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    CRCW120610R0F Price and Stock

    Vishay Dale CRCW120610R0FKEAHP

    RES SMD 10 OHM 1% 3/4W 1206
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    DigiKey CRCW120610R0FKEAHP Reel 850,000 5,000
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    CRCW120610R0FKEAHP Cut Tape 590 1
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    Vishay Dale CRCW120610R0FKEA

    RES SMD 10 OHM 1% 1/4W 1206
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    DigiKey CRCW120610R0FKEA Reel 258,353 5,000
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    CRCW120610R0FKEA Cut Tape 1
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    CRCW120610R0FKEA Digi-Reel 1
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    Bristol Electronics CRCW120610R0FKEA 4,939
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    Vishay Dale CRCW120610R0FKEAC

    RES 10 OHM 1% 1/4W 1206
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    DigiKey CRCW120610R0FKEAC Reel 85,000 5,000
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    CRCW120610R0FKEAC Cut Tape 2,993 1
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    • 10 $0.045
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    Vishay Dale CRCW120610R0FKEB

    RES SMD 10 OHM 1% 1/4W 1206
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    DigiKey CRCW120610R0FKEB Reel 20,000 10,000
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    CRCW120610R0FKEB Cut Tape 1,420 1
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    • 10 $0.048
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    • 1000 $0.01643
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    Vishay Dale CRCW120610R0FKTA

    RES SMD 10 OHM 1% 1/4W 1206
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    DigiKey CRCW120610R0FKTA Reel 15,000 5,000
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    CRCW120610R0FKTA Cut Tape 2,306 1
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    CRCW120610R0FKTA Digi-Reel 1
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    CRCW120610R0F Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CRCW120610R0F Vishay RES 10R0 SM 1/4W F 1206C THKF 100PPM TR Original PDF
    CRCW120610R0F100 Vishay Thick Film Resistor; Series:CRCW; Resistance:10ohm; Resistance Tolerance:+/- 1 %; Power Rating:0.25W; Voltage Rating:200V; Temperature Coefficient:+/-100 ppm; Package/Case:1206; Leaded Process Compatible:No Original PDF
    CRCW120610R0F100RT1 Vishay RESISTOR, FILM, CHIP (CHIP SIZE 1206) Original PDF
    CRCW120610R0F100RT6 Vishay RES, SMD, 10, .250W, 1% Original PDF
    CRCW120610R0FB02 Vishay RES 10.0 OHMS 1% 1/4W Original PDF
    CRCW120610R0FKEA Vishay Thick Film Chip Resistor; Series:CRCW; Resistance:10ohm; Resistance Tolerance: 1%; Power Rating:0.25W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:200VDC RoHS Compliant: Yes Original PDF
    CRCW120610R0FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FKEAE3 Vishay RES,10.0,1/4W,1%,SMT,1206 Original PDF
    CRCW120610R0FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 3/4W 1206 Original PDF
    CRCW120610R0FKEB Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FKEBC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FKEBHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 3/4W 1206 Original PDF
    CRCW120610R0FKEC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FKECHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 3/4W 1206 Original PDF
    CRCW120610R0FKTA Vishay RESISTOR, 10 OHM, SMD Original PDF
    CRCW120610R0FKTB Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FKTC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 1% 1/4W 1206 Original PDF
    CRCW120610R0FRT1 Vishay RESISTOR,FIXED,FILM,CHIP Original PDF
    CRCW120610R0FRT1E3 Vishay RESIS,10,1%,1/8W,SMT1206 Original PDF
    CRCW120610R0FRT2 Vishay RES 10.0 OHMS 1% 1/4W Original PDF

    CRCW120610R0F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions


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    PDF MIC2169 500kHz MIC2169 MSOP-10 M9999-041205

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    MRF6S19060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930


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    PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060NR1 MRF6S19060N

    CMZ5920B

    Abstract: CMZ5944B CMSH2-60
    Text: User's Guide SNVA154A – March 2006 – Revised May 2013 AN-1455 LM5072 Evaluation Board 1 Introduction The LM5072 evaluation board is designed to provide a low cost, fully IEEE 802.3af compliant Power over Ethernet PoE power supply, capable of operating with both PoE and auxiliary (AUX) power sources. The


