Untitled
Abstract: No abstract text available
Text: Exclusive Technology Feature ISSUE: March 2012 Failure Analysis On Power MOSFETs With Copper Wire Bonds by Huixian Wu, Arthur Chiang, and David Le, Vishay Siliconix, Santa Clara, Calif. Copper wire bonds are being used increasingly in microelectronic components as a less expensive alternative to
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ipc 9704
Abstract: IPC-9702 strain gage test ipc 9702 FR4 1.6mm substrate ansys darveaux CP-01011-1 solder joint IPC9702 strain rosette
Text: MODELING AND EXPERIMENTAL CORRELATION OF BGA SOLDER JOINTS UNDER PCB BENDING Anurag Bansal, Yuan Li, and Vadali Mahadev Altera Corporation 101 Innovation Drive M/S 4101, San Jose, CA 95134, USA abansal@altera.com ABSTRACT This study addresses the effects of varying configurations in
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IPC-9702
ipc 9704
strain gage test
ipc 9702
FR4 1.6mm substrate
ansys darveaux
CP-01011-1
solder joint
IPC9702
strain rosette
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SN62MP100AGS90
Abstract: SN62MP100 SN62 100C copper wirebonded devices
Text: High frequency DC:DC power conversion: The influence of package parasitics Mark Pavier*, Andrew Sawle*, Arthur Woodworth*, Ralph Monteiro*, Jason Chiu*, Carl Blake* * International Rectifier, Holland Road, Hurst Green, Surrey, RH8 9BB, UK * International Rectifier, 233 Kansas St., El Segundo, CA, 90245 USA
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p-473,
SN62MP100AGS90
SN62MP100
SN62
100C
copper wirebonded devices
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Untitled
Abstract: No abstract text available
Text: DirectFET - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England Abstract This paper will present a new power semiconductor
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parallel connection of MOSFETs
Abstract: No abstract text available
Text: DirectFET - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England As Presented at PCIM 2001 Abstract This paper will present a new power semiconductor
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SD57045
Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,
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AN1224
SD57045,
SD57045
CAPACITOR 33PF
AN1224
40w resistor
hf amplifier for transformer
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CAPACITOR 33PF
Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,
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AN1224
SD57045,
CAPACITOR 33PF
SD57045
AN1224
hf amplifier for transformer
40w resistor
1000 watt ferrite transformer
ELECTROLYTIC capacitor, .10uF 50V
30mils
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AN-1126
Abstract: AN-1205 land pattern BGA 0.75 TMCL ACLV MO-151 fbga Substrate design guidelines bga Shipping Trays pcb warpage after reflow Epoxy, glass laminate gold embrittlement
Text: Table of Contents Introduction . 2 Package Overview . 3
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AN-1126
AN-1126
AN-1205
land pattern BGA 0.75
TMCL ACLV
MO-151
fbga Substrate design guidelines
bga Shipping Trays
pcb warpage after reflow
Epoxy, glass laminate
gold embrittlement
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FPD3000P100
Abstract: phemt FPD1500P100
Text: FPD1500P100 1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
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FPD1500P100
FPD1500P100
FPD3000P100
phemt
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FPD3000P100
Abstract: FPD750P100
Text: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
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FPD750P100
FPD750P100
FPD3000P100
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SD57045
Abstract: AN1224
Text: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher
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AN1224
SD57045
SD57045,
AN1224
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BGA 256 PACKAGE power dissipation
Abstract: capacitance in BGA package BGA 256 PACKAGE thermal resistance bga Crack Intel BGA Solder
Text: Technical Notes December 8, 1997 Revision 1.0 THERMAL, ELECTRICAL AND MECHANICAL CONSIDERATIONS IN APPLYING BGA TECHNOLOGY TO A DESIGN ABSTRACT This document briefly discusses the thermal, mechanical and electrical design considerations associated with using ball-grid array components.
