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    CONT BASE 28 Search Results

    CONT BASE 28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    CONT BASE 28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13.56Mhz rf amplifier module

    Abstract: tiris rfid TA31275EVKIT-315 2.4GHz RECEIVER IC tag RFID 134.2khz antenna design ti 13.56mhz loop antenna antenna 13.56MHz transponder amplifier TA31275EVKIT-433 TRF7960 evm RFID LF
    Text: Readers/Modules Cont. NEW! TRF7960 Evaluation Module LF Base Station IC The TRF7960 evaluation module (EVM) helps designers evaluate the performance of the TRF7960 multiple protocol RFID transceiver. The device incorporates an analog front end, protocol handling, framing,


    Original     		PDF TRF7960 TRF7960 all51 10-MSOP ZNBG2000X10CT-ND ZNBG2000X10TR-ND 16-QSOP ZNBG4000Q16CT-ND ZNBG4000Q16TR-ND 13.56Mhz rf amplifier module tiris rfid TA31275EVKIT-315 2.4GHz RECEIVER IC tag RFID 134.2khz antenna design ti 13.56mhz loop antenna antenna 13.56MHz transponder amplifier TA31275EVKIT-433 TRF7960 evm RFID LF

    415 Series

    Abstract: No abstract text available
    Text: 415 Series - Screw Terminal SPDT, DPDT, 15 Amps LISTED 225G IND. CONT. EQ. The 415 series is a compact, 15 Amp base mounted industrial relay. It is a versatile relay that offers a variety of contact configurations and options. Excellent contact life assures long mechanical life and


    Original     		PDF 240VAC 28VDC 120VAC -120VAC 415 Series

    HITACHI DP-28

    Abstract: Hitachi DSAUTAZ005
    Text: HN58C256A Series, HN58C257A Series Package Dimensions HN58C256AP Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ


    Original     		PDF HN58C256A HN58C257A HN58C256AP DP-28) DP-28 HN58C256AFP FP-28D) TFP-28DB HITACHI DP-28 Hitachi DSAUTAZ005

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HN58V256A Series, HN58V257A Series Package Dimensions HN58V256AFP Series FP-28D Unit: mm 18.3 18.8 Max 15 14 1.12 Max 0.17 ± 0.05 0.15 ± 0.04 1 2.50 Max 8.4 28 11.8 ± 0.3 1.7 1.27 0.15 0.40 ± 0.08 0.38 ± 0.06 0.20 M Dimension including the plating thickness


    Original     		PDF HN58V256A HN58V257A HN58V256AFP FP-28D) FP-28D HN58V256AT TFP-28DB) Dimension10 Hitachi DSAUTAZ005

    transistor fn 1016

    Abstract: transistor r1010 dYNAMIC mIC pre amp ICs FN 1016 mic preamplifier mic PRE-AMPLIFIER ZL300 600 r34 mic amplifier preamplifier st
    Text: ICs for Telephone AN6175K Hands-free Speech Network IC AN6175K 0.9±0.25 0.5±0.1 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 0.96±0.25 13.7±0.3 4.76±0.25 3.3±0.25 +0.1 5 0.0 3 ~ 15° • Features Unit : mm 1 2 3 4 5 6 7 8 9 10 11


    Original     		PDF AN6175K AN6175K transistor fn 1016 transistor r1010 dYNAMIC mIC pre amp ICs FN 1016 mic preamplifier mic PRE-AMPLIFIER ZL300 600 r34 mic amplifier preamplifier st

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code


    Original     		PDF HN58V65A HN58V66A HN58V65AP HN58V66AP DP-28) DP-28 SC-510-28E HN58V65AFP Hitachi DSAUTAZ005

    HN58V65-SR

    Abstract: HITACHI DP-28 Hitachi DSAUTAZ005
    Text: HN58V65AI, HN58V66AI, HN58V65-SR, HN58V66A-SR Series Package Dimensions HN58V65API Series HN58V66API Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05


    Original     		PDF HN58V65AI, HN58V66AI, HN58V65-SR, HN58V66A-SR HN58V65API HN58V66API DP-28) DP-28 HN58V65-SR HITACHI DP-28 Hitachi DSAUTAZ005

    transistor fn 1016

    Abstract: Fn 1016 SPO2 spo2 features AN6175K spo2 specifications HF receiver circuit CCITT FILTER mic PRE-AMPLIFIER transistor r1010
    Text: ICs for Telephone AN6175K Hands-free Speech Network IC AN6175K 0.9±0.25 0.5±0.1 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 0.96±0.25 13.7±0.3 4.76±0.25 3.3±0.25 +0.1 5 0.0 3 ~ 15° • Features Unit : mm 1 2 3 4 5 6 7 8 9 10 11


