Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CREE SIC MOSFET Search Results

    CREE SIC MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG400Q2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 1200 V, 400 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV Visit Toshiba Electronic Devices & Storage Corporation
    MG250V2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    CREE SIC MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Solar Inverters

    Abstract: No abstract text available
    Text: 10-PZ12B2A040ME01-M330L63Y flow SOL0-SiC 1200 V / 40 mΩ Features TM ● Cree flow 0 12mm housing Silicon Carbide Power MOSFET TM ● Cree Silicon Carbide Power Schottky Diode ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12B2A040ME01-M330L63Y Solar Inverters PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ12NMA027ME-M340F63Y flow MNPC 0-SIC 1200V/ 80mΩ Features flow 0 12mm housing ● Cree Silicon Carbide Power MOSFET ● Cree™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12NMA027ME-M340F63Y PDF

    12 VOLT 2 AMP smps

    Abstract: smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 12 VOLT 10 AMP smps 15 Amp 100 volt mosfet 10 amp diode rectifiers 12 volt 4 amp smps
    Text: Reliability Study SiC ZERO RECOVERY Schottky Diode Reliability at Extremely High Voltage Slew Rates Summary Testing was performed to determine if a failure mechanism was present in the Cree  Silicon Carbide SiC ZERO RECOVERY Schottky diode when operated at extremely high voltage


    Original     		CPWR-RS01, RS904 12 VOLT 2 AMP smps smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 12 VOLT 10 AMP smps 15 Amp 100 volt mosfet 10 amp diode rectifiers 12 volt 4 amp smps PDF

    CCM PFC inductor analysis

    Abstract: PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm
    Text: SiC Schottky Diodes in Power Factor Correction By Stuart Hodge Jr., Senior Member IEEE, Cree Inc., Efficiency gains resulting from the use of highvoltage SiC rectifiers in PFC boost converters can be used to increase power output, increase switching frequency for a smaller design or


    Original     		PCIM-20-CU CCM PFC inductor analysis PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm PDF

    full bridge with IRFP450 schematic

    Abstract: CPWR-AN02 smps fan speed control 4h sic irfp450 mosfet full bridge HFA08TB60 IRFP450 full bridge 100C IRFP450 Cree SiC MOSFET
    Text: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696


    Original     		F33615-00-2-2004 ments/027/313/WhitePaper CPWR-AN02 full bridge with IRFP450 schematic smps fan speed control 4h sic irfp450 mosfet full bridge HFA08TB60 IRFP450 full bridge 100C IRFP450 Cree SiC MOSFET PDF

    full bridge with IRFP450 schematic

    Abstract: irfp450 mosfet full bridge 600 watt smps schematic switching with IRFP450 schematic sic diode 4h sic "silicon carbide" FET 500 WATT smps ixys dsei DSEI 12 06A
    Text: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696


    Original     		F33615-00-2-2004 ments/027/313/WhitePaper full bridge with IRFP450 schematic irfp450 mosfet full bridge 600 watt smps schematic switching with IRFP450 schematic sic diode 4h sic "silicon carbide" FET 500 WATT smps ixys dsei DSEI 12 06A PDF

    Cree SiC MOSFET

    Abstract: No abstract text available
    Text: SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management SiC MOSFET-BASED Power Modules for Solar, UPS and Battery Management Two factors are shaping the development of advanced power conversion systems - increasingly stringent standards for energy efficiency, especially in solar and UPS applications, and the need to decrease the overall system‘s costs for the


    Original     		PDF

    sic mosfet isolated gate driver

    Abstract: TBD0805 CPWR-AN10
    Text: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:


    Original     		CPWR-AN10, sic mosfet isolated gate driver TBD0805 CPWR-AN10 PDF

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D PDF

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET PDF

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


    Original     		CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
    Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CMF10120D-Silicon CMF10120D O-247-3 CMF10120D DMOSFET CMF10120 CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET PDF

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A PDF

    Cree SiC diode die

    Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
    Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering


    Original     		200-V CPWR-AN01, Cree SiC diode die snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet PDF

    ultrafast igbt

    Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
    Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching


    Original     		of169 1200-volt CPWR-AN03, ultrafast igbt IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A PDF

    10KV SiC

    Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
    Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA


    Original     		PDF

    12 VOLT 2 AMP smps circuit

    Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
    Text: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of


    Original     		CPWR-AN05, 12 VOLT 2 AMP smps circuit circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance


    Original     		CPM2-1200-0025B CPM2-1200-0025B PDF

    CAS100H12

    Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
    Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original     		CAS100H12AM1 VDS1200 CAS100H12AM1, CAS100H12 CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source" PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management


    Original     		frequencie-PZ123BA080ME-M909L18Y Jan-14 12-mm com/M90 PDF

    C2M0280120D

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 10 A C2M0280120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 280 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0280120D O-247-3 O-24mplanted C2M0280120D PDF

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		CAS100H12AM1 CAS100H12AM1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0040120D O-247-3 C2M0040mplanted C2M0040120D PDF