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com/design/i960/packdata/2451
BGA 256 PACKAGE power dissipation
capacitance in BGA package
BGA 256 PACKAGE thermal resistance
bga Crack
Intel BGA Solder
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FPD3000P100
Abstract: No abstract text available
Text: FPD3000P100 2W PACKAGED POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
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FPD3000P100
FPD3000P100
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so8 ceramic
Abstract: AN1233 M243 M250 so8 Wire bond
Text: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an
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AN1233
so8 ceramic
AN1233
M243
M250
so8 Wire bond
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LDMOS
Abstract: 65-nm AN1233 M243 M250
Text: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an
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AN1233
LDMOS
65-nm
AN1233
M243
M250
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500a mosfet
Abstract: pavi
Text: Current Handling and Thermal Considerations in a High Current Semiconductor Switch Package Pamela Dugdale and Arthur Woodworth International Rectifier GB Holland Road, Hurst Green Oxted, Surrey RH8 9BB, UK Abstract - This paper presents a discussion of the way in which a
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MOSFET VRM
Abstract: IR140CSP IRF6604 100C IRF6607 back Tunnel diode DirectFet
Text: DirectFETTM Power MOSFET Packaging Technology Enables Discrete Multiphase Converter Design Capable of up to 2MHz/phase Operation Ralph Monteiro, Carl Blake and Jason Chiu International Rectifier 233 Kansas Street, El Segundo, CA 90245 as presented at PCIM China, March 2003
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act30bht
Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation
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ACT30
65kHz
100kHz
ACT30
man50
act30bht
13003 transistor power supply circuits
13003 MOSFET transistor
ACT30BHT-A
ACT30AHT-A
act30aht
flyback 13003
act30bh
act30 application
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CDA 194
Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
Text: Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.
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D2863-77,
CDA 194
jedec mo-142 footprint
jedec ms-024
D2863-77
leadframe C7025
ALJ- 1300
footprint WSON
leadframe Cu C7025
MO-052
MO-108
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act30bht
Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation
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ACT30
65kHz
100kHz
ACT30
act30bht
13003 transistor power supply circuits
ACT30BHT-A
13003 MOSFET transistor
ACT30AHT-A
13002 and 13003 power transistor
act30b
E 13003 TRANSISTOR
npn transistors 400V low power to92
flyback 13003
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D2863-77
Abstract: Plastic Encapsulate Diodes bond wire copper hermetic packages PCB land circuit for wind mill footprint plcc 208 cmos methane SENSOR land pattern PQFP 208
Text: GENERAL INFORMATION Packages INTRODUCTION P lastic surface-mount package designs were developed in the late 1970s in answer to the demand for costeffective solutions to achieving greater board density without sacriÞcing reliability or functionality. Recent developments in these
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1970s
D2863-77
Plastic Encapsulate Diodes
bond wire copper
hermetic packages PCB land
circuit for wind mill
footprint plcc 208
cmos methane SENSOR
land pattern PQFP 208
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C0603C100J5GAC
Abstract: C0603C103K5RAC C0603C221J5GAC SLX-2043
Text: Preliminary Product Description SLX-2043 The Sirenza Microdevices’ SLX-2043 is a low noise amplifier module operating in the 1700 - 2200 MHz frequency band. This device has been optimized to serve high linearity basestation applications where a high intercept point is
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SLX-2043
SLX-2043
EDS-102235
C0603C100J5GAC
C0603C103K5RAC
C0603C221J5GAC
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JEDEC Matrix Tray outlines
Abstract: IspLSI PCMCIA copper bond wire micro semi BGD35
Text: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.
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JESD51,
JEDEC Matrix Tray outlines
IspLSI PCMCIA
copper bond wire micro semi
BGD35
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footprint jedec MS-026 TQFP
Abstract: PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas
Text: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.
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G46-88
footprint jedec MS-026 TQFP
PL84 tube
AS 108-120
x-ray tube datasheet
144 QFP body size
drawing of a geometrical isometric sheet
superior Natural gas engines
x-ray tube datasheet 026
SMT, FPGA FINE PITCH BGA 456 BALL
mo-047 texas
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