CPD73
Abstract: No abstract text available
Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)
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CPD73
28-August
CPD73
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CPD73
Abstract: No abstract text available
Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)
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CPD73
22-March
CPD73
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CPD73
Abstract: BRIDGE RECTIFIER BRIDGE-RECTIFIER
Text: Central PROCESS TM Semiconductor Corp. CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC)
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CPD73
CPD73
BRIDGE RECTIFIER
BRIDGE-RECTIFIER
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CPA4
Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Text: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5
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DK86967
DK86967-ISA
DK86967-PCC
CPA4
Jumper JP2e
LEDTX
CPD14
A41 transformer
PCD-15
a4510
CPD11
MCS 96 users manual
CPA17
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PUT marking
Abstract: No abstract text available
Text: Central CMFBR-6F Semiconductor Corp. SURFACE MOUNT SILICON BRIDGE RECTIFIER FEATURES: • Monolithic construction • Fast switching • All diodes share closely matched electrical characteristics. • Very small size DESCRIPTION: The Central Sem iconductor CM FBR-6F is a
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OT-143
C20mA
CPD73)
OT-143
PUT marking
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