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    CRYSTALONICS CH Search Results

    CRYSTALONICS CH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE912NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Latch, Fixed Over Voltage Clamp, WSON8 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE920NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Auto-retry, Fixed Over Voltage Clamp, WSON8 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE912NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Auto-retry, Fixed Over Voltage Clamp, WSON8 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE905NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Latch, Fixed Over Voltage Clamp, WSON8 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE905QNA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 3 to 23V, 4A, Auto-retry, Fixed Over Voltage Clamp, WSON8 Visit Toshiba Electronic Devices & Storage Corporation

    CRYSTALONICS CH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3440 2N5416 REPLACEMENT

    Abstract: 2N4001 diode Motorola -transistors 2N3440 MOTOROLA Motorola diodes 2N5415 REPLACEMENT 2N5416 MOTOROLA 2N5415
    Text: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 1 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors


    Original     		MV1403, MV1404 MV1405s 2N4234 2N4235 2N4236 2N4898 2N4899 2N4900 2N5415 2N3440 2N5416 REPLACEMENT 2N4001 diode Motorola -transistors 2N3440 MOTOROLA Motorola diodes 2N5415 REPLACEMENT 2N5416 MOTOROLA PDF

    2N5333 MOTOROLA

    Abstract: Motorola diodes 2n5000 Transistors 2N3741 MOTOROLA TRANSISTORS REPLACEMENT 2N3740 motorola
    Text: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 2 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors


    Original     		MV1403, MV1404 MV1405s 2N2150 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N5333 MOTOROLA Motorola diodes 2n5000 Transistors 2N3741 MOTOROLA TRANSISTORS REPLACEMENT 2N3740 motorola PDF

    Motorola -transistors

    Abstract: Motorola diodes 2N3024 2N3025 2N3026 2N2984 2N2983 2N3021 2N3022 2N3023
    Text: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 3 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors


    Original     		MV1403, MV1404 MV1405s 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 Motorola -transistors Motorola diodes 2N3024 2N3025 2N3026 2N3021 2N3022 2N3023 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION TSC176 TSC177 TSC15C25A TSC15C27A TSC25C25A TSC25C27A TSC35C25A TSC35C27A WTELEDYNE COMPONENTS The capability of Teiedyne Semiconductor, Philbrick, Crystalonics And more. BiCMOS PWM CONTROLLERS Features • ■ ■ ■ ■ ■ ■


    OCR Scan     		TSC176 TSC177 TSC15C25A TSC15C27A TSC25C25A TSC25C27A TSC35C25A TSC35C27A 1000pF 700kHz PDF

    FF627

    Abstract: LS627 2800K
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		LS627 FF627 400mW FF627 LS627 2800K PDF

    U402 N CHANNEL FET

    Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		LS627 FF627 400mW U402 N CHANNEL FET P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode PDF

    Untitled

    Abstract: No abstract text available
    Text: ÜCT 1 1 ‘390 WTELEDYNE COMPONENTS The capability of Teledyne Semiconductor, Philbrick, Crystalonics And m ore. TSC172 TSC173 BICMOS CURRENT MODE SMPS CONTROLLER FEATURES • Low Power BiCMOS Construction ■ Low Supply Current. 1.5 mA Typ


    OCR Scan     		TSC172 TSC173 500mA F-92300 PDF

    Untitled

    Abstract: No abstract text available
    Text: , Line. u 20 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SPRINGFIELD, NEW JERSEY 07081 U.S.A. IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25°C


    Original     		IFN860 CD860 NJ450L PDF

    amelco

    Abstract: No abstract text available
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS TO-72 TOP VIEW ULTRA HIGH SENSITIVITY 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		LS627 FF627 400mW 25-year-old, amelco PDF

    transistor D195

    Abstract: 3-pin D195 transistor D195
    Text: B 43 9 -9 7 IFN860 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER • Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current


    OCR Scan     		IFN860 CD860 NJ450L transistor D195 3-pin D195 transistor D195 PDF

    CAG48

    Abstract: SPDT FETs Crystalonics 2N5066 dpdt mechanical relays 3v 2N3677 CAG30 CDA28 CDA29 CS4R101A
    Text: H IG H L IG H T S CH-2 These circuits represent the best of combined Monolithic and Hybrid technology. Each uses a specially de­ signed Crystalonics monolithic circuit which interfaces with standard logic and drives discrete chip switching trarrsistors. While the monolithic circuit keeps size and cost to a minimum, the discrete output


    OCR Scan     		TheCS4R101A 10K/20K CAG48 SPDT FETs Crystalonics 2N5066 dpdt mechanical relays 3v 2N3677 CAG30 CDA28 CDA29 CS4R101A PDF

    FF627

    Abstract: ls627
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS TO-72 TOP VIEW ULTRA HIGH SENSITIVITY 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		LS627 FF627 400mW 25-year-old, FF627 ls627 PDF

    IFN860

    Abstract: CD860 transistor B43
    Text: Databook.fxp 1/14/99 12:22 PM Page B-43 B-43 01/99 IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage


