CXT3150
Abstract: CP315V CZT3150
Text: PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å
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CP315V
CXT3150
CZT3150
22-March
CXT3150
CP315V
CZT3150
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CP315V
Abstract: CXT3150 CZT3150
Text: PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 40 X 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 X 8.7 MILS Emitter Bonding Pad Area 9.0 X 14 MILS Top Side Metalization Al - 30,000Å
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CP315V
CXT3150
CZT3150
26-August
26-AV
CP315V
CXT3150
CZT3150
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CHIP TRANSISTOR
Abstract: transistor 936 CP315V CXT3150 CZT3150
Text: PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å
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CP315V
CXT3150
CZT3150
CHIP TRANSISTOR
transistor 936
CP315V
CXT3150
CZT3150
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CP588V
Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.
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CPD48
CPD76
CPD78
CPD80
CPD83
CPD88
CPD91
CPD92
CPD96
CP188
CP588V
CPD76
CPD96
CP-392V
CP307
CP188
CP191
CPD48
CPD80
CPD91
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1N456
CPD64
1N456A.
1N457
1N457A.
1N458
BF244 datasheet
2N5133 equivalent
MPS5771
BD345
BD347
BF244
2n5248
bf256
2N3304
2n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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