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    PDF SNVA154A AN-1455 LM5072 CMZ5920B CMZ5944B CMSH2-60

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


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    PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    Untitled

    Abstract: No abstract text available
    Text: Not for New Designs TFDU6103 www.vishay.com Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 5.5 V Operation FEATURES • Supply voltage 2.4 V to 5.5 V, operating idle current (receive mode) < 3.3 mA, shutdown current < 1 A over full temperature range


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    PDF TFDU6103 TFDU6103 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C4532X7R2A105MT

    Abstract: cmsh3-40l-nsa SUMMATION current transformer LM5000 LM5000-3MTC LM5000-3MTCX LM5000SD-3 LM5000SD-6 LM5000SDX-3 3.1v ZENER DIODE
    Text: LM5000 High Voltage Switch Mode Regulator General Description Features The LM5000 is a monolithic integrated circuit specifically designed and optimized for flyback, boost or forward power converter applications. The internal power switch is rated for a maximum of 80V, with a current limit set to 2A. Protecting


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    PDF LM5000 LM5000 C4532X7R2A105MT cmsh3-40l-nsa SUMMATION current transformer LM5000-3MTC LM5000-3MTCX LM5000SD-3 LM5000SD-6 LM5000SDX-3 3.1v ZENER DIODE

    PTC THERMISTOR TDK

    Abstract: inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206
    Text: AND8470/D A 25 to 55 V, 0.7 to 1.5 A, Single Stage Power Factor Corrected Constant Current Offline LED Driver with Flexible Dimming Options Prepared by: Frank Cathell APPLICATION NOTE ON Semiconductor Introduction energy savings without compromising safety and


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    PDF AND8470/D PTC THERMISTOR TDK inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206

    Untitled

    Abstract: No abstract text available
    Text: TFDU6300 www.vishay.com Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for IrDA Application FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV


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    PDF TFDU6300 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1uF, 50V, AVX Corporation

    Abstract: CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd
    Text: ON Semiconductor Confidential – NDA Required Design Note – DN06056/D Power Supply For Audio Class D Amplifier Device CS51221 Application Input Voltage Output Voltage Output Current Topology Audio 7.6-45 V 18V 8.3A Boost Table 1: CS51221 Audio Power Supply


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    PDF DN06056/D CS51221 CS51221 1uF, 50V, AVX Corporation CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd

    schematic diagram 48V solar charge controller

    Abstract: Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller
    Text: Design Note – DN06054/D Reference Design for Solar Power MPPT Controller Device Application Input Voltage NCP1294 Solar Street Lighting 12-24 V Output Voltage A 13.2V Output Current A Topology 2.0A Table 1: NCP1294 Output Statistics Characteristic Output Voltage


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    PDF DN06054/D NCP1294 NCP1294 schematic diagram 48V solar charge controller Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller

    MIC2169A

    Abstract: si4174dy IRF7821 MSOP-10 SD103BWS Si4800
    Text: MIC2169B 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169B is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in small MSOP-10 and MSOP-10 ePad packages. The MIC2169B allows compact DC/DC solutions with a minimal external


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    PDF MIC2169B 500kHz MIC2169B 500kHz MSOP-10 M9999-041210-B MIC2169A si4174dy IRF7821 SD103BWS Si4800

    MCR50V107M8X11

    Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


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    PDF MRF6V10250HS MRF6V10250HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


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    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


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    PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


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    PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    Untitled

    Abstract: No abstract text available
    Text: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR),


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    PDF TFDU6301 TFDU6301 08-Apr-05

    infrared RC6 protocol philips

    Abstract: No abstract text available
    Text: TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 5.5 V Operation Description The TFDU6103 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication,


    Original
    PDF TFDU6103 TFDU6103 TFDU6103) 08-Apr-05 infrared RC6 protocol philips

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1

    TFDU6301

    Abstract: TFDU6301-TR3 TFDU6301-TT3
    Text: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data


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    PDF TFDU6301 TFDU6301 08-Apr-05 TFDU6301-TR3 TFDU6301-TT3

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100N AD250

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


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    PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N