    Original     		IFN860 CD860 IFN860 CD860 transistor B43 PDF

    TSC18C

    Abstract: No abstract text available
    Text: NOV 1 8 199 ' PRELIMINARY INFORMATION WTELEDYNE COMPONENTS TSC18C42/3/4/5 TSC28C42/3/4/5 TSC38C42/3/4/5 The capability o f Teledyne Sem iconductor, Philbrick, Crystalonics A n d m ore. BiCMOS CURRENT MODE SMPS CONTROLLER Features • ■ ■ ■ ■ ■


    OCR Scan     		TSC18C42/3/4/5 TSC28C42/3/4/5 TSC38C42/3/4/5 100kHz 500mA TSC18C PDF

    C0860

    Abstract: CD860 S1109 Crystalonics GAIA 10VIO 1AA6
    Text: C3= CRYSTALONICS W ebsite: W WW .Crystalonics.com Phone: 63 1-9 81 -61 40 Fax: (631-585-4858) * S e o p ric e lis t fo r o rd ering in fo rm a tio n ULTRA LOW NOISE CD860 DUAL M ATCHED N C H A N N E L FIELD EFFECT TRANSISTOR HIGH PERFO RM ANCE D IFFE R E N TIA L


    OCR Scan     		CD860 C0860 14CKMJ CD860 S1109 Crystalonics GAIA 10VIO 1AA6 PDF

    Crystalonics

    Abstract: CAG48 2N3677 CAG30 CDA28 CDA29 CS4R101A CSH101
    Text: HIGHLIGHTS C H -2 These circuits represent the best o f com bined M o n o lith ic and H yb rid technology. Each uses a specially de­ signed Crystalonics m o n o lith ic c irc u it w hich interfaces w ith standard logic and drives discrete chip switching trarrsistors. W hile the m o n o lith ic c irc u it keeps size and cost to a m in im u m , the discrete o u tp u t


    OCR Scan     		TheCS4R101A CSH101 CAG48 CAG48 CAG45 CAG30 CS4R101A CSH101 Crystalonics 2N3677 CAG30 CDA28 CDA29 CS4R101A PDF

    CP650

    Abstract: CP651 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics CP652 CP653
    Text: CP650 CP651 CP652 CP653 PO W RFET SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 424, PG. 58 • • • • LOW R d s - 5 Ohms TYPICAL LOW Cgd - 20 pfd TYPICAL HIGH lDSS - 0.5 Amp TYPICAL HIGH gm 150,000 /xmhos TYPICAL ELECTRICAL DATA


    OCR Scan     		CP650 CP651 CP652 CP653 CP653 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics PDF

    VA-201

    Abstract: teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207
    Text: TELEDYNE ! m EÛE D COMPONENTS a=ilT b Q e OClQbbUa ? • -T-0“7-/9 H IG H V O L T A G E - H I Q | VARACTRON V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S VA200-213 GEOMETRY 415 • ALL EPITAXIAL C O N S TR U C TIO N P + N N + • 1SO V O LTS DC RATING (M W V )


    OCR Scan     		-T-07â VA200-213 100mA C-200V VA300 VA301 VA302 VA303 VA304 VA305 VA-201 teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207 PDF

    TELEDYNE CRYSTALONICS

    Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
    Text: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C


    OCR Scan     		CP650 CP653 2N4445 2N4448 TELEDYNE CRYSTALONICS 2N4447 cgel 2N4448 N4446 2n4446 PDF

    2N5114

    Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
    Text: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso


    OCR Scan     		2N5114 2N5115 2N5114 2N5115= 2N5115 field effect transistors TELEDYNE CRYSTALONICS PDF

    3N131

    Abstract: 3N129 3N132 CEE 32A 3N123 3N130 3N133 3N136 teledyne crystalonics
    Text: « • • • • 3N129 3N130 3N131 3N132 3N133 PREMIUM PERFORMANCE LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 4 5 0 , PG . 59 ULTRA LOW ree (sat), 8 Ohms TYP. LOW Ceb & C«., 2.5 pfd TYP. LOW LEA KA G E, 0.5 nA MAX.


    OCR Scan     		3N129 3N130 3N131 3N132 3N133 3N133 CEE 32A 3N123 3N136 teledyne crystalonics PDF

    2N6550

    Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
    Text: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K


    OCR Scan     		2N6550 2N6550 000/j/ ultra low igss pA AAHB low igss 2N6550/CM860 PDF

    2N6550

    Abstract: CD860 teledyne transistor teledyne crystalonics
    Text: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level


    OCR Scan     		2N6550 CM860 E--07 2N6550/CM860/CD860 2N6550/CM860/CD860 CD860 teledyne transistor teledyne crystalonics PDF

    3n123

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS SÖE aT17bQ5 D □QQf c. STS S r ~'07-'d3 3N134 3N135 3N136 LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 45 0 • • • • U LTRA LOW ree(sat), 10 S2 TYP. LOW LEAKAGE, 2 na TYP. L 0 W C flb,3pfdTYP.


    OCR Scan     		aT17bQ5 3N134 3N135 3N136 3N134 3N135 3N13S 3N123 PDF