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    r1lk

    Abstract: GP2S22 100AA
    Text: GP2S22 GP2S22 Subminiature Photointerrupter H Features 1. 44mm compact resin mold type 2. Focal distanse : 0.6mm 3, Visible light cut-off type • Hne Dimensions Unit : mm Internal connection ■ mtions 1. Audio equipment 2. VCRS ,~, D A“~~ 3 Collector


    Original     		PDF GP2S22 r1lk GP2S22 100AA

    AM51A

    Abstract: CXD2548R Laser pickup 11t 36 hard disc motor drive application
    Text: CXD2548R CD Digital Signal Processor with Built-in Digital Servo and DAC For the availability of this product, please contact the sales office. Description The CXD2548R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo,


    Original     		PDF CXD2548R CXD2548R 112PIN LQFP-112P-L01 LQFP112-P-2020 AM51A Laser pickup 11t 36 hard disc motor drive application

    JDV2S01S

    Abstract: TA4205FC 5GHz oscillator
    Text: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are packed in one package; hence, TA4205FC can easily compose a VCO.


    Original     		PDF TA4205FC TA4205FC 25GHz. JDV2S01S 5GHz oscillator

    5GHz oscillator

    Abstract: JDV2S01E TA4205FC 3GHz oscillator VCO
    Text: TA4205FC TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4205FC Use for Voltage Controlled Oscillator VCO . Features • Bias resistors and two transistors for oscillation and buffer are incorporated in one package; therefore the TA4205FC can


    Original     		PDF TA4205FC TA4205FC 25GHz) 5GHz oscillator JDV2S01E 3GHz oscillator VCO

    2N2484

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO


    OCR Scan     		PDF 2N2484 1177b, 45Vdc)

    NPN S2e

    Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
    Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum


    OCR Scan     		PDF T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp

    lc 945 p transistor NPN TO 92

    Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
    Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :


    OCR Scan     		PDF IJ11III lc 945 p transistor NPN TO 92 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR

    3da92

    Abstract: No abstract text available
    Text: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture


    OCR Scan     		PDF GDS3414 33-MHz 27-Gbit/s 3da92

    2SA1492

    Abstract: No abstract text available
    Text: SSE D SANKEN ELECTRIC CO LTP • 7^0741 D0DDT17 163 ■ S A K J Silicon PNP Epitaxial Planar ☆Complement to type 2SC3856 2SA1492 • Outline Drawing 2. -MT-100 T03P Application Example : Audio and General Purpose Electrical Characteristics Symbol


    OCR Scan     		PDF D0DDT17 2SC3856 2SA1492 -MT-100 180mm 20typ T0220) 2SA1492

    Untitled

    Abstract: No abstract text available
    Text: TIP41, TIP41A, 71P41B, TIP41C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK D E C E M B E R 1970 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with the TIP42 Series • 65 W at 25”C Case Temperature •


    OCR Scan     		PDF TIP41, TIP41A, 71P41B, TIP41C TIP42 O-220 TIP41 TIP41A TIP41B

    V8141

    Abstract: No abstract text available
    Text: CLASSIFICATION CHART LT V 4N25 LTV 4N26 C T R 2 0 % Min C T R 2 0 % Min H igh speed LTV 4N27 LT V 4N28 C T R 1 0 % M in C T R 1 0 % M in LTV 4N35 LTV 4N37 C T R 1 0 0 % Min C T R 1 0 0 % M in L T V 4N Series 6 P IN D IP High sensitivity L T V 7 00 Se ries


    OCR Scan     		PDF LTV713F LTV8441 LTV815 LTV825 LTV845 LTV817 LTV827 LTV847 V8141

    t1p41

    Abstract: T1P32C SAL 41B TTP32 T1P-32C TIP328 T1P32 transistor tip31 tip32C samsung T1P32B
    Text: SAMSUNG S EMI C O NDU CT OR INC 14E TIP3T SEKIHhS D I 7^4142 000771t, 1 | TIP31/31A/31B/31C NPN EXITAXIAL SILICO N TRANSISTOR / f MEDIUM POWER LINEAR n SWITCHING APPLICATIONS • Complement to TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF 000771t, TIP31/31 T1P32/32A/32B/32C TIP31 TIP31A TIP31B TIP31C t1p41 T1P32C SAL 41B TTP32 T1P-32C TIP328 T1P32 transistor tip31 tip32C samsung T1P32B

    KSR1102

    Abstract: KSR2102 transistor marking w0
    Text: S A M S U N G SEMICONDUCTOR IN C¡7 3 5 .1 1 1 4 E O KSR1102 | 7^4145 0 0 0 7 0 4 1 5 J| NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, inverter, Interface circuit Driver circuit SOT-23 • Built in bias Resistor (R,=10Kfl, R2=10KQ)


    OCR Scan     		PDF KSR1102 10Kil, KSR2102 soT-23 KSR2102 transistor marking w0

    B0647

    Abstract: B0645 bd649 TAG 064
    Text: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD647, BD649, BD651 DARUNG70NS BD646, BD648, BD650 BD652 O-220 BD645 B0647 B0645 bd649 TAG 064

    TN3000

    Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
    Text: UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8A Transistors I Digital Transistor Duai Digital Transistors for Inverter Driver UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A •Features 1 ) Two DTA114T transistors are housed in a UMT or SMT package.


    OCR Scan     		PDF 120mW DTA114T 96-411-C114T) TN3000 MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SDA 9251X 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM CMOS IC Preliminary Data Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture • One 16 x 4 bit input shift register • Two 16 x 4 bit output shift registers


    OCR Scan     		PDF 9251X P-DSO-28- 33-MHz 27-Gbit/s

    BOW63A

    Abstract: No abstract text available
    Text: BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright 0 1997 Power Innovations Umlted, U • K _ AUGUST 1978 - REVISED MARCH 1997 Designed tor Complementary Use with BDW64, BOW64A, BOW64B, BDW64C and BDW64D • 60 W at 25'C Case Temperature


    OCR Scan     		PDF BDW63, BDW63A, BDW63B, BDW63C, BDW63D BDW64, BOW64A, BOW64B, BDW64C BDW64D BOW63A

    BD2438

    Abstract: B0243 BD243
    Text: BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • Designed lor Complementary Use wtth the BD244 Series • 65 W at 25°C Case Temperature • 6 A Continuous Collector Current • 10 A Peak Collector Current


    OCR Scan     		PDF BD243, BD243A, BD243B, BD243C BD244 T0-220 BD243 BD243A BD2438 B0243

    Untitled

    Abstract: No abstract text available
    Text: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for


    OCR Scan     		PDF BLU86 OT223 bbS333 003SlbT

    BDV64C

    Abstract: BDV64B B0V64B 8DV64B
    Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW


    OCR Scan     		PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B B0V64B 8DV64B