BYS 045
Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Text: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max
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NTE7232
Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case
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NTE573â
201ADÂ
com/specs/500to599/pdf/nte573â
NTE639
214AAÂ
NTE7232
NTE2682
NTE2684
NTE7239
pdf/ES-F8DB-14A464-A
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IRF6691
Abstract: IRF6691TR1
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
IRF6691TR1
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Untitled
Abstract: No abstract text available
Text: PD - 95867B IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867B
IRF6691
IRF6691
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IRF6691
Abstract: IRF6691TR1
Text: PD - 95867 IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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IRF6691
IRF6691
IRF6691TR1
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Untitled
Abstract: No abstract text available
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
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IRF6691TR1
Abstract: IRF6691
Text: PD - 95867A IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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5867A
IRF6691
IRF6691
IRF6691TR1
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Untitled
Abstract: No abstract text available
Text: PD - 95867C IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867C
IRF6691
IRF6691
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Untitled
Abstract: No abstract text available
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
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schottky diode application
Abstract: K-088 Die IRF6691 IRF6691TR1
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
schottky diode application
K-088 Die
IRF6691TR1
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STPS5L40
Abstract: STPS5L40RL
Text: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
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STPS5L40
DO-201AD,
DO-201AD
STPS5L40
STPS5L40RL
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STPS5L60
Abstract: STPS5L60RL
Text: STPS5L60 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 60 V Tj (max) 150°C VF (max) 0.53 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
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STPS5L60
DO-201AD,
DO-201AD
STPS5L60
STPS5L60RL
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Untitled
Abstract: No abstract text available
Text: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V
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IRF6794MPbF
IRF6794MTRPbF
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IRF6794MTRPBF
Abstract: IRF6794M
Text: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V
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IRF6794MPbF
IRF6794MTRPbF
IRF6794MTRPBF
IRF6794M
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irf6798MTR1PBF
Abstract: IRF6798MPbF IRF6798MTRPbF
Text: PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V
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97433B
IRF6798MPbF
IRF6798MTRPbF
irf6798MTR1PBF
IRF6798MPbF
IRF6798MTRPbF
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IRF6894
Abstract: IRF6894MTR1PBF
Text: PD - 97633 IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm)
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Untitled
Abstract: No abstract text available
Text: PD - 97770 IRF6892STRPbF IRF6892STR1PbF DirectFET plus MOSFET with Schottky Diode l l l l l l l l l RoHS Compliant and Halogen Free Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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IRF6892STRPbF
IRF6892STR1PbF
AN1035
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60mH inductor
Abstract: IRF6795MTR1PBF IRF6795MTRPBF
Text: PD - 97321 IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V
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IRF6795MPbF
IRF6795MTRPbF
60mH inductor
IRF6795MTR1PBF
IRF6795MTRPBF
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60mH inductor
Abstract: IRF6795MTR1PBF IRF6795MTRPBF
Text: PD - 97321B IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V
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97321B
IRF6795MPbF
IRF6795MTRPbF
60mH inductor
IRF6795MTR1PBF
IRF6795MTRPBF
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1N5822
Abstract: No abstract text available
Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,
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b53T31
00EbT34
N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
1N5822
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DIODE 1N5822
Abstract: marking RAV SOD84A 1N5821 diode schottky 1N5822 n5822 1N58 1N5820 1N5822 diode Philips 370
Text: Philips Semiconductors M bfc.5 3 ^ 3 1 □ □ E b c1 3 L4 • APX Controlled avalanche Schottky barrier d iod es 1N5820ID/21ID/22ID n D E S C R IP T IO N Schottky barrier d io d es in herm etically se a led S O D 8 4 A Implosion D iode ID envelope, intended for use in low output
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
1N5820ID.
DIODE 1N5822
marking RAV
SOD84A
diode schottky 1N5822
n5822
1N58
1N5822 diode
Philips 370
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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Untitled
Abstract: No abstract text available
Text: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max
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57/58-E
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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