19-.ho1S E1-4 19 CS20-.io1 E1-7 32 CS 23 E1-10 31 CS 30 E1-13 CS 35 E1-16 CS45-.Î01 CS45-.Î01R new E1-19 100 CS 72 E1-22 164 CS 142 E1-24 380 CS300 E1-26
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CS19-.
CS20-.
E1-10
E1-13
E1-16
E1-19
CS45-.
CS300
E1-22
E113
E119
7E17
8IO2
IXYS cs
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mq137
Abstract: csf369 CSF499 00Q0 CS 661
Text: I X Y S CORP 1ÖE D • 4hñb22b 00Q0 7 7 S 7 ■ Line Commutated Thyristors o o o o • • • /VRFm V o o o o CM CO V- T“ • • Itav 1400 200 Version 1 008 Type o o <o T— CS 5 2.3 CS 8 2.3 C S 16 C S 23 C S 35 C S 52 2.3 2.3 4 1,8 25 60 50 C S 72
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CS1000
CSF369
CSF499
mq137
CSF499
00Q0
CS 661
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ABB ACS 800
Abstract: abb cs 400 130016 cs 730 abb acs 150 CS 370 thyristor CS thyristor cs 6 CS thyristor cs 5-10 44108 130232
Text: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %
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00D017S
BOO/65
To-80PC
ABB ACS 800
abb cs 400
130016
cs 730
abb acs 150
CS 370 thyristor
CS thyristor cs 6
CS thyristor cs 5-10
44108
130232
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abe 810
Abstract: CS thyristor cs 6 f0023 abb thyristor 500AC CS thyristor cs 5-10 CS 630 F CS 661-32 130238 0/abe 810
Text: A S E A BROWN/ ABB A3 SEMI CON Netzthyristoren Thyristor Typ/type * 0 0 4 ñ 3 0 fi 0 0 0 0 1 7 5 Phase control thyristors Vr r m •t r m s h w i/Tc hvwM Tc = 85°C V A v drm D I A/°C A •t s m Ovjm 8,3 ms A 10 ms A ft 10 ms) TVJS45°C tvjm A 2S AJS
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TVJS45
abe 810
CS thyristor cs 6
f0023
abb thyristor
500AC
CS thyristor cs 5-10
CS 630 F
CS 661-32
130238
0/abe 810
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ABB ACS 800
Abstract: thyristor cs 1702-38 cs 1000-16 ASEA Brown din 5480 CS 601 thyristor CS 1001-25 abb thyristor 170242 CS 370 thyristor
Text: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %
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00D017S
B00/65
ABB ACS 800
thyristor cs 1702-38
cs 1000-16
ASEA Brown
din 5480
CS 601 thyristor
CS 1001-25
abb thyristor
170242
CS 370 thyristor
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A2529
Abstract: CS 8-12 10MSA
Text: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high
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O-247
ISOPLUS22QTM
O-208
T0-208
ISOPLUS247TM
-28UNF-2
A2529
CS 8-12
10MSA
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cs 23-12
Abstract: scr 2308 CS 8-12 10MSA
Text: , Thyristors SCRs SCR = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all other semiconductor components, they feature the highest current capacity per chip area, espe cially at high voltage. They are mainly
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O-208AA
O-208AC
O-209AC
cs 23-12
scr 2308
CS 8-12
10MSA
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T 4512 H diode
Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Text: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re
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O-247
TC5-208
T0-209
T 4512 H diode
diode T 4512 H
cs 23-12
cs 45-12 iol
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CS 8-12
Abstract: CS45-08iol CS630 CS2014 CS30-16 CS30-16iol CS45-16 300-12io3 CS1250 cs 35-12
Text: , Thyristors SCRs Phase Control Thyristors SC R = S ilicon C o ntrolled R ectifier Thyristors are very rugged devices. Compared to all other sem iconductor components, the y feature the highest current capacity per chip area, especially at high voltage. They are mainly used as
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-208AA
O-20BAC
CS 8-12
CS45-08iol
CS630
CS2014
CS30-16
CS30-16iol
CS45-16
300-12io3
CS1250
cs 35-12
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CS5 thyristor
Abstract: CS 23-16 thyristor CS 23-08 thyristor CS 23-06 thyristor CS 110 thyristor CS 23-04 thyristor CS thyristor cs 6-06 cs 16-12 cs 6-06 CS thyristor cs 6
Text: Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lf ic Itavm 85°C r Typ/type CS 0,8-02 do CS 0,8-04 do CS 0,8-06 do CS 0,8-07 do CS 0,8-08 do CS CS CS CS CS 3-02 3-04 3-06 3-07 3-08 do do do do do 2 2 2 \ bzw. 2 2 r 2 21 bzw.
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O-220
-TO-48
7073sl/22b
CS5 thyristor
CS 23-16 thyristor
CS 23-08 thyristor
CS 23-06 thyristor
CS 110 thyristor
CS 23-04 thyristor
CS thyristor cs 6-06
cs 16-12
cs 6-06
CS thyristor cs 6
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CS thyristor cs 6-06
Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
-TO-48
CS thyristor cs 6-06
CS 23-16 thyristor
CS5 thyristor
CS 23-06 thyristor
CS thyristor cs 3-04
CS thyristor cs 6
CS 23-04 thyristor
CS thyristor cs 3-06
cs 8-12 Thyristor
CS 23-08 thyristor
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
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