CQX 13
Abstract: BPW78
Text: TELEFUNKEN Semiconductors CQX 48 GaAs Infrared Emitting Diode in Side View Package Description CQX 48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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BPW78
D-74025
CQX 13
BPW78
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CQX31
Abstract: LIGHT DIODE AI CQX32
Text: CQX 31 • CQX 32 Rot/grün- und rot/gellbleuchtende Lumineszenzdioden GaAsP und GaP Red/green and red/yeliow Light Emitting Diodes (GaAsP and GaP) Anwendung: Zw eifarbige Anzeigen in hochkom m erziellen G eräten Application: Two co lo u r indication in high com m ercial equipm ents
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CQX19
Abstract: 7910E
Text: CQX 19 TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode with Metal Socket Description CQX19 is a high power GaAs infrared emitting diode in a special case, consisting of a solid metal TO–5 header with a molded clear plastic lens. This allows the user to mount the device on a
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CQX19
D-74025
7910E
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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smd transistor nm
Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
Text: VISHAY Vishay Telefunken Y Vishay Telefunken Type Designation Code Detectors U • T • • • 1 Vishay Telefunken T 1 f Series P = Plastic F = Plastic Filter S = Side View M = SMD Y = Fiber Optic Internal Classification Package Varieties 1f Detector 1r
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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CQX 88
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
20-May-99
CQX 88
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CQX48B
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX48B
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX 88
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BPW78
Abstract: CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
08-Apr-05
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
18-Jul-08
CQX 88
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CQX 86
Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U1615
U2-14
U217
u416
CQX 89
CQv 89
512kx8 dram simm
u332
u1515
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5202 GE
Abstract: KA 7502 STS7102 TS7101
Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge
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CQY37N
5202 GE
KA 7502
STS7102
TS7101
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1021 Programmable 8-Bit Silicon Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay c 16 15 : OUT Q/PO c 3 14 S P1 c 4 13 : 12 : P7 11 : 10 C E c • Programmable using 3-wire serial port or 8-bit part llel port P2 c P3 c • Leading and trailing edge accuracy
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DS1021
16-pin
DS1021S
DS1021
DS1021s.
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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U1615
Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
64/1Mb
16Kbytes
168BD5-TR
DM1M72DT6
72-bit
U1615
u1515
U24A
U20-16
U217
U1613
U23C-36
U16-18
U17-16
transistor BMO 123
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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Untitled
Abstract: No abstract text available
Text: paradîgm ' P R E L IM IN A R Y PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:
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PDM34089
680X0
680x0
100-pin
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351N
Abstract: No abstract text available
Text: Paradigm PDM34078 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply
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680X0
PDM34078
100-pin
PDM34078
32Kx32)
351N
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