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    CP394R

    Abstract: CEDM7004
    Text: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å


    Original     		PDF CP394R CEDM7004 22-March CP394R CEDM7004

    CP394R

    Abstract: CEDM7004
    Text: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å


    Original     		PDF CP394R CEDM7004 25-November 2009S CP394R CEDM7004