Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

Hitachi DSAUTAZ005

Contextual Info: HN58V256A Series, HN58V257A Series Package Dimensions HN58V256AFP Series FP-28D Unit: mm 18.3 18.8 Max 15 14 1.12 Max 0.17 ± 0.05 0.15 ± 0.04 1 2.50 Max 8.4 28 11.8 ± 0.3 1.7 1.27 0.15 0.40 ± 0.08 0.38 ± 0.06 0.20 M Dimension including the plating thickness

HN58V256A

Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA0047
Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by

HN58C256FPI-20

Contextual Info: HN58V256A Series HN5SV257A Series Preliminary 3 2 7 6 8 -w o rd x 8 -b it E le c tric a lly E ra sa b le and P ro g ra m m a b le CM OS ROM HITACHI The Hitachi HN58V256A and HN58V257A are a e le c tric a lly e ra sa b le and pro g ram m ab le EEPR O M ’s organized, as 32768-w ord x 8-bit.

HN58V256A

Abstract: HN58V256AFP-12 HN58V256AFP-12E HN58V256AT-12 HN58V256AT-12E HN58V257A HN58V257AT-12 HN58V257AT-12E
Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) REJ03C0147-0500Z (Previous ADE-203-357D (Z) Rev.4.0) Rev. 5.00 Nov. 17. 2003 Description Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organize as 32768-word x 8-bit. They have realized high speed, low power consumption and high reliability by

Hitachi DSA00171

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357C Z Rev. 3.0 May. 20, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by

Hitachi DSA002750

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by

HN58V257AT-15

Contextual Info: ADE-203-357A Z HN58V256A / HN58V257A Series 32,768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable EEPROM s organized as 32,768-word x 8-bit and employing

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM 's organized as 32768-w ord x 8-bit, Em ploying advanced MNOS memory technology and CMOS

Hitachi DSAUTAZ006

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by

Contextual Info: HN58V256A Series, HN58V257A Series Ordering Information Type No. Access time Package HN58V256AFP-12 120 ns 400 mil 28-pin plastic SOP FP-28D HN58V256AT-12 120 ns 28-pin plastic TSOP (TFP-28DB) HN58V257AT-12 120 ns 8 x 14 mm2 32-pin plastic TSOP (TFP-32DA)

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) REJ03C0147-0500Z (Previous ADE-203-357D (Z) Rev.4.0) Rev. 5.00 Nov. 17. 2003 Description Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word X 8-bit. Employing advanced MNOS memory technology and CMOS

Renesas mnos

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) REJ03C0147-0500Z (Previous ADE-203-357D (Z) Rev.4.0) Rev. 5.00 Nov. 17. 2003 Description Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

gate drive protetion with transistor

Abstract: HN58V256A HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit. Employing advanced MNOS memory technology and CMOS process and

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

HN58V256A

Abstract: HN58V256AT HN58V257A
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The H itachi H N 58V 256A and H N 58 V 2 5 7 A are a electrically erasable and p rogram m able E E P R O M ’s

HN58V256A

Abstract: HN58V257A
Contextual Info: HN58V256A Series, HN58V257A Series Pin Description Pin name Function A0 to A14 Address input I/O0 to I/O7 Data input/output OE Output enable CE Chip enable WE Write enable VCC Power supply VSS Ground RDY/Busy* RES* 1 1 Reset NC Note: Ready busy No connection

HN58V256A

Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA00777
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with