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    CREE SIC DIODE DIE Search Results

    CREE SIC DIODE DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS12V65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 12 A, DFN8×8 Visit Toshiba Electronic Devices & Storage Corporation

    CREE SIC DIODE DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2E14

    Abstract: 4h sic
    Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield


    Original     		N00014-02-C-0302, 2E14 4h sic PDF

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D PDF

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


    Original     		CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET PDF

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


    Original     		CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit PDF

    Cree SiC diode die

    Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
    Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering


    Original     		200-V CPWR-AN01, Cree SiC diode die snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet PDF

    12 VOLT 2 AMP smps circuit

    Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
    Text: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of


    Original     		CPWR-AN05, 12 VOLT 2 AMP smps circuit circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v PDF

    irfp450 mosfet full bridge

    Abstract: snubber CIRCUITS mosfet Cree SiC diode die IRFP450 full bridge full bridge with IRFP450 schematic snubber circuit for mosfet FULL WAVE mosfet RECTIFIER CIRCUITS irfp450 mosfet full bridge pwm mosfet 10a 600v 500 watt smps circuit diagram
    Text: APPLICATION NOTE SiC Power Schottky Diodes in Power Factor Correction Circuits By Ranbir Singh and James Richmond Electronic systems operating in the 600-1200 V range currently utilize silicon Si PiN diodes, which tend to store large amounts of minority carrier charge in the


    Original     		PDF

    10KV SiC

    Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
    Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA jim_richmond@cree.com Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA


    Original     		PDF

    AEC-Q101-001

    Abstract: AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 JESD47B JESD22-A104-B
    Text: 1200-V ZERO RECOVERY Rectifiers Qualification Report Summary : March 2008 cation Report 1200-V Qualifi This report documents the qualification and reliability test results for the Cree 1200-V Schottky diode product families. This report also describes the test methods and criteria used the testing process.


    Original     		200-V 100-mm O-220 O-247 AEC-Q101-001 AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 JESD47B JESD22-A104-B PDF

    10KV SiC

    Abstract: No abstract text available
    Text: Fourth Quarter 2004 Volume16, Number 4 ISSN 1054-7231 In This Issue President’s Message. . . . . . . . . . . . . 3 From The Editor . . . . . . . . . . . . . . . . 4 Aachen Meeting Minutes . . . . . . . . . 4 APEC 2005 . . . . . . . . . . . . . . . . . . . 6


    Original     		Volume16, 10-kV, 10KV SiC PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance


    Original     		CPM2-1200-0025B CPM2-1200-0025B PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CPM2-1200-0025B CPM2-1200-0025B PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 60 A CPM2-1200-0040B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Chip Outline High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CPM2-1200-0040B CPM2-1200-0040B PDF

    CPW2-0650-S008B

    Abstract: S008B
    Text: CPW2-0650-S008B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 650 V IF AVG = 8 A Features • • • • • • • Qc Chip Outline = 21 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW2-0650-S008B 650-Volt CPW2-0650-S008B W2-0650-S00 S008B PDF

    chip diode "sawn on foil"

    Abstract: No abstract text available
    Text: CPW2-0650-S010B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 650 V IF AVG = 10 A Features • • • • • • • Qc Chip Outline = 25 nC 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW2-0650-S010B 650-Volt CPW2-0650-S010B W2-0650-S01 chip diode "sawn on foil" PDF

    CPW2-0600

    Abstract: CPW2-0600S010 SILICON CONTROL RECTIFIER
    Text: CPW2-0600S010–Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 600 V IF AVG = 10 A Features • • • • • • • Qc Chip Outline = 28 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW2-0600S010 600-Volt CPW2-0600S010B CPW2-0600 SILICON CONTROL RECTIFIER PDF

    CPW4-1200S010B

    Abstract: Cree SiC diode die diode marking 226
    Text: CPW4-1200S010B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF AVG = 10 A Features • • • • • • • Qc Chip Outline = 66 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW4-1200S010B 1200-Volt CPW4-1200S010B W4-1200S010 CPW4-1200S010 Cree SiC diode die diode marking 226 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPW3-0600S003–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 3 A Features • • • • • • • Qc Chip Outline = 6.7 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW3-0600S003 600-Volt CPW3-0600S003B PDF

    Untitled

    Abstract: No abstract text available
    Text: CPW2-0600S006–Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 600 V IF AVG = 6 A Features • • • • • • • Qc Chip Outline = 17 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW2-0600S006 600-Volt CPW2-0600S006B PDF

    CPWR-0600S001B

    Abstract: No abstract text available
    Text: CPWR-0600S001 – Silicon Carbide Schottky Diode Chip Zero Recovery Rectifier VRRM = 600 V IF AVG = 1 A Features • • • • • • • Qc = 3.3 nC Chip Outline 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPWR-0600S001 600-Volt CPWR-0600S001B CPWR-0600S001 CPWR-0600S001B PDF

    Cree SiC diode die

    Abstract: SiC cree diode die
    Text: CPW4-1200S015B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF = 15 A Features • • • • • • • Qc Chip Outline = 96 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior


    Original     		CPW4-1200S015B 1200-Volt CPW4-1200S015B W4-1200S015 CPW4-1200S015 Cree SiC diode die SiC cree diode die PDF

    Cree SiC diode die

    Abstract: No abstract text available
    Text: CPW3-0600S002–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF AVG = 2 A Features • • • • • • • Qc Chip Outline = 4.8 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW3-0600S002 600-Volt CPW3-0600S002B Cree SiC diode die PDF

    cpw4-1200-s002b

    Abstract: No abstract text available
    Text: CPW4-1200S002B–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF AVG = 2 A Features • • • • • • • Qc Chip Outline = 15 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation


    Original     		CPW4-1200S002B 1200-Volt CPW4-1200S002B CPW4-1200S002 cpw4-1200-s002b PDF