PDC20269
Abstract: Broadcom switch cli raid fly killer Broadcom cli PDC20268 MPC8220 serial port bluetooth frame stucture Fusion MPT sis900 93C39-1
Text: Freescale Semiconductor Application Note Document Number: AN3252 Rev. 0, 05/2006 MontaVista Linux Professional Edition 3.1 Guide for MPC8220 i by: Ian Cox TSPG/MCD/CIO/Systems & Applications Engineering This application note shows how to perform a typical
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AN3252
MPC8220
PDC20269
Broadcom switch cli
raid fly killer
Broadcom cli
PDC20268
serial port bluetooth frame stucture
Fusion MPT
sis900
93C39-1
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SN74GTL1655
Abstract: SN74GTLPH1655 SN74GTLPH1655DGGR Higgs 3
Text: Application Report SZZA016B - June 2001 Basic Design Considerations for Backplanes Shankar Balasubramaniam, Ramzi Ammar, Ernest Cox, Steve Blozis, and Jose M. Soltero Standard Linear & Logic ABSTRACT This application report describes design issues relevant to the parallel backplanes typically
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SZZA016B
SN74GTL1655
SN74GTLPH1655
SN74GTLPH1655DGGR
Higgs 3
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transmission line theory
Abstract: backplane design GTL16612 GTL16622A GTLP16612 SN74GTL16622A backplane Layout power supply
Text: Backplane Design with GTL+ Shankar Balasubramaniam, Ramzi Ammar, Ernest Cox A demonstration system that depicts the performance of GTL+ IC’s in a backplane is explained in this paper. The paper uses the Texas Instruments GTL16622A as an example in the design of the physical
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GTL16622A
SCEA003,
SN74GTL16622A
SN74GTL
transmission line theory
backplane design
GTL16612
GTLP16612
backplane Layout power supply
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BUZ12
Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
Text: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor
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compon99
BUZ12
SIPMOS application note
depletion MOSFET SPICE
n mosfet depletion note
BUZ12AL
BSP149 equivalent
BUZ MOSFET
kp1022
SIPMOS
BUZ41A
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BSP149 equivalent
Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
Text: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it
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D1876
Abstract: NP100P04PDG NP100P06PDG NP100P06PLG NP36P04KDG 19E-9 m0565 NP50P06KDG NP83P06PDG NP36P06SLG
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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NP36P06SLG
NP36P04KDG
NP36P06KDG
NP50P04KDG
NP50P06KDG
NP83P04PDG
NP83P06PDG
NP100P04PDG
NP100P06PDG
NP100P04PLG
D1876
NP100P04PDG
NP100P06PDG
NP100P06PLG
NP36P04KDG
19E-9
m0565
NP50P06KDG
NP83P06PDG
NP36P06SLG
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VARIABLE RESISTOR FOOTPRINTS
Abstract: Si4850DY VJ0805Y224KXX C4532X7R1H475M C5750X7R2A475M CMSH3-60M LM340 LM3430 Si4850EY VJ0805Y224KXXA
Text: National Semiconductor Application Note 1529 Chris Richardson August 2007 Specifications Of The Board Testing The Converter The Evaluation Board has been designed for testing of various circuits using the LM3430 boost regulator controller. A complete schematic for all the components is shown in Figure
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LM3430
62mil
AN-1529
VARIABLE RESISTOR FOOTPRINTS
Si4850DY
VJ0805Y224KXX
C4532X7R1H475M
C5750X7R2A475M
CMSH3-60M
LM340
Si4850EY
VJ0805Y224KXXA
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VARIABLE RESISTOR FOOTPRINTS
Abstract: C5750X7R2A475M Si4850DY LM5022 C3216X7R1E105K C4532X7R1H475M CMSH2-60M Si4850EY SLF12575T-330M3R2 c5750x
Text: National Semiconductor Application Note 1557 Chris Richardson May 22, 2008 Specifications Of The Board Enabling The Converter The Evaluation Board has been designed for testing of various circuits using the LM5022 boost regulator controller. A complete schematic for all the components is shown in Figure
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LM5022
62mil
AN-1557
VARIABLE RESISTOR FOOTPRINTS
C5750X7R2A475M
Si4850DY
C3216X7R1E105K
C4532X7R1H475M
CMSH2-60M
Si4850EY
SLF12575T-330M3R2
c5750x
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AN1529
Abstract: C5750X7R2A475M C3216X7R1E105K C4532X7R1H475M CMSH3-60M LM3430 Si4850DY Si4850EY VJ0805Y224KXXAT AN-1529
Text: 美国国家半导体公司 应用注释 1529 Chris Richardson 2007年1月 电路板的规格 测试转换器 设计该评估板的目的在于使用LM3430升压稳压控制器来测 图4 所示为效率测量的连接模块图。用于输入和输出的连接
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LM3430
100nFCox
700mA600kHz
24V960
LM3430SO-8
LM343012V24V
LM3430
AN-1529
AN1529
C5750X7R2A475M
C3216X7R1E105K
C4532X7R1H475M
CMSH3-60M
Si4850DY
Si4850EY
VJ0805Y224KXXAT
AN-1529
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VARIABLE RESISTOR FOOTPRINTS
Abstract: C3225X5R1E226M SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A AN-1446 HAT2165H HAT2198R LM3495 MBR0530 RLF12560T-1R0N140 30V variable tracking regulator
Text: National Semiconductor Application Note 1446 Chris Richardson March 2006 Specifications Of The Board Enabling The Converter The Evaluation Board has been designed for testing of various circuits using the LM3495 buck regulator controller. A complete schematic for all the components is shown in
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LM3495
62mil
CSP-9-111S2)
CSP-9-111S2.
