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    CONTROLLED AVALANCHE RECTIFIER DIODES FR 27 Search Results

    CONTROLLED AVALANCHE RECTIFIER DIODES FR 27 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CONTROLLED AVALANCHE RECTIFIER DIODES FR 27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR BC 187

    Abstract: AN569 MTDF1P02HD SMD310 TRANSISTOR BC 545
    Text: MOTOROLA Order this document by MTDF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs


    Original     		PDF MTDF1P02HD/D MTDF1P02HD TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310 TRANSISTOR BC 545

    AN569

    Abstract: MTDF1N03HD MTDF1N03HDR2 SMD310
    Text: MTDF1N03HD Preferred Device Power MOSFET 1 Amp, 30 Volts N–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTDF1N03HD r14525 MTDF1N03HD/D AN569 MTDF1N03HD MTDF1N03HDR2 SMD310

    MTDF1P02HDR2

    Abstract: TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310
    Text: MTDF1P02HD Preferred Device Power MOSFET 1 Amp, 20 Volts P–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTDF1P02HD r14525 MTDF1P02HD/D MTDF1P02HDR2 TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310

    mosfet transistor 800 volts.200 amperes

    Abstract: No abstract text available
    Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF2P03HD r14525 MTSF2P03HD/D mosfet transistor 800 volts.200 amperes

    MTSF2P03HD

    Abstract: AN569 MTSF2P03HDR2 SMD310
    Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF2P03HD r14525 MTSF2P03HD/D MTSF2P03HD AN569 MTSF2P03HDR2 SMD310

    AN569

    Abstract: MTSF3N03HD MTSF3N03HDR2 SMD310 DEVICE MARKING aa
    Text: MOTOROLA Order this document by MTSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTSF3N03HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs


    Original     		PDF MTSF3N03HD/D MTSF3N03HD AN569 MTSF3N03HD MTSF3N03HDR2 SMD310 DEVICE MARKING aa

    AN569

    Abstract: MTSF3N03HD MTSF3N03HDR2 SMD310
    Text: MTSF3N03HD Preferred Device Power MOSFET 3 Amps, 30 Volts N–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF3N03HD r14525 MTSF3N03HD/D AN569 MTSF3N03HD MTSF3N03HDR2 SMD310

    Untitled

    Abstract: No abstract text available
    Text: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTDF1C02HD MTDF1C02HD/D

    Untitled

    Abstract: No abstract text available
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 r14525 MBRB1045/D

    AN569

    Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
    Text: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTDF1C02HD r14525 MTDF1C02HD/D AN569 MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf

    AN569

    Abstract: MTDF1C02HD SMD310
    Text: MOTOROLA Order this document by MTDF1C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs


    Original     		PDF MTDF1C02HD/D MTDF1C02HD AN569 MTDF1C02HD SMD310

    SMD310

    Abstract: AN569 MTDF2N06HD MTDF2N06HDR2
    Text: MTDF2N06HD Preferred Device Power MOSFET 2 Amps, 60 Volts N–Channel Micro8t, Dual Micro8 devices are an advanced series of Power MOSFETs that contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These


    Original     		PDF MTDF2N06HD r14525 MTDF2N06HD/D SMD310 AN569 MTDF2N06HD MTDF2N06HDR2

    Untitled

    Abstract: No abstract text available
    Text: MTDF1N02HD Preferred Device Power MOSFET 1 Amp, 20 Volts N−Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTDF1N02HD MTDF1N02HD/D

    d3n04h

    Abstract: AN569 MMDF3N04HD MMDF3N04HDR2
    Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode


    Original     		PDF MMDF3N04HD r14525 MMDF3N04HD/D d3n04h AN569 MMDF3N04HD MMDF3N04HDR2

    AN569

    Abstract: MTDF1N02HD MTDF1N02HDR2 SMD310
    Text: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs


    Original     		PDF MTDF1N02HD/D MTDF1N02HD AN569 MTDF1N02HD MTDF1N02HDR2 SMD310

    AB Electronic

    Abstract: No abstract text available
    Text: MTSF1P02HD Preferred Device Advance Information Power MOSFET 1 Amp, 20 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed


    Original     		PDF MTSF1P02HD r14525 MTSF1P02HD/D AB Electronic

    Diode BYW 56

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­


    OCR Scan     		PDF bbS3T31 002bb77 BYW54 7Z88032 Diode BYW 56

    BY627

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bRE » • b b S a ' m DDEbSIS b^l I IAPX BY627 M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diode in hermetically sealed axial-leaded ID * envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits as well as general pur­


    OCR Scan     		PDF BY627 OD-84. BY627

    Untitled

    Abstract: No abstract text available
    Text: ^ 3 ffgyair* OSB 9415 SERIES OSM9415 SERIES , OSS 9415 SERIES ^53=131 DDESIOS 5 • MAINTENANCE TYPE N AF1ER PHILIPS/DISCRETE 2SE D HIGH-VOLTAGE RECTIFIER STACKS T -22-07 Ranges of high-voltage rectifier assemblies, incorporating controlled avalanche diodes mounted on


    OCR Scan     		PDF OSM9415 OSB9415 OSIVI9415 OSS9415 32UNC) OSM9415

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


    OCR Scan     		PDF LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31

    IEC60-2

    Abstract: No abstract text available
    Text: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can


    OCR Scan     		PDF

    PF6HZ

    Abstract: P8HZ P6HZ PL10HZ R10HZR P10HZ F62Z P4HZR PL6HZ
    Text: DIODES DE REDRESSEMENT A AVALANCHE CONTROLEE controlled avalanche rectifier diodes Vrw M TYPES ^ V RA @ I r = 1 0 0 jiA V VRRM Vo (V) 1A c my my mxy n PL PL PL PL / 4 HZ 6 HZ 8 HZ 10 HZ 2A 1N 1N 1N 1N IN o 3938 3939 3940 3941 3942 my my F 42 Z F 62 Z F 82 Z


    OCR Scan     		PDF 100jia 10/lsJT r10hz, PF6HZ P8HZ P6HZ PL10HZ R10HZR P10HZ F62Z P4HZR PL6HZ

    Mullard Mullard quick reference guide

    Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
    Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)


    OCR Scan     		PDF BZX91 1N825 1N827 1N829 1N914 1N916 1N4001G, CV7367 1N4002G, CV7756 Mullard Mullard quick reference guide CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier

    STR-F6514

    Abstract: STR-F6654 EQUIVALENT schematic diagram power supply str f6654 STR-F6524 STRF6523 STR-F6656 EQUIVALENT STR-F6523 schematic diagram power supply str f6656 STR-F6656 STR-F6654
    Text: Preliminary Product Specification - 12th September, 1997. STR-F6600 Series ««* * / f l l •i• ■i rr i m_ ri -«««*■- _ M icrosystems E urope Ltd. c — u > n n f \ ie n SNIPS PRIMARY 1C. Advantages i i > ■ Gmtìtj Redated P arts Count A nd »dw Rated MOSFET


    OCR Scan     		PDF STR-F6600 STR-F6632 STR-F6652 STR-F6653 STR-F6523] STR-F6654 STR-F6524] STR-F6656 STR-F6672 STR-F6514 STR-F6654 EQUIVALENT schematic diagram power supply str f6654 STR-F6524 STRF6523 STR-F6656 EQUIVALENT STR-F6523 schematic diagram power supply str f6656