    Original     		PDF AN6175K AN6175K transistor fn 1016 Fn 1016 SPO2 spo2 features spo2 specifications HF receiver circuit CCITT FILTER mic PRE-AMPLIFIER transistor r1010

    Untitled

    Abstract: No abstract text available
    Text: D D3PAK G APT5020SN S 500V 28.0A 0.20Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5020SN UNIT 500 Volts 28 Continuous Drain Current @ TC = 25°C


    Original     		PDF APT5020SN APT5020SN

    APT8028JVR

    Abstract: No abstract text available
    Text: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8028JVR OT-227 E145592 APT8028JVR

    Untitled

    Abstract: No abstract text available
    Text: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8028JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT8028JVR 28A 0.280Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8028JVR OT-227 E145592

    BUF600

    Abstract: OPA621 OPA623 SHC615 SHC615AP SHC615AU operational transconductance amplifier
    Text: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA


    Original     		PDF SHC615 750MHz 280MHz 100dB SHC615 OPA621 BUF600 OPA621 OPA623 SHC615AP SHC615AU operational transconductance amplifier

    transistor ecg36

    Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo


    OCR Scan     		PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180

    fzt458

    Abstract: No abstract text available
    Text: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658


    OCR Scan     		PDF OT223 2814-Collector, FZT658 FZT458 BSP19 FZT657 BFN38 FZTA42 BFN36 BSP20

    NTE1546

    Abstract: NTE1553 346 LED 1a 103
    Text: 1U-3* SEE DIAG 419 VIDEO CHROMA, DEMOD, HORIZ, VERT OSC DR, Vco=12V i 42-LEAD DIP, SEE DIAG 335 '• NTE1547 HYBRID TV VOLTAGE REV NTE1546 BASE U - _ INPUT CASE Color Ctrl— E-Cont Out— Vcc (12V)— Delay I n Contrast C tr lVideo Inv I n Video Inv Out—


    OCR Scan     		PDF NTE1546 42-LEAD NTE1547 NTE1553 NTE1546 NTE1553 346 LED 1a 103

    ECG283

    Abstract: ECG263 ECG261 ECG270 darlington pair transistor ECG287 ECG264 ECG288 ECG268 ECG269
    Text: Transistors COnt#d C o lle c to r T o E m itte r V o lts C o lle c to r T o Base V o lts D e s c rip tio n a n d A p p lic a tio n ECG Typ e (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) BVc b o ECG260 bv Ceo Base to E m itte r V o lts B V EBO M a x.


    OCR Scan     		PDF ECG260 ECG239> ro-127 ECG261 ECG262) r0-220 ECG262 ECG261 O-220 ECG263 ECG283 ECG270 darlington pair transistor ECG287 ECG264 ECG288 ECG268 ECG269

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5020HJN E145592 S020HJN OT-227

    APT5020

    Abstract: APT5020JN APT5020JN APT
    Text: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE


    OCR Scan     		PDF APT5020JN APT5022JN E145592 5020JN 5022JN OT-227 APT5020 APT5020JN APT

    APT5020HJN

    Abstract: svi 2003 LM 238 Y DIODE H4B apt5020h 5020HJN
    Text: ADVANCED POLI ER TECHNOLOGY b3E i S/D ö S • □ E 5 7 cï G ci DDOUCm » A V P A d va n ced Pow er T e c h n o lo g y 9 OD .J g j: olJS: ]> APT5020HJN ISOTOP* 500V 28.0A 0.20Q ^ 3 ^ "UL Recognized" File No. E145592 S POW ER MOS IV HALF-BRIDGE ISOTOP PACKAGE


    OCR Scan     		PDF DD01104 APT5020HJN E145592 5020HJN OT-227 svi 2003 LM 238 Y DIODE H4B apt5020h

    apts020

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 O D APT5020SN O S 500V 28.0A 0.20Q H f WER MOS IV1 1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    OCR Scan     		PDF APT5020SN APTS020SN apts020

    714HC

    Abstract: 1ER2 APT5020SN
    Text: O D O s A d va n ced P o w er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Í2 POWER MOS IVe N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All R atinns: 1 Parameter Drain-Source Voltage in locc n th cm rica cnA^ifia.


    OCR Scan     		PDF APT5020SN 0001MÃ 714HC 1ER2

    Untitled

    Abstract: No abstract text available
    Text: O D Ô S ADVANCED P ow er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Ü POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    OCR Scan     		PDF APT5020SN

    vns0a

    Abstract: No abstract text available
    Text: SHC615 B U R R -B R O W N I b b M AVAILABLE IN DIE FORM Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • BROADCAST/HDTV EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3^iA


    OCR Scan     		PDF SHC615 750MHz 280MHz 100dB SHC615 pre23 5M-1982. vns0a