AN-1446
VARIABLE RESISTOR FOOTPRINTS
C3225X5R1E226M
SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A
AN-1446
HAT2165H
HAT2198R
MBR0530
RLF12560T-1R0N140
30V variable tracking regulator
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AN-1439
Abstract: AN1439 E911 LMV112 3MHz-30MHz 1439 National Semiconductor an1439 National Semiconductor an-1439 DEUTSCH RE
Text: ெࡔࡔॆӷິࠅ༹ڞ ᆌᆩጀ释 1439 Barry Yuen 20061ሆ ᆅჾ ၎ࢻᆖၚăፕྺᅃ߲ဣཥڦएጚ้ዓLj้ዓ႑ࡽᆌ āāނࢅࣆۉ၍߲ටຕጴዺփںण߳ׯዖඇႎ ك৫ጚඓă৽ᄲ൱ߛೕ୲࿘ۨႠĂگ၎࿋ሯำࢅگ
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LMV112
30MHz
AN-1439
AN201785
EQ30-7
AN-1439
AN1439
E911
LMV112
3MHz-30MHz
1439
National Semiconductor an1439
National Semiconductor an-1439
DEUTSCH RE
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MITSUBISHI IGBT SPICE
Abstract: IGBT 60A spice model n mosfet depletion pspice model parameters igbt 1200v 600a igbt spice Infineon power diffusion process IGBT Pspice TRANSISTOR 1pz igbt spice model bjt 100a
Text: Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer* and J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA kang@sc.edu *Department of Engineering
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C3014
Abstract: 0.6 um cmos process
Text: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C3014
100x100
C3014
C3014-4-98
0.6 um cmos process
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C3014
Abstract: No abstract text available
Text: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C3014
100x100
C3014
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C1004
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN
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C1004
C1004-4-98
C1004
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transistor c1027
Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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C1027
100x1
100x100
C1027-4-98
65x65
transistor c1027
C1027
c1027 transistor
transistor equivalent c1027
C-1027
transistor c1027 equivalent
transistor npn c1027
transistor c1027 equivalents
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c1028
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
65x65
c1028
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C1028
Abstract: c1028 transistor
Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
65x65
C1028
c1028 transistor
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c1027 transistor
Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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C1027
100x1
100x100
65x65
c1027 transistor
transistor c1027
C1027
transistor equivalent c1027
transistor c1027 equivalent
C-1027
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C1004
Abstract: 07UM
Text: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN
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C1004
C1004
07UM
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transistor c1026
Abstract: C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor
Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
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C1026
100x3
65x65
transistor c1026
C1026
C1026 NPN Transistor
equivalent transistor C1026
transistor c1026 equivalent
c1026 transistor
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Untitled
Abstract: No abstract text available
Text: h ÿ 'y y X £ /Transistors UMH6N IMH6A UMH6N/IMH6A 7 < V l/-T 7 Isolated Mini-Mold Device < > / ^ î - ^ K 7 < I ^/Inverter Driver • i'fJfê \liÈ 0/D im ensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t l Ü f ÿ f l l ic 2 m COx v 9 JUS -7 > V IM H 6A
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OCR Scan
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SC-70)
SC-59)
200mW
10Qu20Qu
50m100m
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CQX31
Abstract: LIGHT DIODE AI CQX32
Text: CQX 31 • CQX 32 Rot/grün- und rot/gellbleuchtende Lumineszenzdioden GaAsP und GaP Red/green and red/yeliow Light Emitting Diodes (GaAsP and GaP) Anwendung: Zw eifarbige Anzeigen in hochkom m erziellen G eräten Application: Two co lo u r indication in high com m ercial equipm ents
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SBR6050
Abstract: SBR6040 SBR6045 SBR8035 SBR8050
Text: SBR8035 thru SBR8050 I n ter n a tio n a l S e m ic o n d u c to r , I n c . 85 Amp SCHOTTKY POWER RECTIFIER r Dim A B C D E F G H J K M N I \ ISI Part # - . 42 7 . 1 15 - . 22 0 - Max . 6 87 . 7 93 1.000 . 4 47 . 2 00 . 4 50 . 2 49 . 3 75 Min 17.19 - 10.84
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SBR8035
SBR8050
SBR8035*
SBR6040*
SBR6045*
SBR6050*
ODG37fl
000CH05
SBR6050
SBR6040
SBR6045
SBR8035
SBR8050
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